Vishay Siliconix SI2312BDS-T1-E3

Name: SI2312BDS-T1-E3
Brand: Vishay Siliconix
SKU: 2484586-SI2312BDS-T1-E3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2312BDS-T1-E3

Manufacturer:: Vishay Siliconix

Ventron No:: 2484586-SI2312BDS-T1-E3

Description:: MOSFET N-CH 20V 3.9A SOT23-3

ECAD Model:

Datasheet:: SI2312BDS-T1-E3

Specifications

Vishay Siliconix SI2312BDS-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2312BDS-T1-E3.

Factory Lead Time
14 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2008
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
Termination
SMD/SMT
ECCN Code
EAR99
Resistance
31mOhm
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
750mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
750mW
Turn On Delay Time
9 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
31m Ω @ 5A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C
3.9A Ta
Gate Charge (Qg) (Max) @ Vgs
12nC @ 4.5V
Rise Time
30ns
Drive Voltage (Max Rds On,Min Rds On)
1.8V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
35 ns
Continuous Drain Current (ID)
5A
Threshold Voltage
850mV
Gate to Source Voltage (Vgs)
8V
Drain to Source Breakdown Voltage
20V
Dual Supply Voltage
20V
Nominal Vgs
450 mV
Height
1.016mm
Length
3.0226mm
Width
1.397mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2312BDS-T1-E3 Overview
Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 5A.When VGS=20V, and ID flows to VDS at 20VVDS, the drain-source breakdown voltage is 20V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 35 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 9 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is 850mV volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (1.8V 4.5V), this device helps reduce its power consumption.

SI2312BDS-T1-E3 Features
a continuous drain current (ID) of 5A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
a threshold voltage of 850mV

SI2312BDS-T1-E3 Applications
There are a lot of Vishay Siliconix
SI2312BDS-T1-E3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SI2312BDS-T1-E3 More Descriptions

Transistor: N-MOSFET; unipolar; 20V; 3.9A; 0.031ohm; 0.75W; -55 150 deg.C; SMD; SOT23
Single N-Channel 20 V 0.031 Ohms Surface Mount Power Mosfet - SOT-23
VISHAY SILICONIX SI2312BDS-T1-E3 MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL
Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 3.9A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3, FULL REEL; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:3.9A; Transistor Mounting:Surface Mount; Rds(on) Test Voltage:4.5V; No. of Pins:3Pins RoHS Compliant: No
MOSFET, N, SOT-23; Transistor Polarity:N Channel; Continuous Drain Current Id:3.9A; Drain Source Voltage Vds:20V; On Resistance Rds(on):47mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:850mV; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:2312; Current Id Max:5A; Package / Case:SOT-23; Power Dissipation Pd:750µW; Pulse Current Idm:15A; SMD Marking:M2; Termination Type:SMD; Voltage Vds Typ:20V; Voltage Vgs Max:850mV; Voltage Vgs Rds on Measurement:4.5V; Voltage Vgs th Max:0.85V; Voltage Vgs th Min:0.45V

Product Comparison

The three parts on the right have similar specifications to SI2312BDS-T1-E3.

Image

Part Number

Manufacturer

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Dual Supply Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Terminal Finish

Drain Current-Max (Abs) (ID)

View Compare
SI2312BDS-T1-E3

Vishay Siliconix

14 Weeks

Tin

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2008

e3

yes

Active

1 (Unlimited)

3

SMD/SMT

EAR99

31mOhm

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

750mW Ta

Single

ENHANCEMENT MODE

750mW

9 ns

N-Channel

SWITCHING

31m Ω @ 5A, 4.5V

850mV @ 250μA

3.9A Ta

12nC @ 4.5V

30ns

1.8V 4.5V

±8V

10 ns

35 ns

5A

850mV

8V

20V

20V

450 mV

1.016mm

3.0226mm

1.397mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
SI2331DS-T1-E3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

-

710mW Ta

Single

-

710mW

-

P-Channel

-

48mOhm @ 3.6A, 4.5V

900mV @ 250μA

3.2A Ta

14nC @ 4.5V

35ns

1.8V 4.5V

±8V

35 ns

65 ns

3.2A

-

8V

20V

-

-

-

-

-

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

780pF @ 6V

12V

780pF

48mOhm

48 mΩ

-

-

SI2312BDS-T1-E3 vs SI2331DS-T1-E3
SI2323DS-T1

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

1020pF @ 10V

20V

1.02nF

39mOhm

39 mΩ

-

-

SI2312BDS-T1-E3 vs SI2323DS-T1
SI2305ADS-T1-GE3

Vishay Siliconix

-

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

yes

Obsolete

1 (Unlimited)

