Fairchild/ON Semiconductor SI3443DV

Name: SI3443DV
Brand: Fairchild/ON Semiconductor
SKU: 2480904-SI3443DV
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI3443DV

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2480904-SI3443DV

Description:: MOSFET P-CH 20V 4A SSOT-6

ECAD Model:

Datasheet:: Si3443DV

Specifications

Fairchild/ON Semiconductor SI3443DV technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SI3443DV.

Lifecycle Status
ACTIVE (Last Updated: 14 hours ago)
Factory Lead Time
10 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
36mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Cut Tape (CT)
Series
PowerTrench®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Number of Elements
1
Power Dissipation-Max
1.6W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.6W
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
65m Ω @ 4A, 4.5V
Vgs(th) (Max) @ Id
1.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
640pF @ 10V
Current - Continuous Drain (Id) @ 25°C
4A Ta
Gate Charge (Qg) (Max) @ Vgs
10nC @ 4.5V
Rise Time
19ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
19 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
-4A
Threshold Voltage
-700mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
4A
Drain to Source Breakdown Voltage
-20V
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI3443DV Description
Fairchild's innovative PowerTrench process was specifically tuned to minimize on-state resistance while maintaining low gate charge for enhanced switching performance in this P-Channel 2.6V MOSFET. These devices were created to provide outstanding power dissipation in a tiny container for situations where larger products are not feasible.

SI3443DV Features
?-4 A, -20 V. = 0.065 ￡2 @ V* = 45 V RoS(ON| =0.100 Q@Vgs = -2.5V RoS(ON| =0.100 Q@Vgs = -2.5V
?Extremely fast switching speed.
?Low entry fee (7.2nC typical).
?Extremely low Rdsionj thanks to high-performance trench technology
?Small footprint (72 percent smaller than conventional SO-8) and low profile of the SuperSOPM-6 package (1mm thick).

SI3443DV Applications
?Turn on the load switch
?Protection against battery drain
?Effective power management

SI3443DV More Descriptions

P-Channel 2.5V Specified PowerTrench® MOSFET -20V, -4A, 65mΩ
Res Thick Film 0603 110K Ohm 1% 0.1W(1/10W) ±100ppm/C Pad SMD Automotive T/R
Si3443DV Series 40 V 4 A 65 mOhm P-Channel Specified PowerTrench MOSFET - SSOT-6
MOSFET, P-CH, -20V, -4A, SOT-23-6; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Source Voltage Vds:-20V; On Resistance
This P-Channel 2.5V specified MOSFET is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain low gate charge for superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the larger packages are impractical.

Product Comparison

The three parts on the right have similar specifications to SI3443DV.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Published

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Drain-source On Resistance-Max

Nominal Vgs

Resistance

Number of Channels

Height

Length

Width

View Compare
SI3443DV

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 14 hours ago)

10 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

36mg

SILICON

-55°C~150°C TJ

Cut Tape (CT)

PowerTrench®

e3

yes

Active

1 (Unlimited)

6

EAR99

Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

1

1.6W Ta

Single

ENHANCEMENT MODE

1.6W

11 ns

P-Channel

SWITCHING

65m Ω @ 4A, 4.5V

1.5V @ 250μA

640pF @ 10V

4A Ta

10nC @ 4.5V

19ns

20V

2.5V 4.5V

±8V

19 ns

26 ns

-4A

-700mV

8V

4A

-20V

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
SI3434DV-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

1

1.14W Ta

Single

ENHANCEMENT MODE

2W

21 ns

N-Channel

SWITCHING

34m Ω @ 6.1A, 4.5V

600mV @ 1mA (Min)

-

4.6A Ta

12nC @ 4.5V

45ns

-

2.5V 4.5V

±12V

30 ns

40 ns

4.6A

4V

12V

-

30V

Unknown

No

ROHS3 Compliant

-

2011

260

30

6

0.034Ohm

4 V

-

-

-

-

-

SI3443DV vs SI3434DV-T1-GE3
SI3424BDV-T1-GE3

Vishay Siliconix

-

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

19.986414mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

1

2.1W Ta 2.98W Tc

Single

ENHANCEMENT MODE

-

18 ns

N-Channel

SWITCHING

28m Ω @ 7A, 10V

3V @ 250μA

735pF @ 15V

8A Tc

19.6nC @ 10V

85ns

-

4.5V 10V

±20V

12 ns

17 ns

7A

-

20V

7A

30V

-

No

ROHS3 Compliant

Lead Free

2013

260

30

6

-

-

28MOhm

1

1mm

3.05mm

1.65mm

SI3443DV vs SI3424BDV-T1-GE3
SI3454CDV-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

PURE MATTE TIN

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

1

1.25W Ta 1.5W Tc

Single

ENHANCEMENT MODE

1.25W

-

N-Channel

SWITCHING

50m Ω @ 3.8A, 10V

3V @ 250μA

305pF @ 15V

4.2A Tc

10.6nC @ 10V

-

-

4.5V 10V

±20V

-

-

3.8A

-

20V

4.2A

30V

-

No

ROHS3 Compliant

-

2013

260

30

6

0.05Ohm

-

-

-

-

-

-

SI3443DV vs SI3454CDV-T1-GE3