SI3456DDV-T1-E3

Vishay Siliconix SI3456DDV-T1-E3

Part Number:
SI3456DDV-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2850222-SI3456DDV-T1-E3
Description:
MOSFET N-CH 30V 6.3A 6TSOP
ECAD Model:
Datasheet:
SI3456DDV-T1-E3

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Specifications
Vishay Siliconix SI3456DDV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3456DDV-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    SOT-23-6 Thin, TSOT-23-6
  • Number of Pins
    6
  • Weight
    19.986414mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2016
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    40mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    6
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1.7W Ta 2.7W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.7W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    40m Ω @ 5A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    325pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    6.3A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    9nC @ 10V
  • Rise Time
    13ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    13 ns
  • Turn-Off Delay Time
    16 ns
  • Continuous Drain Current (ID)
    5A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    5A
  • DS Breakdown Voltage-Min
    30V
  • Height
    1mm
  • Length
    3.05mm
  • Width
    1.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI3456DDV-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 325pF @ 15V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 16 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).

SI3456DDV-T1-E3 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 16 ns
a 30V drain to source voltage (Vdss)


SI3456DDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3456DDV-T1-E3 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3456DDV-T1-E3 More Descriptions
Single N-Channel 30 V 0.04 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOP T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:6Pinsrohs Compliant: No
Product Comparison
The three parts on the right have similar specifications to SI3456DDV-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    DS Breakdown Voltage-Min
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Drain to Source Breakdown Voltage
    Threshold Voltage
    Drain-source On Resistance-Max
    Nominal Vgs
    REACH SVHC
    Supplier Device Package
    Termination
    Max Operating Temperature
    Min Operating Temperature
    Dual Supply Voltage
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI3456DDV-T1-E3
    SI3456DDV-T1-E3
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    40mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    1.7W Ta 2.7W Tc
    Single
    ENHANCEMENT MODE
    1.7W
    12 ns
    N-Channel
    SWITCHING
    40m Ω @ 5A, 10V
    3V @ 250μA
    325pF @ 15V
    6.3A Tc
    9nC @ 10V
    13ns
    30V
    4.5V 10V
    ±20V
    13 ns
    16 ns
    5A
    20V
    5A
    30V
    1mm
    3.05mm
    1.65mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3424BDV-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    28MOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    2.1W Ta 2.98W Tc
    Single
    ENHANCEMENT MODE
    -
    18 ns
    N-Channel
    SWITCHING
    28m Ω @ 7A, 10V
    3V @ 250μA
    735pF @ 15V
    8A Tc
    19.6nC @ 10V
    85ns
    -
    4.5V 10V
    ±20V
    12 ns
    17 ns
    7A
    20V
    7A
    -
    1mm
    3.05mm
    1.65mm
    No
    ROHS3 Compliant
    Lead Free
    30V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3469DV-T1-GE3
    14 Weeks
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    19.986414mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    Matte Tin (Sn)
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    6
    1
    1
    1.14W Ta
    Single
    ENHANCEMENT MODE
    1.14W
    10 ns
    P-Channel
    SWITCHING
    30m Ω @ 6.7A, 10V
    3V @ 250μA
    -
    5A Ta
    30nC @ 10V
    12ns
    -
    4.5V 10V
    ±20V
    35 ns
    50 ns
    -6.7A
    20V
    5A
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -20V
    -1V
    0.03Ohm
    -1 V
    Unknown
    -
    -
    -
    -
    -
    -
    -
    -
  • SI3443DVTRPBF
    -
    Surface Mount
    Surface Mount
    SOT-23-6 Thin, TSOT-23-6
    6
    -
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    HEXFET®
    2004
    -
    -
    Obsolete
    2 (1 Year)
    -
    -
    65mOhm
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    -
    2W Ta
    -
    -
    2W
    12 ns
    P-Channel
    -
    65mOhm @ 4.4A, 4.5V
    1.2V @ 250μA
    1079pF @ 10V
    4.4A Ta
    15nC @ 4.5V
    33ns
    20V
    2.5V 4.5V
    ±12V
    72 ns
    70 ns
    -4.4A
    12V
    -
    -
    990.6μm
    3.0988mm
    1.7mm
    No
    RoHS Compliant
    Lead Free
    -20V
    -1.2V
    -
    -1.2 V
    No SVHC
    Micro6™(TSOP-6)
    SMD/SMT
    150°C
    -55°C
    -20V
    1.079nF
    65mOhm
    65 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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