Vishay Siliconix SI2308BDS-T1-GE3

Name: SI2308BDS-T1-GE3
Brand: Vishay Siliconix
SKU: 2478011-SI2308BDS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2308BDS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478011-SI2308BDS-T1-GE3

Description:: MOSFET N-CH 60V 2.3A SOT23-3

ECAD Model:

Datasheet:: SI2308BDS-T1-GE3

Specifications

Vishay Siliconix SI2308BDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2308BDS-T1-GE3.

Factory Lead Time
14 Weeks
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Surface Mount
YES
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2011
JESD-609 Code
e4
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Silver (Ag)
HTS Code
8541.29.00.95
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Reach Compliance Code
unknown
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1.09W Ta 1.66W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.09W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
156m Ω @ 1.9A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
190pF @ 30V
Current - Continuous Drain (Id) @ 25°C
2.3A Tc
Gate Charge (Qg) (Max) @ Vgs
6.8nC @ 10V
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Continuous Drain Current (ID)
2.3A
Drain Current-Max (Abs) (ID)
1.9A
Drain-source On Resistance-Max
0.156Ohm
DS Breakdown Voltage-Min
60V
RoHS Status
ROHS3 Compliant

Description

SI2308BDS-T1-GE3 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 190pF @ 30V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.3A.1.9A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 60V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 60V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

SI2308BDS-T1-GE3 Features
a continuous drain current (ID) of 2.3A
a 60V drain to source voltage (Vdss)

SI2308BDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2308BDS-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI2308BDS-T1-GE3 More Descriptions

VISHAY - SI2308BDS-T1-GE3 - MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 ohm, 20 V, 3 V
SI2308BDS Series N-Channel 60 V 0.156 Ohm Power MosFet Surface Mount - SOT-23
Transistor NPN MOS SI2308DS/SI2308BDS/T1/GE3 VISHAY RoHS Ampere=2 V=60 SOt23Halfin
Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R
TRANSISTOR 1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, ROHS COMPLIANT, TO-236, 3 PIN, FET General Purpose Small Signal
Small Signal Field-Effect Transistor, 1.9A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,60V,2.3A,SOT23-3; Transistor Polarity:N Channel; Max Current Id:1.9A; Max Voltage Vds:60V; On State Resistance:130mohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:1.09W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3

Product Comparison

The three parts on the right have similar specifications to SI2308BDS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

HTS Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Mount

Supplier Device Package

Weight

Max Operating Temperature

Min Operating Temperature

Number of Channels

Element Configuration

Turn On Delay Time

Rise Time

Forward Voltage

Fall Time (Typ)

Turn-Off Delay Time

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Input Capacitance

Drain to Source Resistance

Rds On Max

Height

Length

Width

View Compare
SI2308BDS-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

TO-236-3, SC-59, SOT-23-3

YES

3

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2011

e4

yes

Active

1 (Unlimited)

3

EAR99

Silver (Ag)

8541.29.00.95

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

unknown

30

3

Not Qualified

1

SINGLE WITH BUILT-IN DIODE

1.09W Ta 1.66W Tc

ENHANCEMENT MODE

1.09W

N-Channel

SWITCHING

156m Ω @ 1.9A, 10V

3V @ 250μA

190pF @ 30V

2.3A Tc

6.8nC @ 10V

60V

4.5V 10V

±20V

2.3A

1.9A

0.156Ohm

60V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
SI2302ADS-T1

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

700mW Ta

-

900mW

N-Channel

-

60mOhm @ 3.6A, 4.5V

1.2V @ 50μA

300pF @ 10V

2.1A Ta

10nC @ 4.5V

20V

2.5V 4.5V

±8V

2.1A

-

-

-

ROHS3 Compliant

Surface Mount

SOT-23-3 (TO-236)

1.437803g

150°C

-55°C

1

Single

7 ns

55ns

760mV

55 ns

16 ns

8V

20V

300pF

60mOhm

60 mΩ

1.02mm

3.04mm

1.4mm

SI2308BDS-T1-GE3 vs SI2302ADS-T1
SI2311DS-T1-E3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

