Vishay Siliconix SI2337DS-T1-GE3
- Part Number:
- SI2337DS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2484855-SI2337DS-T1-GE3
- Description:
- MOSFET P-CH 80V 2.2A SOT23-3
- ECAD Model:
-
- Datasheet:
- SI2337DS-T1-GE3
Vishay Siliconix SI2337DS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2337DS-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-50°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2014
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance270MOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max760mW Ta 2.5W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation760mW
- Turn On Delay Time15 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs270m Ω @ 1.2A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds500pF @ 40V
- Current - Continuous Drain (Id) @ 25°C2.2A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time18ns
- Drain to Source Voltage (Vdss)80V
- Drive Voltage (Max Rds On,Min Rds On)6V 10V
- Vgs (Max)±20V
- Fall Time (Typ)12 ns
- Turn-Off Delay Time20 ns
- Continuous Drain Current (ID)-2.2A
- Threshold Voltage-4V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-80V
- Nominal Vgs-4 V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2337DS-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 500pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -2.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-80V. And this device has -80V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -4V threshold voltage. Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
SI2337DS-T1-GE3 Features
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -80V voltage
the turn-off delay time is 20 ns
a threshold voltage of -4V
a 80V drain to source voltage (Vdss)
SI2337DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2337DS-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 500pF @ 40V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is -2.2A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=-80V. And this device has -80V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 20 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 15 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has -4V threshold voltage. Operating this transistor requires a 80V drain to source voltage (Vdss).By using drive voltage (6V 10V), this device helps reduce its overall power consumption.
SI2337DS-T1-GE3 Features
a continuous drain current (ID) of -2.2A
a drain-to-source breakdown voltage of -80V voltage
the turn-off delay time is 20 ns
a threshold voltage of -4V
a 80V drain to source voltage (Vdss)
SI2337DS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2337DS-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SI2337DS-T1-GE3 More Descriptions
In a Pack of 20, P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 Vishay SI2337DS-T1-GE3
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R / MOSFET P-CH 80V 2.2A SOT23-3
Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236
Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to 150°C
Trans MOSFET P-CH 80V 2.2A 3-Pin SOT-23 T/R / MOSFET P-CH 80V 2.2A SOT23-3
Single P-Channel 80 V 0.27 Ohms Surface Mount Power Mosfet - TO-236
Small Signal Field-Effect Transistor, 0.0012A I(D), 80V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
MOSFET, P CH, 80V, 2.2A, TO-236; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.2A; Drain Source Voltage Vds:-80V; On Resistance Rds(on):0.216ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-4V; Power Dissipation Pd:760mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-236; No. of Pins:3; Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to SI2337DS-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxTerminal FinishTransistor ApplicationDrain Current-Max (Abs) (ID)View Compare
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SI2337DS-T1-GE314 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesActive1 (Unlimited)3EAR99270MOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26030311760mW Ta 2.5W TcSingleENHANCEMENT MODE760mW15 nsP-Channel270m Ω @ 1.2A, 10V4V @ 250μA500pF @ 40V2.2A Tc17nC @ 10V18ns80V6V 10V±20V12 ns20 ns-2.2A-4V20V-80V-4 V1.02mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free---------- -
--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33---55°C~150°C TJTape & Reel (TR)TrenchFET®2012--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----1-710mW TaSingle-710mW-P-Channel48mOhm @ 3.6A, 4.5V900mV @ 250μA780pF @ 6V3.2A Ta14nC @ 4.5V35ns12V1.8V 4.5V±8V35 ns65 ns3.2A-8V20V------ROHS3 Compliant-SOT-23-3 (TO-236)150°C-55°C780pF48mOhm48 mΩ---
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2013--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1750mW TaSingle-1.25W25 nsP-Channel39mOhm @ 4.7A, 4.5V1V @ 250μA1020pF @ 10V3.7A Ta19nC @ 4.5V43ns20V1.8V 4.5V±8V43 ns71 ns3.7A-8V-20V-1.02mm3.04mm1.4mm--ROHS3 Compliant-SOT-23-3 (TO-236)150°C-55°C1.02nF39mOhm39 mΩ---
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-50°C~150°C TJTape & Reel (TR)TrenchFET®2014e3yesObsolete1 (Unlimited)3EAR9940MOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031-960mW Ta 1.7W TcSingleENHANCEMENT MODE960mW-P-Channel40m Ω @ 4.1A, 4.5V800mV @ 250μA740pF @ 4V5.4A Tc15nC @ 4.5V11ns-1.8V 4.5V±8V11 ns22 ns-4.1A-800mV8V8V-800 mV---UnknownNoROHS3 CompliantLead Free------MATTE TINSWITCHING5.4A
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