Vishay Siliconix SI2312CDS-T1-GE3

SI2312CDS-T1-GE3 Overview
Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 865pF @ 10V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 6A amps.In this device, the drain-source breakdown voltage is 20V and VGS=20V, so the drain-source breakdown voltage is 20V in this case.A device can conduct a maximum continuous current of [6A] according to its drain current.It is [31 ns] because it takes time to charge the input capacitance of the device before drain current conduction can begin.A turn-on delay time of 8 ns indicates the time it takes for the input capacitance of the device to charge before drain current conduction starts.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 8V.Normally, electrical devices are set to activate all of their operations at threshold voltages, and this transistor's threshold voltage is 1V.A device like this reduces its overall power consumption when it uses drive voltage (1.8V 4.5V).

SI2312CDS-T1-GE3 Features
a continuous drain current (ID) of 6A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 31 ns
a threshold voltage of 1V


SI2312CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2312CDS-T1-GE3 applications of single MOSFETs transistors.


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Motor drives and Uninterruptible Power Supplies
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DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
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Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies