Vishay Siliconix SI2302CDS-T1-GE3

Name: SI2302CDS-T1-GE3
Brand: Vishay Siliconix
SKU: 2478018-SI2302CDS-T1-GE3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: SI2302CDS-T1-GE3

Manufacturer:: Vishay Siliconix

Ventron No:: 2478018-SI2302CDS-T1-GE3

Description:: MOSFET N-CH 20V 2.6A SOT23-3

ECAD Model:

Datasheet:: SI2302CDS-T1-GE3

Specifications

Vishay Siliconix SI2302CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2302CDS-T1-GE3.

Factory Lead Time
14 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-236-3, SC-59, SOT-23-3
Number of Pins
3
Weight
1.437803g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
TrenchFET®
Published
2012
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
57mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Powers
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
30
Pin Count
3
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
710mW Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
710mW
Turn On Delay Time
8 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
57m Ω @ 3.6A, 4.5V
Vgs(th) (Max) @ Id
850mV @ 250μA
Current - Continuous Drain (Id) @ 25°C
2.6A Ta
Gate Charge (Qg) (Max) @ Vgs
5.5nC @ 4.5V
Rise Time
7ns
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±8V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
30 ns
Continuous Drain Current (ID)
2.9A
Threshold Voltage
850mV
Gate to Source Voltage (Vgs)
8V
Drain Current-Max (Abs) (ID)
2.6A
Drain to Source Breakdown Voltage
20V
Max Junction Temperature (Tj)
150°C
Height
1.12mm
Length
3.04mm
Width
1.4mm
REACH SVHC
Unknown
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

SI2302CDS-T1-GE3 Overview
A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 2.9A.With a drain-source breakdown voltage of 20V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 20V.2.6A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 30 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.850mV is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (2.5V 4.5V) reduces this device's overall power consumption.

SI2302CDS-T1-GE3 Features
a continuous drain current (ID) of 2.9A
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 30 ns
a threshold voltage of 850mV

SI2302CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2302CDS-T1-GE3 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

SI2302CDS-T1-GE3 More Descriptions

SI2302CDS-T1-GE3 Vishay Transistor MOSFET N-CH 20V2.6A 3-Pin SOT-23 T/R RoHS
Single N-Channel 20 V 0.057 Ohms Surface Mount Power Mosfet - SOT-23
Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R
N CHANNEL MOSFET, 20V, 2.9A, TO-236; TRA; Transistor Polarity:N Channel; Continuous Drain Current Id:2.9A;
Small Signal Field-Effect Transistor, 2.6A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Mosfet, N Channel, 20V, 0.045Ohm, 2.6A, To-236, Full Reel; Channel Type:N Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:2.9A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:2.5V; Power Dissipation:710Mw Rohs Compliant: No |Vishay SI2302CDS-T1-GE3.

Product Comparison

The three parts on the right have similar specifications to SI2302CDS-T1-GE3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Number of Channels

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Max Junction Temperature (Tj)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Supplier Device Package

Max Operating Temperature

Min Operating Temperature

Input Capacitance (Ciss) (Max) @ Vds

Drain to Source Voltage (Vdss)

Input Capacitance

Drain to Source Resistance

Rds On Max

View Compare
SI2302CDS-T1-GE3

Vishay Siliconix

14 Weeks

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

e3

yes

Active

1 (Unlimited)

3

EAR99

57mOhm

Matte Tin (Sn)

FET General Purpose Powers

MOSFET (Metal Oxide)

DUAL

GULL WING

260

30

3

1

1

710mW Ta

Single

ENHANCEMENT MODE

710mW

8 ns

N-Channel

SWITCHING

57m Ω @ 3.6A, 4.5V

850mV @ 250μA

2.6A Ta

5.5nC @ 4.5V

7ns

2.5V 4.5V

±8V

7 ns

30 ns

2.9A

850mV

8V

2.6A

20V

150°C

1.12mm

3.04mm

1.4mm

Unknown

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
SI2323DS-T1

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2013

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

750mW Ta

Single

-

1.25W

25 ns

P-Channel

-

39mOhm @ 4.7A, 4.5V

1V @ 250μA

3.7A Ta

19nC @ 4.5V

43ns

1.8V 4.5V

±8V

43 ns

71 ns

3.7A

-

8V

-

-20V

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

SOT-23-3 (TO-236)

150°C

-55°C

1020pF @ 10V

20V

1.02nF

39mOhm

39 mΩ

SI2302CDS-T1-GE3 vs SI2323DS-T1
SI2311DS-T1-E3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2016

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

1

1

710mW Ta

Single

-

710mW

18 ns

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

3A Ta

12nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-

-

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

SOT-23-3

150°C

-55°C

970pF @ 4V

8V

970pF

45mOhm

45 mΩ

SI2302CDS-T1-GE3 vs SI2311DS-T1-E3
SI2311DS-T1-GE3

Vishay Siliconix

-

Surface Mount

Surface Mount

TO-236-3, SC-59, SOT-23-3

3

1.437803g

-

-55°C~150°C TJ

Tape & Reel (TR)