3

-

EAR99

40MOhm

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

960mW Ta 1.7W Tc

Single

ENHANCEMENT MODE

960mW

-

P-Channel

SWITCHING

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

5.4A Tc

15nC @ 4.5V

11ns

1.8V 4.5V

±8V

11 ns

22 ns

-4.1A

-800mV

8V

8V

-

-800 mV

-

-

-

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

740pF @ 4V

-

-

-

-

MATTE TIN

5.4A

SI2312BDS-T1-E3 vs SI2305ADS-T1-GE3

Certification

Related parts for SI2312BDS-T1-E3

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Vishay Siliconix

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SI2305ADS-T1-E3

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MOSFET P-CH 12V 3.2A SOT23-3
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MOSFET P-CH 20V 3.1A SOT23-3
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MOSFET P-CH 20V 3.7A SOT23
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MOSFET N-CH 20V 2.1A SOT23-3
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SI2312BDS-T1-E3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2312BDS-T1-E3 DISTI #V72:2272_09216792	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	3	1 $0.5768
SI2312BDS-T1-E3 DISTI #V36:1790_09216792	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3CT-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	117509	1 $0.46 10 $0.397 100 $0.2961 500 $0.23268 1000 $0.1798
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3DKR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	117509	1 $0.46 10 $0.397 100 $0.2961 500 $0.23268 1000 $0.1798
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3TR-ND	Vishay Siliconix	MOSFET N-CH 20V 3.9A SOT23-3 RoHS: Compliant	117000	3000 $0.15917 6000 $0.1489 15000 $0.13863 30000 $0.13144 75000 $0.13007
SI2312BDS-T1-E3 DISTI #33694263	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin SOT-23 T/R RoHS: Compliant	24000	3000 $0.2203
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Cut RoHS: Compliant	890	1 $0.10877 6000 $0.10587 12000 $0.10312 18000 $0.10051 30000 $0.09802
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0	3000 $0.3809 6000 $0.2599 12000 $0.2239 18000 $0.2059 30000 $0.1919
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	3000 $0.11558 6000 $0.11215 12000 $0.10759 18000 $0.10461 30000 $0.10179
SI2312BDS-T1-E3 DISTI #SI2312BDS-T1-E3	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R (Alt: RoHS: Compliant	0
SI2312BDS-T1-E3 DISTI #51K6950	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Prod RoHS: Not Compliant	0	1 $0.75 25 $0.573 50 $0.499 100 $0.425 250 $0.388 500 $0.349 1000 $0.27
SI2312BDS-T1-E3 DISTI #85W0175	Vishay Intertechnologies	Trans MOSFET N-CH 20V 3.9A 3-Pin TO-236 T/R - Tape RoHS: Not Compliant	0	1 $0.254 6000 $0.241 12000 $0.231 18000 $0.228 30000 $0.225
SI2312BDS-T1-E3 DISTI #85W0175	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, SOT-23-3,	0	1 $0.282 3000 $0.282
SI2312BDS-T1-E3 DISTI #51K6950	Vishay Intertechnologies	N CHANNEL MOSFET, Transistor Polarity:N Channel,	14208	1 $0.189 25 $0.189 50 $0.189 100 $0.189 250 $0.189 500 $0.189
SI2312BDS-T1-E3. DISTI #26AC3318	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1 $0.282 3000 $0.282
SI2312BDS-T1-E3 DISTI #70026195	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	3000 $0.303 6000 $0.297 15000 $0.288 30000 $0.276 75000 $0.258
SI2312BDS-T1-E3/BKN DISTI #70026355	Vishay Siliconix	N-CHANNEL 20-V (D-S) MOSFET RoHS: Compliant	0	1 $0.29 2 $0.284 5 $0.276 10 $0.264 25 $0.247
SI2312BDS-T1-E3 DISTI #781-SI2312BDS-E3	Vishay Intertechnologies	MOSFET N-Channel 20V 3.9A RoHS: Compliant	58264	1 $0.59 10 $0.457 100 $0.339 500 $0.278 1000 $0.215 3000 $0.196 6000 $0.183 9000 $0.171
SI2312BDS-T1-E3 DISTI #	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohms Surface Mount Pow RoHS: Compliant	2537	1 $0.26 100 $0.2 250 $0.192 500 $0.185 1500 $0.174
SI2312BDS-T1-E3 DISTI #	Vishay Intertechnologies	Single N-Channel 20 V 0.031 Ohms Surface Mount Pow RoHS: Compliant	36000	3000 $0.157
SI2312BDS-T1-E3 DISTI #	Vishay Intertechnologies		511
SI2312BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET Transistor, N-Channel, SOT-23	498	1 $0.69 19 $0.3105 162 $0.207
SI2312BDST1E3 DISTI #	Vishay Intertechnologies	Small Signal Field-Effect Transistor, 3.9A I(D), 2 RoHS: Compliant	3000
SI2312BDS-T1-E3 DISTI #XSFP00000027021	Vishay Siliconix	RoHS: Compliant	31370	3000 $0.2243 31370 $0.2093
SI2312BDS-T1-E3 DISTI #	Vishay Intertechnologies	MOSFET N-Channel 20V 3.9A RoHS: Compliant	75000
SI2312BDS-T1-E3 DISTI #2396085	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3 RoHS: Compliant	26506	1 $0.69 10 $0.598 100 $0.447 500 $0.351
SI2312BDS-T1-E3 DISTI #2367266	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.025OHM, 3.9A, RoHS: Compliant	0	3000 $0.288
SI2312BDS-T1-E3 DISTI #2396085RL	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3 RoHS: Compliant	0	1 $0.69 10 $0.598 100 $0.447 500 $0.351
SI2312BDS-T1-E3 DISTI #1497608	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	0	1 $0.69 10 $0.598 100 $0.447 500 $0.351
SI2312BDS-T1-E3 DISTI #2396085	Vishay Intertechnologies	MOSFET, N-CH, 20V, 3.9A, SOT-23-3	26062	1 $0.489 10 $0.394 100 $0.264 250 $0.229 500 $0.194

SI2312B~~(3)~~
SI2312~~(12)~~
SI231~~(62)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2312BDS-T1-E3

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