Vishay Siliconix SI3459BDV-T1-GE3

Name: SI3459BDV-T1-GE3
Brand: Vishay Siliconix
SKU: 2480680-SI3459BDV-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI3459BDV-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2480680-SI3459BDV-T1-GE3

Description:: MOSFET P-CH 60V 2.9A 6-TSOP

ECAD Model:

Datasheet:: SI3459BDV-T1-GE3

Specifications

Vishay Siliconix SI3459BDV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3459BDV-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
19.986414mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Resistance
216MOhm
Terminal Finish
PURE MATTE TIN
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
2W Ta 3.3W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2W
Turn On Delay Time
5 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
216m Ω @ 2.2A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
350pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.9A Tc
Gate Charge (Qg) (Max) @ Vgs
12nC @ 10V
Rise Time
12ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
18 ns
Continuous Drain Current (ID)
-2.2A
Threshold Voltage
-3V
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
0.0022A
Nominal Vgs
-3 V
Feedback Cap-Max (Crss)
30 pF
Height
1mm
Length
3.05mm
Width
1.65mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI3459BDV-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 350pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of -2.2A.0.0022A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 18 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-3V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI3459BDV-T1-GE3 Features
a continuous drain current (ID) of -2.2A
the turn-off delay time is 18 ns
a threshold voltage of -3V
a 60V drain to source voltage (Vdss)

SI3459BDV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3459BDV-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI3459BDV-T1-GE3 More Descriptions

P-CH MOSFET TSOP-6 60V 180MOHM @ 10V - LEAD(PB) AND HALOGEN FREE
MOSFET, P-CH, -60V, -2.9A, TSOP; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.9A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -3V; P
Small Signal Field-Effect Transistor, 2.9A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA

Product Comparison

The three parts on the right have similar specifications to SI3459BDV-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Nominal Vgs

Feedback Cap-Max (Crss)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Additional Feature

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

View Compare
SI3459BDV-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

19.986414mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

6

EAR99

216MOhm

PURE MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

1

2W Ta 3.3W Tc

Single

ENHANCEMENT MODE

2W

5 ns

P-Channel

SWITCHING

216m Ω @ 2.2A, 10V

3V @ 250μA

350pF @ 30V

2.9A Tc

12nC @ 10V

12ns

60V

4.5V 10V

±20V

10 ns

18 ns

-2.2A

-3V

20V

0.0022A

-3 V

30 pF

1mm

3.05mm

1.65mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-
SI3447BDV-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

-

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

40

6

1

-

1.1W Ta

Single

ENHANCEMENT MODE

1.1W

20 ns

P-Channel

SWITCHING

40m Ω @ 6A, 4.5V

1V @ 250μA

-

4.5A Ta

14nC @ 4.5V

46ns

-

1.8V 4.5V

±8V

62 ns

62 ns

-4.5A

1V

8V

-

1 V

-

-

-

-

Unknown

No

ROHS3 Compliant

-

2015

ULTRA-LOW RESISTANCE

0.04Ohm

12V

SI3459BDV-T1-GE3 vs SI3447BDV-T1-GE3
SI3469DV-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

19.986414mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

6

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

1

1.14W Ta

Single

ENHANCEMENT MODE

1.14W

10 ns

P-Channel

SWITCHING

30m Ω @ 6.7A, 10V

3V @ 250μA

-

5A Ta

30nC @ 10V

12ns

-

4.5V 10V

±20V

35 ns

50 ns

-6.7A

-1V

20V

5A

-1 V

-

-

-

-

Unknown

No

ROHS3 Compliant

-

2016

-

0.03Ohm

-20V

SI3459BDV-T1-GE3 vs SI3469DV-T1-GE3
SI3454CDV-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

