SI2323DS-T1-E3

Vishay Siliconix SI2323DS-T1-E3

Part Number:
SI2323DS-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
2478049-SI2323DS-T1-E3
Description:
MOSFET P-CH 20V 3.7A SOT23-3
ECAD Model:
Datasheet:
SI2323DS-T1-E3

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Specifications
Vishay Siliconix SI2323DS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2323DS-T1-E3.
  • Factory Lead Time
    15 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    39mOhm
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    750mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1.25W
  • Turn On Delay Time
    25 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    39m Ω @ 4.7A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1020pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.7A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    19nC @ 4.5V
  • Rise Time
    43ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    43 ns
  • Turn-Off Delay Time
    71 ns
  • Continuous Drain Current (ID)
    -4.7A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Nominal Vgs
    -1 V
  • Height
    1.02mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    Unknown
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI2323DS-T1-E3 Overview
The maximum input capacitance of this device is 1020pF @ 10V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is -4.7A.When VGS=-20V, and ID flows to VDS at -20VVDS, the drain-source breakdown voltage is -20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 71 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 25 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.The drain-to-source voltage (Vdss) of this transistor needs to be at 20V in order to operate.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI2323DS-T1-E3 Features
a continuous drain current (ID) of -4.7A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 71 ns
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


SI2323DS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2323DS-T1-E3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SI2323DS-T1-E3 More Descriptions
Si2323DS Series 20 V 3.7 A 39 mOhm Surface Mount P-Channel Mosfet - SOT-23-3
MOSFET P-CH 20V 3.7A SOT23-3 / Trans MOSFET P-CH 20V 3.7A 3-Pin SOT-23 T/R
20V 3.7A 39m´Î@4.5V4.7A 750mW 1V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, Power, P-Ch, VDSS -20V, RDS(ON) 0.031Ohm, ID -3.7A, TO-236 (SOT-23),PD 0.75W | Siliconix / Vishay SI2323DS-T1-E3
Small Signal Field-Effect Transistor, 3.7A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:-4.7A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):39mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:-1V; Power Dissipation Pd:1.25W; Transistor Case Style:SOT-23; No. of Pins:3; Current Id Max:-4.7A; Package / Case:SOT-23; Termination Type:SMD; Voltage Vds Typ:-20V; Voltage Vgs Max:-1V; Voltage Vgs Rds on Measurement:-4.5V
Product Comparison
The three parts on the right have similar specifications to SI2323DS-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    Drain-source On Resistance-Max
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • SI2323DS-T1-E3
    SI2323DS-T1-E3
    15 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    39mOhm
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    1
    750mW Ta
    Single
    ENHANCEMENT MODE
    1.25W
    25 ns
    P-Channel
    SWITCHING
    39m Ω @ 4.7A, 4.5V
    1V @ 250μA
    1020pF @ 10V
    3.7A Ta
    19nC @ 4.5V
    43ns
    20V
    1.8V 4.5V
    ±8V
    43 ns
    71 ns
    -4.7A
    -1V
    8V
    -20V
    -1 V
    1.02mm
    3.04mm
    1.4mm
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2335DS-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    MOSFET (Metal Oxide)
    DUAL
    GULL WING
    260
    30
    3
    1
    -
    750mW Ta
    Single
    ENHANCEMENT MODE
    750mW
    13 ns
    P-Channel
    -
    51m Ω @ 4A, 4.5V
    450mV @ 250μA (Min)
    1225pF @ 6V
    3.2A Ta
    15nC @ 4.5V
    -
    -
    1.8V 4.5V
    ±8V
    -
    50 ns
    3.2A
    -
    8V
    12V
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    unknown
    Not Qualified
    0.051Ohm
    -
    -
    -
    -
    -
    -
  • SI2311DS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2016
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    1
    1
    710mW Ta
    Single
    -
    710mW
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    8V
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    -
    8V
    -
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
  • SI2311DS-T1-GE3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    1.437803g
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    -
    1
    710mW Ta
    Single
    -
    -
    18 ns
    P-Channel
    -
    45mOhm @ 3.5A, 4.5V
    800mV @ 250μA
    970pF @ 4V
    3A Ta
    12nC @ 4.5V
    45ns
    8V
    1.8V 4.5V
    ±8V
    45 ns
    40 ns
    -3A
    -
    8V
    -8V
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    SOT-23-3
    150°C
    -55°C
    970pF
    45mOhm
    45 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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