Vishay Siliconix SI3456DDV-T1-E3
- Part Number:
- SI3456DDV-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2850222-SI3456DDV-T1-E3
- Description:
- MOSFET N-CH 30V 6.3A 6TSOP
- Datasheet:
- SI3456DDV-T1-E3
Vishay Siliconix SI3456DDV-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3456DDV-T1-E3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-23-6 Thin, TSOT-23-6
- Number of Pins6
- Weight19.986414mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance40mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count6
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1.7W Ta 2.7W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.7W
- Turn On Delay Time12 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs40m Ω @ 5A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds325pF @ 15V
- Current - Continuous Drain (Id) @ 25°C6.3A Tc
- Gate Charge (Qg) (Max) @ Vgs9nC @ 10V
- Rise Time13ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)13 ns
- Turn-Off Delay Time16 ns
- Continuous Drain Current (ID)5A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)5A
- DS Breakdown Voltage-Min30V
- Height1mm
- Length3.05mm
- Width1.65mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI3456DDV-T1-E3 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 325pF @ 15V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 16 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI3456DDV-T1-E3 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 16 ns
a 30V drain to source voltage (Vdss)
SI3456DDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3456DDV-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 325pF @ 15V.This device has a continuous drain current (ID) of [5A], which is its maximum continuous current.A device's drain current is its maximum continuous current, and this device's drain current is 5A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 16 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 12 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 30V.In order to operate this transistor, a voltage of 30V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (4.5V 10V).
SI3456DDV-T1-E3 Features
a continuous drain current (ID) of 5A
the turn-off delay time is 16 ns
a 30V drain to source voltage (Vdss)
SI3456DDV-T1-E3 Applications
There are a lot of Vishay Siliconix
SI3456DDV-T1-E3 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
SI3456DDV-T1-E3 More Descriptions
Single N-Channel 30 V 0.04 Ohm 2.7 W Surface Mount Power Mosfet - TSOP-6
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOP T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:6Pinsrohs Compliant: No
Trans MOSFET N-CH 30V 6.3A 6-Pin TSOP T/R
Transistor Polarity:n Channel; Drain Source Voltage Vds:30V; Continuous Drain Current Id:5A; On Resistance Rds(On):0.033Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:3V; No. Of Pins:6Pinsrohs Compliant: No
The three parts on the right have similar specifications to SI3456DDV-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)DS Breakdown Voltage-MinHeightLengthWidthRadiation HardeningRoHS StatusLead FreeDrain to Source Breakdown VoltageThreshold VoltageDrain-source On Resistance-MaxNominal VgsREACH SVHCSupplier Device PackageTerminationMax Operating TemperatureMin Operating TemperatureDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI3456DDV-T1-E314 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR9940mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260306111.7W Ta 2.7W TcSingleENHANCEMENT MODE1.7W12 nsN-ChannelSWITCHING40m Ω @ 5A, 10V3V @ 250μA325pF @ 15V6.3A Tc9nC @ 10V13ns30V4.5V 10V±20V13 ns16 ns5A20V5A30V1mm3.05mm1.65mmNoROHS3 CompliantLead Free--------------
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14 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)6EAR9928MOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260306112.1W Ta 2.98W TcSingleENHANCEMENT MODE-18 nsN-ChannelSWITCHING28m Ω @ 7A, 10V3V @ 250μA735pF @ 15V8A Tc19.6nC @ 10V85ns-4.5V 10V±20V12 ns17 ns7A20V7A-1mm3.05mm1.65mmNoROHS3 CompliantLead Free30V------------
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14 WeeksSurface MountSurface MountSOT-23-6 Thin, TSOT-23-6619.986414mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesActive1 (Unlimited)6EAR99-Matte Tin (Sn)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260306111.14W TaSingleENHANCEMENT MODE1.14W10 nsP-ChannelSWITCHING30m Ω @ 6.7A, 10V3V @ 250μA-5A Ta30nC @ 10V12ns-4.5V 10V±20V35 ns50 ns-6.7A20V5A----NoROHS3 Compliant--20V-1V0.03Ohm-1 VUnknown--------
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-Surface MountSurface MountSOT-23-6 Thin, TSOT-23-66---55°C~150°C TJTape & Reel (TR)HEXFET®2004--Obsolete2 (1 Year)--65mOhm--MOSFET (Metal Oxide)-----1-2W Ta--2W12 nsP-Channel-65mOhm @ 4.4A, 4.5V1.2V @ 250μA1079pF @ 10V4.4A Ta15nC @ 4.5V33ns20V2.5V 4.5V±12V72 ns70 ns-4.4A12V--990.6μm3.0988mm1.7mmNoRoHS CompliantLead Free-20V-1.2V--1.2 VNo SVHCMicro6™(TSOP-6)SMD/SMT150°C-55°C-20V1.079nF65mOhm65 mΩ
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