Vishay Siliconix SI2309CDS-T1-GE3

Name: SI2309CDS-T1-GE3
Brand: Vishay Siliconix
SKU: 2478089-SI2309CDS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2309CDS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478089-SI2309CDS-T1-GE3

Description:: MOSFET P-CH 60V 1.6A SOT23-3

ECAD Model:

Datasheet:: SI2309CDS-T1-GE3

Specifications

Vishay Siliconix SI2309CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2309CDS-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2011
JESD-609 Code
e3
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
345mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Voltage
60V
Power Dissipation-Max
1W Ta 1.7W Tc
Element Configuration
Single
Current
12A
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.7W
Turn On Delay Time
40 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
345m Ω @ 1.25A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
210pF @ 30V
Current - Continuous Drain (Id) @ 25°C
1.6A Tc
Gate Charge (Qg) (Max) @ Vgs
4.1nC @ 4.5V
Rise Time
35ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
35 ns
Turn-Off Delay Time
15 ns
Continuous Drain Current (ID)
1.2A
Threshold Voltage
-1V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Height
1.02mm
Length
3.04mm
Width
1.4mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2309CDS-T1-GE3 Overview
The maximum input capacitance of this device is 210pF @ 30V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 1.2A.When VGS=-60V, and ID flows to VDS at -60VVDS, the drain-source breakdown voltage is -60V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 15 ns.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 40 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.This transistor's threshold voltage is -1V volts, which indicates that a transistor is ready to perform any of its operations at that voltage.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

SI2309CDS-T1-GE3 Features
a continuous drain current (ID) of 1.2A
a drain-to-source breakdown voltage of -60V voltage
the turn-off delay time is 15 ns
a threshold voltage of -1V

SI2309CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2309CDS-T1-GE3 applications of single MOSFETs transistors.

Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,

SI2309CDS-T1-GE3 More Descriptions

SI2309CDS Series P-Channel 60 V 0.345 Ohm Power MosFet Surface Mount - SOT-23-3
Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R
Small Signal Field-Effect Transistor, 1.6A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET, P-CH, -60V, -1.6A, SOT23; Transistor Polarity:P Channel; Continuous Drain Current Id:-1.6A; Drain Source Voltage Vds:-60V; On Resistance Rds(on):0.285ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs:-1V; Power Dissipation Pd:1.7W; Transistor Case Style:SOT-23; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; Current Id Max:-1.6A; Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to 150°C; Voltage Vgs Max:20V

Product Comparison

The three parts on the right have similar specifications to SI2309CDS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Voltage

Power Dissipation-Max

Element Configuration

Current

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Pbfree Code

Reach Compliance Code

Qualification Status

Drain-source On Resistance-Max

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

Drain Current-Max (Abs) (ID)

Nominal Vgs

View Compare
SI2309CDS-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e3

Active

1 (Unlimited)

3

EAR99

345mOhm

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

60V

1W Ta 1.7W Tc

Single

12A

ENHANCEMENT MODE

1.7W

40 ns

P-Channel

SWITCHING

345m Ω @ 1.25A, 10V

3V @ 250μA

210pF @ 30V

1.6A Tc

4.1nC @ 4.5V

35ns

4.5V 10V

±20V

35 ns

15 ns

1.2A

-1V

20V

-60V

1.02mm

3.04mm

1.4mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI2335DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

e3

Obsolete

1 (Unlimited)

3

EAR99

-

Matte Tin (Sn)

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

-

750mW Ta

Single

-

ENHANCEMENT MODE

750mW

13 ns

P-Channel

-

51m Ω @ 4A, 4.5V

450mV @ 250μA (Min)

1225pF @ 6V

3.2A Ta

15nC @ 4.5V

-

1.8V 4.5V

±8V

-

50 ns

3.2A

-

8V

12V

-

-

-

-

-

ROHS3 Compliant

-

yes

unknown

Not Qualified

0.051Ohm

-

-

-

-

-

-

-

-

-

SI2309CDS-T1-GE3 vs SI2335DS-T1-GE3
SI2323DS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

-

750mW Ta

Single

-

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

1020pF @ 10V

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-20V

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

-

-

-

-

SOT-23-3 (TO-236)

