Vishay Siliconix SI2323DS-T1-E3
- Part Number:
- SI2323DS-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2478049-SI2323DS-T1-E3
- Description:
- MOSFET P-CH 20V 3.7A SOT23-3
- Datasheet:
- SI2323DS-T1-E3
Vishay Siliconix SI2323DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2323DS-T1-E3.
- Factory Lead Time15 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Weight1.437803g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance39mOhm
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max750mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1.25W
- Turn On Delay Time25 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs39m Ω @ 4.7A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1020pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.7A Ta
- Gate Charge (Qg) (Max) @ Vgs19nC @ 4.5V
- Rise Time43ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)43 ns
- Turn-Off Delay Time71 ns
- Continuous Drain Current (ID)-4.7A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Nominal Vgs-1 V
- Height1.02mm
- Length3.04mm
- Width1.4mm
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2323DS-T1-E3 Overview
The maximum input capacitance of this device is 1020pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.7A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 71 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI2323DS-T1-E3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 71 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI2323DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2323DS-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1020pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.7A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 71 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.
SI2323DS-T1-E3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 71 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI2323DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2323DS-T1-E3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI2323DS-T1-E3 More Descriptions
Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3
MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -20V, RDS(ON) 0.031Ohm, ID -3.7A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2323DS-T1-E3
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -20V, RDS(ON) 0.031Ohm, ID -3.7A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2323DS-T1-E3
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
The three parts on the right have similar specifications to SI2323DS-T1-E3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTerminal FinishReach Compliance CodeQualification StatusDrain-source On Resistance-MaxSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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SI2323DS-T1-E315 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803gSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3yesActive1 (Unlimited)3EAR9939mOhmOther TransistorsMOSFET (Metal Oxide)DUALGULL WING26030311750mW TaSingleENHANCEMENT MODE1.25W25 nsP-ChannelSWITCHING39m Ω @ 4.7A, 4.5V1V @ 250μA1020pF @ 10V3.7A Ta19nC @ 4.5V43ns20V1.8V 4.5V±8V43 ns71 ns-4.7A-1V8V-20V-1 V1.02mm3.04mm1.4mmUnknownNoROHS3 CompliantLead Free-----------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3yesObsolete1 (Unlimited)3EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING2603031-750mW TaSingleENHANCEMENT MODE750mW13 nsP-Channel-51m Ω @ 4A, 4.5V450mV @ 250μA (Min)1225pF @ 6V3.2A Ta15nC @ 4.5V--1.8V 4.5V±8V-50 ns3.2A-8V12V------ROHS3 Compliant-Matte Tin (Sn)unknownNot Qualified0.051Ohm------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)-----11710mW TaSingle-710mW18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V--1.02mm3.04mm1.4mm--ROHS3 Compliant-----SOT-23-3150°C-55°C970pF45mOhm45 mΩ
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-331.437803g--55°C~150°C TJTape & Reel (TR)TrenchFET®2012--Obsolete1 (Unlimited)----MOSFET (Metal Oxide)------1710mW TaSingle--18 nsP-Channel-45mOhm @ 3.5A, 4.5V800mV @ 250μA970pF @ 4V3A Ta12nC @ 4.5V45ns8V1.8V 4.5V±8V45 ns40 ns-3A-8V-8V-1.02mm3.04mm1.4mm--ROHS3 Compliant-----SOT-23-3150°C-55°C970pF45mOhm45 mΩ
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