1

-

710mW Ta

-

710mW

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

970pF @ 4V

3A Ta

12nC @ 4.5V

8V

1.8V 4.5V

±8V

-3A

-

-

-

ROHS3 Compliant

Surface Mount

SOT-23-3

1.437803g

150°C

-55°C

1

Single

18 ns

45ns

-

45 ns

40 ns

8V

-

970pF

45mOhm

45 mΩ

1.02mm

3.04mm

1.4mm

SI2308BDS-T1-GE3 vs SI2311DS-T1-E3
SI2311DS-T1-GE3

Vishay Siliconix

-

Surface Mount

TO-236-3, SC-59, SOT-23-3

-

3

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

710mW Ta

-

-

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

970pF @ 4V

3A Ta

12nC @ 4.5V

8V

1.8V 4.5V

±8V

-3A

-

-

-

ROHS3 Compliant

Surface Mount

SOT-23-3

1.437803g

150°C

-55°C

1

Single

18 ns

45ns

-

45 ns

40 ns

8V

-8V

970pF

45mOhm

45 mΩ

1.02mm

3.04mm

1.4mm

SI2308BDS-T1-GE3 vs SI2311DS-T1-GE3

Certification

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SI2308BDS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2308BDS-T1-GE3 DISTI #V72:2272_07432031	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	20	1 $0.5863 10 $0.4955
SI2308BDS-T1-GE3 DISTI #V36:1790_07432031	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	0
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3CT-ND	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3 RoHS: Compliant	52684	1 $0.51 10 $0.433 100 $0.3231 500 $0.25386 1000 $0.19617
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3DKR-ND	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3 RoHS: Compliant	52684	1 $0.51 10 $0.433 100 $0.3231 500 $0.25386 1000 $0.19617
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3TR-ND	Vishay Siliconix	MOSFET N-CH 60V 2.3A SOT23-3 RoHS: Compliant	51000	3000 $0.17365 6000 $0.16245 15000 $0.15125 30000 $0.1434
SI2308BDS-T1-GE3 DISTI #32736667	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	261000	3000 $0.1491
SI2308BDS-T1-GE3 DISTI #32396997	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	18000	3000 $0.1723
SI2308BDS-T1-GE3 DISTI #30601069	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R RoHS: Compliant	4559	53 $0.475
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	0
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	0	3000 $0.2059 6000 $0.1399 12000 $0.1209 18000 $0.1109 30000 $0.1039
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.12125 6000 $0.11766 12000 $0.11287 18000 $0.10975 30000 $0.10679
SI2308BDS-T1-GE3 DISTI #16P3708	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Prod RoHS: Not Compliant	0	1 $0.57 25 $0.434 50 $0.378 100 $0.322 250 $0.294 500 $0.265 1000 $0.205
SI2308BDS-T1-GE3 DISTI #71T8044	Vishay Intertechnologies	Trans MOSFET N-CH 60V 1.9A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	1 $0.18 6000 $0.174 12000 $0.163 18000 $0.159 30000 $0.154
SI2308BDS-T1-GE3 DISTI #47Y1306	Vishay Intertechnologies	MOSFET Transistor, N Channel, 2.3 A, 60 V, 0.13 oh	15645	1 $0.576 25 $0.438 50 $0.382 100 $0.325 250 $0.296 500 $0.268 1000 $0.207
SI2308BDS-T1-GE3 DISTI #16P3708	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 2.3A, TO-236, Transistor P	33615	1 $0.219 25 $0.219 50 $0.219 100 $0.219 250 $0.2 500 $0.2 1000 $0.185
SI2308BDS-T1-GE3 DISTI #71T8044	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 2.3A, TO-236, FULL REEL, T	18000	1 $0.112 3000 $0.112 6000 $0.112
SI2308BDS-T1-GE3. DISTI #81AC9913	Vishay Intertechnologies	N-CHANNEL 60-V (D-S) MOSFET ROHS COMPLIANT: NO	0	1 $0.188 3000 $0.182 6000 $0.176
