Vishay Siliconix SI2343DS-T1-E3
- Part Number:
- SI2343DS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2481899-SI2343DS-T1-E3
- Description:
- MOSFET P-CH 30V 3.1A SOT23-3
- Datasheet:
- SI2343DS-T1-E3
Vishay Siliconix SI2343DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2343DS-T1-E3.
- Factory Lead Time33 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2009
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance53mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max750mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation750mW
- Turn On Delay Time10 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs53m Ω @ 4A, 10V
- Vgs(th) (Max) @ Id3V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds540pF @ 15V
- Current - Continuous Drain (Id) @ 25°C3.1A Ta
- Gate Charge (Qg) (Max) @ Vgs21nC @ 10V
- Rise Time15ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time31 ns
- Continuous Drain Current (ID)-4A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Max Junction Temperature (Tj)150°C
- Nominal Vgs-1 V
- Height1.12mm
- Length3.04mm
- Width1.4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2343DS-T1-E3 Overview
A device's maximum input capacitance is 540pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-30V, and this device has a drain-to-source breakdown voltage of -30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI2343DS-T1-E3 Features
a continuous drain current (ID) of -4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 31 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI2343DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2343DS-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 540pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-30V, and this device has a drain-to-source breakdown voltage of -30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.
SI2343DS-T1-E3 Features
a continuous drain current (ID) of -4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 31 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)
SI2343DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2343DS-T1-E3 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI2343DS-T1-E3 More Descriptions
Single P-Channel 30 V 0.053 Ohms Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P CHANNEL MOSFET, -30V, 4A, TO-236; Tran; P CHANNEL MOSFET, -30V, 4A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3
Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P CHANNEL MOSFET, -30V, 4A, TO-236; Tran; P CHANNEL MOSFET, -30V, 4A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3
The three parts on the right have similar specifications to SI2343DS-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishDrain Current-Max (Abs) (ID)Supplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI2343DS-T1-E333 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2009e3yesActive1 (Unlimited)3EAR9953mOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26030311750mW TaSingleENHANCEMENT MODE750mW10 nsP-ChannelSWITCHING53m Ω @ 4A, 10V3V @ 250μA540pF @ 15V3.1A Ta21nC @ 10V15ns30V4.5V 10V±20V15 ns31 ns-4A-1V20V-30V150°C-1 V1.12mm3.04mm1.4mmUnknownNoROHS3 CompliantLead Free---------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2015e3yesObsolete1 (Unlimited)3EAR9940mOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031-960mW Ta 1.7W TcSingleENHANCEMENT MODE--P-ChannelSWITCHING40m Ω @ 4.1A, 4.5V800mV @ 250μA740pF @ 4V5.4A Tc15nC @ 4.5V11ns-1.8V 4.5V±8V11 ns22 ns4.1A-8V-8V------NoROHS3 CompliantLead FreeMATTE TIN5.4A------
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----11710mW TaSingle-710mW18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V---1.02mm3.04mm1.4mm--ROHS3 Compliant---SOT-23-3150°C-55°C970pF45mOhm45 mΩ
-
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2012--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1710mW TaSingle--18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V-8V--1.02mm3.04mm1.4mm--ROHS3 Compliant---SOT-23-3150°C-55°C970pF45mOhm45 mΩ
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