150°C

-55°C

20V

1.02nF

39mOhm

39 mΩ

-

-

SI2309CDS-T1-GE3 vs SI2323DS-T1
SI2305ADS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

-

SILICON

-50°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2014

e3

Obsolete

1 (Unlimited)

3

EAR99

40MOhm

MATTE TIN

Other Transistors

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

-

-

960mW Ta 1.7W Tc

Single

-

ENHANCEMENT MODE

960mW

-

P-Channel

SWITCHING

40m Ω @ 4.1A, 4.5V

800mV @ 250μA

740pF @ 4V

5.4A Tc

15nC @ 4.5V

11ns

1.8V 4.5V

±8V

11 ns

22 ns

-4.1A

-800mV

8V

8V

-

-

-

Unknown

No

ROHS3 Compliant

Lead Free

yes

-

-

-

-

-

-

-

-

-

-

5.4A

-800 mV

SI2309CDS-T1-GE3 vs SI2305ADS-T1-GE3

Certification

Related parts for SI2309CDS-T1-GE3

SI2303CDS-T1-GE3

Vishay Siliconix

MOSFET P-CH 30V 2.7A SOT23-3
SI2305ADS-T1-E3

Vishay Siliconix

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Vishay Siliconix

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Vishay Siliconix

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Vishay Siliconix

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Vishay Siliconix

MOSFET P-CH 8V 3A SOT23
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Vishay Siliconix

