Vishay Siliconix SI2333DS-T1-E3

Name: SI2333DS-T1-E3
Brand: Vishay Siliconix
SKU: 2478091-SI2333DS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2333DS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478091-SI2333DS-T1-E3

Description:: MOSFET P-CH 12V 4.1A SOT23-3

ECAD Model:

Datasheet:: SI2333DS-T1-E3

Specifications

Vishay Siliconix SI2333DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2333DS-T1-E3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
32mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
Turn On Delay Time
25 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
32m Ω @ 5.3A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1100pF @ 6V
Current - Continuous Drain (Id) @ 25°C
4.1A Ta
Gate Charge (Qg) (Max) @ Vgs
18nC @ 4.5V
Rise Time
45ns
Drain to Source Voltage (Vdss)
12V
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
72 ns
Continuous Drain Current (ID)
-4.1A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
-12V
Max Junction Temperature (Tj)
150°C
Nominal Vgs
-1 V
Height
1.12mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2333DS-T1-E3 Overview
The maximum input capacitance of this device is 1100pF @ 6V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.1A.When VGS=-12V, and ID flows to VDS at -12VVDS, the drain-source breakdown voltage is -12V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 72 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 12V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI2333DS-T1-E3 Features
a continuous drain current (ID) of -4.1A
a drain-to-source breakdown voltage of -12V voltage
the turn-off delay time is 72 ns
a threshold voltage of -1V
a 12V drain to source voltage (Vdss)

SI2333DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2333DS-T1-E3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SI2333DS-T1-E3 More Descriptions

Single P-Channel 12 V 0.032 Ohms Surface Mount Power Mosfet - SOT-23
12V 4.1A 750mW 32m´Î@4.5V5.3A 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -12V, RDS(ON) 0.025Ohm, ID -4.1A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2333DS-T1-E3
Small Signal Field-Effect Transistor, 4.1A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-5.3A; Drain Source Voltage Vds:-12V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.1A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-12V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V

Product Comparison

The three parts on the right have similar specifications to SI2333DS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Drain Current-Max (Abs) (ID)

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI2333DS-T1-E3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

3

EAR99

32mOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

25 ns

P-Channel

SWITCHING

32m Ω @ 5.3A, 4.5V

1V @ 250μA

1100pF @ 6V

4.1A Ta

18nC @ 4.5V

45ns

12V

1.8V 4.5V

±8V

45 ns

72 ns

-4.1A

-1V

8V

-12V

150°C

-1 V

1.12mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
SI2305ADS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2015

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

40mOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

960mW Ta 1.7W Tc

Single

ENHANCEMENT MODE

-

-

P-Channel

SWITCHING

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

-

1.8V 4.5V

±8V

11 ns

22 ns

4.1A

-

8V

-8V

-

-

-

-

-

-

No

ROHS3 Compliant

Lead Free

5.4A

-

-

-

-

-

-

SI2333DS-T1-E3 vs SI2305ADS-T1-E3
SI2323DS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

1020pF @ 10V

3.7A Ta

19nC @ 4.5V

43ns

20V

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

SOT-23-3 (TO-236)

150°C

-55°C

1.02nF

39mOhm

39 mΩ

SI2333DS-T1-E3 vs SI2323DS-T1
SI2311DS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

1

710mW Ta

Single

-

710mW

18 ns

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

970pF @ 4V

3A Ta

12nC @ 4.5V

45ns

8V

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

SOT-23-3

150°C

-55°C

970pF

45mOhm

45 mΩ

SI2333DS-T1-E3 vs SI2311DS-T1-E3

Certification

Related parts for SI2333DS-T1-E3

SI2303CDS-T1-GE3

Vishay Siliconix

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Vishay Siliconix

MOSFET P-CH 8V 3A SOT23
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Vishay Siliconix

MOSFET P-CH 8V 3A SOT23
SI2305ADS-T1-GE3

Vishay Siliconix

MOSFET P-CH 8V 5.4A SOT23-3

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SI2333DS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2333DS-T1-E3 DISTI #V72:2272_07433766	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	879	1 $0.7641 10 $0.6724 25 $0.5502 100 $0.4696 250 $0.4226 500 $0.3718
SI2333DS-T1-E3 DISTI #V36:1790_07433766	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	0	3000 $0.3409
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3CT-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant	175498	1 $0.7 10 $0.615 100 $0.4712 500 $0.37248 1000 $0.29798
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3DKR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant	175498	1 $0.7 10 $0.615 100 $0.4712 500 $0.37248 1000 $0.29798
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3TR-ND	Vishay Siliconix	MOSFET P-CH 12V 4.1A SOT23-3 RoHS: Compliant	171000	3000 $0.26217 6000 $0.24409 15000 $0.23505 30000 $0.22903
SI2333DS-T1-E3 DISTI #32896906	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	12000	3000 $0.3656
SI2333DS-T1-E3 DISTI #32906440	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	879	19 $0.7641
SI2333DS-T1-E3 DISTI #30605241	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin SOT-23 T/R RoHS: Compliant	103	23 $1.0987
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	9000	3000 $0.2 6000 $0.19231 9000 $0.18519 15000 $0.17857 30000 $0.17241 75000 $0.16949 150000 $0.16667
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0	3000 $0.5219 6000 $0.3559 12000 $0.3059 18000 $0.2829 30000 $0.2629
SI2333DS-T1-E3 DISTI #SI2333DS-T1-E3	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	3000 $0.3639 6000 $0.35311 12000 $0.33875 18000 $0.32938 30000 $0.32051
SI2333DS-T1-E3 DISTI #71T8047	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	1 $0.428 6000 $0.416 12000 $0.401
SI2333DS-T1-E3 DISTI #06J7587	Vishay Intertechnologies	Trans MOSFET P-CH 12V 4.1A 3-Pin TO-236 T/R - Prod RoHS: Not Compliant	0	1 $1.1 25 $0.901 50 $0.796 100 $0.691 250 $0.644 500 $0.595 1000 $0.469
SI2333DS-T1-E3 DISTI #06J7587	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 4.1A TO-236, Transistor P	3005	1 $1.1 25 $0.91 50 $0.804 100 $0.699 250 $0.65 500 $0.601 1000 $0.474
SI2333DS-T1-E3 DISTI #71T8047	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 4.1A TO-236, FULL REEL, T	3000	1 $0.474 3000 $0.474
SI2333DS-T1-E3 DISTI #70026098	Vishay Siliconix	MOSFET, Power, P-Ch, VDSS -12V, RDS(ON) 0.025O RoHS: Compliant	16	1 $0.486 25 $0.464 100 $0.442 250 $0.421 500 $0.399
SI2333DS-T1-E3 DISTI #	Vishay Intertechnologies	Single P-Channel 12 V 0.032 Ohms Surface Mount Pow RoHS: Compliant	15000	3000 $0.26
SI2333DS-T1-E3 DISTI #	Vishay Intertechnologies	Single P-Channel 12 V 0.032 Ohms Surface Mount Pow RoHS: Compliant	863	1 $0.62 100 $0.385 250 $0.35 500 $0.325 1500 $0.29
SI2333DS-T1-E3 DISTI #781-SI2333DS-T1-E3	Vishay Intertechnologies	MOSFET 12V 5.3A 1.25W 32 mohms @ 4.5V RoHS: Compliant	29392	1 $0.87 10 $0.72 100 $0.552 500 $0.475 1000 $0.374 3000 $0.349 6000 $0.332 9000 $0.32 24000 $0.309
SI2333DS-T1-E3 DISTI #	Vishay Siliconix	4100 MA, 12 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET	1332	1 $0.96 126 $0.336 596 $0.3
SI2333DS-T1-E3 DISTI #	Vishay Semiconductors	4100 MA, 12 V, P-CHANNEL, SI, SMALL SIGNAL, MOSFET	1070	1 $0.96 126 $0.336 596 $0.3
SI2333DS-T1-E3 DISTI #	Vishay Siliconix		15
SI2333DST1E3 DISTI #	Vishay Intertechnologies		3597
SI2333DS-T1-E3 DISTI #C1S803600844317	Vishay Intertechnologies	MOSFETs RoHS: Compliant	103	1 $0.879 10 $0.439 50 $0.397
SI2333DS-T1-E3 DISTI #2371205	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 4.1A TO-236, FUL	3000	3000 $0.429
SI2333DS-T1-E3 DISTI #2371205	Vishay Intertechnologies	P CHANNEL MOSFET, -12V, 4.1A TO-236, FULL REEL RoHS: Compliant	3000	3000 $0.45
SI2333DS-T1-E3 DISTI #1470108RL	Vishay Intertechnologies	MOSFET, P, SOT-23 RoHS: Compliant	0	10 $0.927 100 $0.711 500 $0.562 1000 $0.45
SI2333DS-T1-E3 DISTI #1470108	Vishay Intertechnologies	MOSFET, P, SOT-23 RoHS: Compliant	2865	10 $0.927 100 $0.711 500 $0.562 1000 $0.45
SI2333DS-T1-E3 DISTI #XSFP00000063443	Vishay Siliconix	RoHS: Compliant	12466	3000 $0.3714 12466 $0.3467

SI2333D~~(5)~~
SI2333~~(12)~~
SI233~~(26)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2333DS-T1-E3

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