-

PURE MATTE TIN

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

-

1.25W Ta 1.5W Tc

Single

ENHANCEMENT MODE

1.25W

-

N-Channel

SWITCHING

50m Ω @ 3.8A, 10V

3V @ 250μA

305pF @ 15V

4.2A Tc

10.6nC @ 10V

-

-

4.5V 10V

±20V

-

-

3.8A

-

20V

4.2A

-

-

-

-

-

-

No

ROHS3 Compliant

-

2013

-

0.05Ohm

30V

SI3459BDV-T1-GE3 vs SI3454CDV-T1-GE3

Certification

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SI3459BDV-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI3459BDV-T1-GE3 DISTI #V72:2272_07432605	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant	55	1 $0.7621 10 $0.6633 25 $0.5427
SI3459BDV-T1-GE3 DISTI #V36:1790_07432605	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant	0	3000 $0.2863
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 2.9A 6-TSOP RoHS: Compliant	35445	1 $0.7 10 $0.615 100 $0.4712 500 $0.37248 1000 $0.29798
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 2.9A 6-TSOP RoHS: Compliant	35445	1 $0.7 10 $0.615 100 $0.4712 500 $0.37248 1000 $0.29798
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 2.9A 6-TSOP RoHS: Compliant	33000	3000 $0.26217 6000 $0.24409 15000 $0.23505 30000 $0.22903
SI3459BDV-T1-GE3 DISTI #33591883	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant	3000	3000 $0.1688
SI3459BDV-T1-GE3 DISTI #26942294	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R RoHS: Compliant	55	24 $0.7621
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI RoHS: Compliant	12000	3000 $0.28353 6000 $0.23146 9000 $0.19223 15000 $0.16678 30000 $0.15536 75000 $0.15122 150000 $0.14729
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R (Alt: SI RoHS: Compliant	0	3000 $0.3069 6000 $0.2089 12000 $0.1799 18000 $0.1659 30000 $0.1549
SI3459BDV-T1-GE3 DISTI #SI3459BDV-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 2.2A 6-Pin TSOP T/R - Tape a RoHS: Not Compliant	0	3000 $0.3049 6000 $0.2959 12000 $0.2839 18000 $0.2759 30000 $0.2689
SI3459BDV-T1-GE3 DISTI #15R4948	Vishay Intertechnologies	P CHANNEL MOSFET, FULL REEL, Transistor Polarity:	0	1 $0.362 5000 $0.353 10000 $0.326 20000 $0.305 30000 $0.284 50000 $0.271
SI3459BDV-T1-GE3 DISTI #84R8040	Vishay Intertechnologies	P CH MOSFET, Transistor Polarity:P Channel, Cont	0	1 $0.838 25 $0.677 50 $0.595 100 $0.514 250 $0.469 500 $0.424 1000 $0.339
SI3459BDV-T1-GE3. DISTI #96AC3676	Vishay Intertechnologies	P-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO	3000	1 $0.362 5000 $0.353 10000 $0.326 20000 $0.305 30000 $0.284 50000 $0.271
SI3459BDV-T1-GE3 DISTI #70026448	Vishay Siliconix	MOSFET, P-Ch, Vds -60V, Vgs /- 20V, Rds(on) 0 RoHS: Compliant	0	3000 $0.337
SI3459BDV-T1-GE3 DISTI #	Vishay Intertechnologies	SI3457BDV Series 30 V 0.216 Ohm 12 nC P-Channel Su RoHS: Compliant	3000	3000 $0.26
SI3459BDV-T1-GE3 DISTI #781-SI3459BDV-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs TSOP-6 RoHS: Compliant	15221	1 $0.83 10 $0.67 100 $0.509 500 $0.42 1000 $0.336 3000 $0.305
SI3459BDV-T1-GE3 DISTI #	Vishay Intertechnologies		1602
SI3459BDV-T1-GE3 DISTI #2679686	Vishay Intertechnologies	MOSFET, P-CH, -60V, -2.9A, TSOP	0	3000 $0.215 9000 $0.211
SI3459BDV-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs TSOP-6 RoHS: Compliant	3000	3000 $0.291 6000 $0.279 12000 $0.273 18000 $0.264
SI3459BDV-T1-GE3 DISTI #2646376	Vishay Intertechnologies	MOSFET, P-CH, -60V, -2.9A, TSOP RoHS: Compliant	0	1 $1.05 10 $0.927 100 $0.711 500 $0.562 1000 $0.45
SI3459BDV-T1-GE3 DISTI #2679686	Vishay Intertechnologies	MOSFET, P-CH, -60V, -2.9A, TSOP RoHS: Compliant	0	3000 $0.416
SI3459BDV-T1-GE3 DISTI #XSFP00000077613	Vishay Siliconix	RoHS: Compliant	6000	3000 $0.3714 6000 $0.3467

SI3459B~~(4)~~
SI3459~~(8)~~
SI345~~(104)~~
SI34~~(149)~~
SI3~~(85)~~

Vishay Siliconix SI3459BDV-T1-GE3

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