SI2308BDS-T1-GE3 DISTI #70026410	Vishay Siliconix	MOSFET, N-Ch, Vds 60V, Vgs /- 20V, Rds(on) 19 RoHS: Compliant	0	3000 $0.202
SI2308BDS-T1-GE3 DISTI #781-SI2308BDS-T1-GE3	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant	51269	1 $0.56 10 $0.433 100 $0.321 500 $0.264 1000 $0.204 3000 $0.185
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies	SI2308BDS Series N-Channel 60 V 0.156 Ohm Power Mo RoHS: Compliant	4369	1 $0.245 100 $0.159 250 $0.146 500 $0.137 1500 $0.123
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies	SI2308BDS Series N-Channel 60 V 0.156 Ohm Power Mo RoHS: Compliant	372000	3000 $0.111 6000 $0.106
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies	1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2631	1 $0.328 272 $0.1476 1356 $0.1148
SI2308BDS-T1-GE3 DISTI #	Vishay Siliconix	1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	1828	1 $0.328 272 $0.1476 1356 $0.1148
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies	1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	55	1 $0.328 16 $0.246 42 $0.1845
SI2308BDS-T1-GE3 DISTI #	Vishay Siliconix	1900 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	44	1 $0.328 16 $0.246 42 $0.1845
SI2308BDS-T1-GE3 DISTI #7103257	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 1.9A SOT23, PK	1660	20 $0.336 100 $0.233 200 $0.222 400 $0.214 1000 $0.148
SI2308BDS-T1-GE3 DISTI #7103257P	Vishay Intertechnologies	MOSFET N-CHANNEL 60V 1.9A SOT23, RL	19060	100 $0.233 200 $0.222 400 $0.214 1000 $0.148
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies		60000
SI2308BDS-T1-GE3 DISTI #SI2308BDS-T1-GE3	Vishay Intertechnologies	Transistor: N-MOSFET, unipolar, 60V, 1.8A, 1.0	2850	3 $0.20629 25 $0.18487 100 $0.16345 500 $0.14767 3000 $0.13752
SI2308BDS-T1-GE3 DISTI #TMOSS6321	Vishay Intertechnologies	N-CHAN.-FET 2,3A 60V SOT23 RoHS: Compliant	0	3000 $0.208 6000 $0.196 9000 $0.1842 12000 $0.1663 15000 $0.1605
SI2308BDS-T1-GE3 DISTI #XSFP00000102477	Vishay Siliconix	RoHS: Compliant	299359	3000 $0.1586 299359 $0.148
SI2308BDS-T1-GE3 DISTI #1838997	Vishay Intertechnologies	MOSFET, N CH, 60V, 2.3A, SOT23-3	68470	1 $0.514 10 $0.381 100 $0.253 250 $0.231 500 $0.208
SI2308BDS-T1-GE3 DISTI #2371202	Vishay Intertechnologies	N CHANNEL MOSFET, 60V, 2.3A, TO-236, FULL REEL RoHS: Compliant	18000	3000 $0.262 6000 $0.245 15000 $0.228 30000 $0.226
SI2308BDS-T1-GE3 DISTI #1838997RL	Vishay Intertechnologies	MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant	0	1 $0.77 10 $0.653 100 $0.487 500 $0.383 1000 $0.296
SI2308BDS-T1-GE3 DISTI #1794782	Vishay Intertechnologies	MOSFET, N CH, 60V, 2.3A, TO236 RoHS: Compliant	33615	20 $0.487 500 $0.383 1000 $0.296
SI2308BDS-T1-GE3 DISTI #1838997	Vishay Intertechnologies	MOSFET, N CH, 60V, 2.3A, SOT23-3 RoHS: Compliant	49460	1 $0.77 10 $0.653 100 $0.487 500 $0.383 1000 $0.296
SI2308BDS-T1-GE3 DISTI #C1S803600844122	Vishay Intertechnologies	MOSFETs RoHS: Compliant	4559	10 $0.38 50 $0.265 100 $0.242 500 $0.196 1000 $0.181 3000 $0.137
SI2308BDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 60V Vds 20V Vgs SOT-23 RoHS: Compliant	138000	3000 $0.14 6000 $0.139 12000 $0.137 18000 $0.134
SI2308BDS-T1-GE3. DISTI #	Vishay Intertechnologies	MOSFET 60V 2.3A 1.66W 156mohm @ 10V RoHS: Compliant	1900	25 $0.34 250 $0.264

SI2308B~~(3)~~
SI2308~~(8)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2308BDS-T1-GE3

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