Vishay Siliconix SI3430DV-T1-GE3

Name: SI3430DV-T1-GE3
Brand: Vishay Siliconix
SKU: 2481702-SI3430DV-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI3430DV-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2481702-SI3430DV-T1-GE3

Description:: MOSFET N-CH 100V 1.8A 6-TSOP

ECAD Model:

Datasheet:: SI3430DV-T1-GE3

Specifications

Vishay Siliconix SI3430DV-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI3430DV-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
SOT-23-6 Thin, TSOT-23-6
Number of Pins
6
Weight
19.986414mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
6
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
6
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
1.14W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.14W
Turn On Delay Time
9 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
170m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id
2V @ 250μA (Min)
Current - Continuous Drain (Id) @ 25°C
1.8A Ta
Gate Charge (Qg) (Max) @ Vgs
6.6nC @ 10V
Rise Time
11ns
Drive Voltage (Max Rds On,Min Rds On)
6V 10V
Vgs (Max)
±20V
Fall Time (Typ)
9 ns
Turn-Off Delay Time
16 ns
Continuous Drain Current (ID)
1.8A
Threshold Voltage
2V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
100V
Nominal Vgs
2 V
Height
1mm
Length
3.05mm
Width
1.65mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

SI3430DV-T1-GE3 Overview
This device conducts a continuous drain current (ID) of 1.8A, which is the maximum continuous current transistor can conduct.Using VGS=100V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 100V (that is, no charge flow from drain to source).When the device is turned off, a turn-off delay time of 16 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 9 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 20V.Activation of any electrical operation happens at threshold voltage, and this transistor has 2V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 6V 10V volts (6V 10V).

SI3430DV-T1-GE3 Features
a continuous drain current (ID) of 1.8A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 16 ns
a threshold voltage of 2V

SI3430DV-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI3430DV-T1-GE3 applications of single MOSFETs transistors.

Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching

SI3430DV-T1-GE3 More Descriptions

Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R
N CHANNEL MOSFET, 100V, 2.4A, TSOP-6
Small Signal Field-Effect Transistor, 1.8A I(D), 100V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET 100V 2.4A 2.0W 170mohm @ 10V
N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Tr; N CHANNEL MOSFET, 100V, 2.4A, TSOP-6; Transistor Polarity:N Channel; Continuous Drain Current Id:2.4A; Drain Source Voltage Vds:100V; On Resistance Rds(on):170mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:2V

Product Comparison

The three parts on the right have similar specifications to SI3430DV-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Series

Transistor Application

Drain-source On Resistance-Max

Drain Current-Max (Abs) (ID)

Supplier Device Package

Termination

Resistance

Max Operating Temperature

Min Operating Temperature

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Dual Supply Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Lead Free

View Compare
SI3430DV-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

19.986414mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

1

1.14W Ta

Single

ENHANCEMENT MODE

1.14W

9 ns

N-Channel

170m Ω @ 2.4A, 10V

2V @ 250μA (Min)

1.8A Ta

6.6nC @ 10V

11ns

6V 10V

±20V

9 ns

16 ns

1.8A

2V

20V

100V

2 V

1mm

3.05mm

1.65mm

Unknown

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI3434DV-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Obsolete

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

-

1.14W Ta

Single

ENHANCEMENT MODE

2W

21 ns

N-Channel

34m Ω @ 6.1A, 4.5V

600mV @ 1mA (Min)

4.6A Ta

12nC @ 4.5V

45ns

2.5V 4.5V

±12V

30 ns

40 ns

4.6A

4V

12V

30V

4 V

-

-

-

Unknown

No

ROHS3 Compliant

TrenchFET®

SWITCHING

0.034Ohm

-

-

-

-

-

-

-

-

-

-

-

-

-

SI3430DV-T1-GE3 vs SI3434DV-T1-GE3
SI3469DV-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

19.986414mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2016

e3

yes

Active

1 (Unlimited)

6

EAR99

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

6

1

1

1.14W Ta

Single

ENHANCEMENT MODE

1.14W

10 ns

P-Channel

30m Ω @ 6.7A, 10V

3V @ 250μA

5A Ta

30nC @ 10V

12ns

4.5V 10V

±20V

35 ns

50 ns

-6.7A

-1V

20V

-20V

-1 V

-

-

-

Unknown

No

ROHS3 Compliant

TrenchFET®

SWITCHING

0.03Ohm

5A

-

-

-

-

-

-

-

-

-

-

-

-

SI3430DV-T1-GE3 vs SI3469DV-T1-GE3
SI3443DVTRPBF

Infineon Technologies

-

Surface Mount

Surface Mount

SOT-23-6 Thin, TSOT-23-6

6

-

-

-55°C~150°C TJ

Tape & Reel (TR)

2004

-

-

Obsolete

2 (1 Year)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

2W Ta

-

-

2W

12 ns

P-Channel

65mOhm @ 4.4A, 4.5V

1.2V @ 250μA

4.4A Ta

15nC @ 4.5V

33ns

2.5V 4.5V

±12V

72 ns

70 ns

-4.4A

-1.2V

12V

-20V

-1.2 V

990.6μm

3.0988mm

1.7mm

No SVHC

No

RoHS Compliant

HEXFET®

-

-

-

Micro6™(TSOP-6)

SMD/SMT

65mOhm

150°C

-55°C

1079pF @ 10V

20V

-20V

1.079nF

65mOhm

65 mΩ

Lead Free

SI3430DV-T1-GE3 vs SI3443DVTRPBF

Certification

Related parts for SI3430DV-T1-GE3

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SI3430D~~(3)~~
SI3430~~(3)~~
SI343~~(23)~~
SI34~~(149)~~
SI3~~(85)~~

Part Number	Manufacturers	Description	Stock	Price
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R RoHS: Compliant	838	323 $0.2246 500 $0.2214
SI3430DV-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant	1159	1 $1.16 10 $1.026 100 $0.8111 500 $0.62902 1000 $0.4966
SI3430DV-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant	1159	1 $1.16 10 $1.026 100 $0.8111 500 $0.62902 1000 $0.4966
SI3430DV-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 100V 1.8A 6-TSOP RoHS: Compliant	0	3000 $0.44999
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Tape RoHS: Not Compliant	0	3000 $0.4659 6000 $0.4639 12000 $0.4629 18000 $0.4609 30000 $0.4599
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R (Alt: S RoHS: Compliant	0	1 $0.6869 10 $0.4689 25 $0.4029 50 $0.3719 100 $0.3579 500 $0.3529 1000 $0.3469
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 100V 1.8A 6-Pin TSOP T/R - Produ RoHS: Not Compliant	0	1 $1.26 25 $1.04 50 $0.917 100 $0.794 250 $0.738 500 $0.682 1000 $0.539
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6, Transistor	838	1 $0.155 25 $0.155 50 $0.155 100 $0.155 250 $0.155 500 $0.155 1000 $0.155
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	N CH MOSFET, Transistor Polarity:N Channel, Cont	0	1 $0.51 3000 $0.507 6000 $0.483 12000 $0.427
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 100V 2.4A 2.0W 170mohm @ 10V RoHS: Compliant	3280	1 $1.26 10 $1.04 100 $0.794 500 $0.682 1000 $0.539 3000 $0.503 6000 $0.478 9000 $0.467
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1 $1.98
SI3430DV-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 100V, 2.4A, TSOP-6 RoHS: Compliant	838	1 $1.11 25 $0.921 50 $0.813 100 $0.703 250 $0.653

Vishay Siliconix SI3430DV-T1-GE3

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