SI2343DS-T1-E3

Vishay Siliconix SI2343DS-T1-E3

Part Number:
SI2343DS-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2481899-SI2343DS-T1-E3
Description:
MOSFET P-CH 30V 3.1A SOT23-3
ECAD Model:
Datasheet:
SI2343DS-T1-E3

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Specifications
Vishay Siliconix SI2343DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2343DS-T1-E3.
  • Factory Lead Time
    33 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2009
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    53mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    750mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    750mW
  • Turn On Delay Time
    10 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    53m Ω @ 4A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    540pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    21nC @ 10V
  • Rise Time
    15ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    15 ns
  • Turn-Off Delay Time
    31 ns
  • Continuous Drain Current (ID)
    -4A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -30V
  • Max Junction Temperature (Tj)
    150°C
  • Nominal Vgs
    -1 V
  • Height
    1.12mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI2343DS-T1-E3 Overview
A device's maximum input capacitance is 540pF @ 15V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is -4A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-30V, and this device has a drain-to-source breakdown voltage of -30V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 31 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -1V.To operate this transistor, you need to apply a 30V drain to source voltage (Vdss).This device uses no drive voltage (4.5V 10V) to reduce its overall power consumption.

SI2343DS-T1-E3 Features
a continuous drain current (ID) of -4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 31 ns
a threshold voltage of -1V
a 30V drain to source voltage (Vdss)


SI2343DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2343DS-T1-E3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
SI2343DS-T1-E3 More Descriptions
Single P-Channel 30 V 0.053 Ohms Surface Mount Power Mosfet - SOT-23
Small Signal Field-Effect Transistor, 3.1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P CHANNEL MOSFET, -30V, 4A, TO-236; Tran; P CHANNEL MOSFET, -30V, 4A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-4A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):53mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-3V; No. of Pins:3
Product Comparison
The three parts on the right have similar specifications to SI2343DS-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI2343DS-T1-E3
    SI2343DS-T1-E3
    33 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2009
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    53mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    10 ns
    P-Channel
    SWITCHING
    53m Ω @ 4A, 10V
    3V @ 250μA
    540pF @ 15V
    3.1A Ta
    21nC @ 10V
    15ns
    30V
    4.5V 10V
    ±20V
    15 ns
    31 ns
    -4A
    -1V
    20V
    -30V
    150°C
    -1 V
    1.12mm
    3.04mm
    1.4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2305ADS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    SILICON
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    40mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    -
    960mW Ta 1.7W Tc
    Single
    ENHANCEMENT MODE
    -
    -
    P-Channel
    SWITCHING
    40m Ω @ 4.1A, 4.5V
    800mV @ 250μA
    740pF @ 4V
    5.4A Tc
    15nC @ 4.5V
    11ns
    -
    1.8V 4.5V
    ±8V
    11 ns
    22 ns
    4.1A
    -
    8V
    -8V
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    MATTE TIN
    5.4A
    -
    -
    -
    -
    -
    -
  • SI2311DS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    1
    710mW Ta
    Single
    -
    710mW
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    8V
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    -
    8V
    -
    -
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
  • SI2311DS-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    710mW Ta
    Single
    -
    -
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    8V
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    -
    8V
    -8V
    -
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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