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SI2309CDS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2309CDS-T1-GE3 DISTI #V72:2272_09216791	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	826	1 $0.5852 10 $0.4525 25 $0.4071 100 $0.305 500 $0.2493
SI2309CDS-T1-GE3 DISTI #V36:1790_09216791	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET P-CH 60V 1.6A SOT23-3 RoHS: Compliant	86234	1 $0.57 10 $0.487 100 $0.3634 500 $0.28552 1000 $0.22063
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET P-CH 60V 1.6A SOT23-3 RoHS: Compliant	86234	1 $0.57 10 $0.487 100 $0.3634 500 $0.28552 1000 $0.22063
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET P-CH 60V 1.6A SOT23-3 RoHS: Compliant	84000	3000 $0.1953 6000 $0.1827 15000 $0.1701 30000 $0.16128
SI2309CDS-T1-GE3 DISTI #30294705	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	78000	3000 $0.135
SI2309CDS-T1-GE3 DISTI #33704672	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	42000	3000 $0.2328
SI2309CDS-T1-GE3 DISTI #32397916	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	3240	421 $0.1831
SI2309CDS-T1-GE3 DISTI #32724052	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	826	54 $0.5852
SI2309CDS-T1-GE3 DISTI #30654464	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R RoHS: Compliant	746	36 $0.7112
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	60755	3000 $0.2749 6000 $0.1869 12000 $0.1609 18000 $0.1489 30000 $0.1379
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	15000	3000 $0.33033 6000 $0.26966 9000 $0.22395 15000 $0.19431 30000 $0.181 75000 $0.17618 150000 $0.1716
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R - Cut RoHS: Compliant	2645	1 $0.21818 6000 $0.21053 12000 $0.20339 18000 $0.19672 30000 $0.19048
SI2309CDS-T1-GE3 DISTI #SI2309CDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.17467 6000 $0.16949 12000 $0.1626 18000 $0.1581 30000 $0.15385
SI2309CDS-T1-GE3 DISTI #69W7188	Vishay Intertechnologies	Trans MOSFET P-CH 60V 1.2A 3-Pin SOT-23 T/R - Prod RoHS: Not Compliant	0	1 $0.57 25 $0.434 50 $0.378 100 $0.322 250 $0.294 500 $0.265 1000 $0.205
SI2309CDS-T1-GE3 DISTI #15R4906	Vishay Intertechnologies	MOSFET Transistor, P Channel, -1.6 A, -60 V, 285 m	0	1 $0.207 5000 $0.202 10000 $0.186 20000 $0.174 30000 $0.162 50000 $0.155
SI2309CDS-T1-GE3 DISTI #69W7188	Vishay Intertechnologies	MOSFET, P CHANNEL, -60V, -1.6A, SOT-23-3, Transis	3240	1 $0.119 25 $0.119 50 $0.119 100 $0.119 250 $0.119 500 $0.119 1000 $0.119
SI2309CDS-T1-GE3. DISTI #28AC2125	Vishay Intertechnologies	Transistor Polarity:P Channel, Continuous Drain C	0	1 $0.207 5000 $0.202 10000 $0.186 20000 $0.174 30000 $0.162 50000 $0.155
SI2309CDS-T1-GE3 DISTI #70026446	Vishay Siliconix	MOSFET, P-CH, Vds -60V, Vgs /- 20V, Rds(on) 2 RoHS: Compliant	2974	1 $0.269 25 $0.258 100 $0.247 250 $0.236 500 $0.224
SI2309CDS-T1-GE3 DISTI #	Vishay Intertechnologies	SI2309CDS Series P-Channel 60 V 0.345 Ohm Power Mo RoHS: Compliant	1346	1 $0.245 100 $0.205 250 $0.197 500 $0.191 1500 $0.183
SI2309CDS-T1-GE3 DISTI #	Vishay Intertechnologies	SI2309CDS Series P-Channel 60 V 0.345 Ohm Power Mo RoHS: Compliant	63000	3000 $0.165
SI2309CDS-T1-GE3 DISTI #781-SI2309CDS-GE3	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SOT-23 RoHS: Compliant	39075	1 $0.56 10 $0.433 100 $0.321 500 $0.264 1000 $0.204 3000 $0.185 6000 $0.173 9000 $0.162
SI2309CDS-T1-GE3 DISTI #7103250	Vishay Intertechnologies	MOSFET P-CHANNEL 60V 1.2A SOT23, PK	1690	10 $0.42 30 $0.273 150 $0.233 750 $0.191 1500 $0.164
SI2309CDS-T1-GE3 DISTI #7103250P	Vishay Intertechnologies	MOSFET P-CHANNEL 60V 1.2A SOT23, RL	17780	30 $0.273 150 $0.233 750 $0.191 1500 $0.164
SI2309CDS-T1-GE3 DISTI #	Vishay Siliconix	POWER, FET, TO-236	2520	1 $0.52 232 $0.182 1100 $0.1625
SI2309CDS-T1-GE3 DISTI #	Vishay Intertechnologies		3000
SI2309CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET -60V Vds 20V Vgs SOT-23 RoHS: Compliant	51000	3000 $0.148 6000 $0.141 12000 $0.136 18000 $0.132
SI2309CDS-T1-GE3. DISTI #	Vishay Intertechnologies	MOSFET 60V 1.6A 1.7W 345mohm @ 10V RoHS: Compliant	975	25 $0.352 100 $0.291 250 $0.262 500 $0.239 1000 $0.186
SI2309CDS-T1-GE3 DISTI #1779264RL	Vishay Intertechnologies	MOSFET, P-CH, -60V, -1.6A, SOT23 RoHS: Compliant	0	1 $0.859 10 $0.654 100 $0.485 500 $0.399 1000 $0.309
SI2309CDS-T1-GE3 DISTI #1779264	Vishay Intertechnologies	MOSFET, P-CH, -60V, -1.6A, SOT23 RoHS: Compliant	16184	1 $0.859 10 $0.654 100 $0.485 500 $0.399 1000 $0.309
SI2309CDS-T1-GE3 DISTI #C1S803600929496	Vishay Intertechnologies	MOSFETs RoHS: Compliant	746	1 $0.569 10 $0.433 50 $0.406 100 $0.304 250 $0.302 500 $0.171
SI2309CDS-T1-GE3 DISTI #XSFP00000090651	Vishay Siliconix	TransistorOutputOptocoupler,1-Element,5300VIsolati RoHS: Compliant	48727	3000 $0.2357 48727 $0.22
SI2309CDS-T1-GE3 DISTI #XSKDRABV0026467	Vishay Intertechnologies	RoHS: Compliant	24555	3000 $0.2029 24555 $0.1893
SI2309CDS-T1-GE3 DISTI #1779264	Vishay Intertechnologies	MOSFET, P-CH, -60V, -1.6A, SOT23	68826	1 $0.499 10 $0.37 100 $0.246 250 $0.224 500 $0.202

SI2309C~~(2)~~
SI2309~~(10)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2309CDS-T1-GE3

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