TrenchFET®

2012

-

-

Obsolete

1 (Unlimited)

-

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

1

710mW Ta

Single

-

-

18 ns

P-Channel

-

45mOhm @ 3.5A, 4.5V

800mV @ 250μA

3A Ta

12nC @ 4.5V

45ns

1.8V 4.5V

±8V

45 ns

40 ns

-3A

-

8V

-

-8V

-

1.02mm

3.04mm

1.4mm

-

-

ROHS3 Compliant

-

SOT-23-3

150°C

-55°C

970pF @ 4V

8V

970pF

45mOhm

45 mΩ

SI2302CDS-T1-GE3 vs SI2311DS-T1-GE3

Certification

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SI2302CDS-T1-GE3 Specification

Part Number	Manufacturers	Description	Stock	Price
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000 $0.1711
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	1808	1 $0.3738 10 $0.3081 25 $0.3066 100 $0.247 250 $0.2462 500 $0.2123 1000 $0.1732
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT23-3 RoHS: Compliant	37488	1 $0.59 10 $0.499 100 $0.3739 500 $0.27418 1000 $0.21187
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT23-3 RoHS: Compliant	37488	1 $0.59 10 $0.499 100 $0.3739 500 $0.27418 1000 $0.21187
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	MOSFET N-CH 20V 2.6A SOT23-3 RoHS: Compliant	36000	3000 $0.18755
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	30000	3000 $0.1854
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	6000	3000 $0.1711
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R RoHS: Compliant	1808	46 $0.3066 100 $0.247 250 $0.2462 500 $0.2123 1000 $0.1732
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	126000	3000 $0.2299 6000 $0.1559 12000 $0.1349 18000 $0.1239 30000 $0.1159
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Cut RoHS: Not Compliant	0	1 $0.1999 30 $0.1919 75 $0.1859 150 $0.1799 375 $0.1739 750 $0.1689 1500 $0.1659
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R (Alt: RoHS: Compliant	0
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	3000 $0.1599 6000 $0.1549 12000 $0.1489 18000 $0.1439 30000 $0.1409
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Prod RoHS: Not Compliant	0	1 $0.636 25 $0.478 50 $0.416 100 $0.354 250 $0.323 500 $0.292 1000 $0.226
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Trans MOSFET N-CH 20V 2.6A 3-Pin SOT-23 T/R - Tape RoHS: Not Compliant	0	1 $0.184
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, TO-236, FU	15000	1 $0.184 3000 $0.184
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 2.9A, TO-236, Transistor P	0	1 $0.636 25 $0.478 50 $0.416 100 $0.354 250 $0.323 500 $0.292 1000 $0.226
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET Transistor, N Channel, 2.9 A, 20 V, 0.045 o	5885	1 $0.53 25 $0.398 50 $0.347 100 $0.295 250 $0.269 500 $0.243 1000 $0.188
SI2302CDS-T1-GE3. DISTI #	Vishay Intertechnologies	N-CHANNEL 20-V (D-S) MOSFET , ROHS COMPLIANT: NO	0	1 $0.184 3000 $0.184
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	20V 2.9A 0.86W 57mohm @ 4.5V RoHS: Compliant	0	3000 $0.553 6000 $0.406
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SOT-23 RoHS: Compliant	117903	1 $0.53 10 $0.398 100 $0.295 500 $0.243 1000 $0.188 3000 $0.184
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	Single N-Channel 20 V 0.057 Ohms Surface Mount Pow RoHS: Compliant	807000	3000 $0.089 6000 $0.0842 12000 $0.0823
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies		2500
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	2600 mA, 20 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET	2513	1 $1.2 477 $0.375 2134 $0.33
SI2302CDST1GE3 DISTI #	Vishay Semiconductors	INSTOCK	2986
SI2302CDS-T1-GE3 DISTI #	Vishay Siliconix	RoHS: Compliant	2380401	3000 $0.23 2380401 $0.2091
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET 20V Vds 8V Vgs SOT-23 RoHS: Compliant	303000
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFETs	6000	3000 $0.1654
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFETs	30000	3000 $0.173 6000 $0.16 12000 $0.132
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, RoHS: Compliant	15000	3000 $0.162
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N CHANNEL, 20V, 0.045OHM, 2.6A, TO-236, FU RoHS: Compliant	15000	3000 $0.297
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	8330	1 $0.839 10 $0.63 100 $0.468 500 $0.385 1000 $0.298 3000 $0.291
SI2302CDS-T1-GE3 DISTI #	Vishay Intertechnologies	MOSFET, N, SOT-23 RoHS: Compliant	0	1 $0.839 10 $0.63 100 $0.468 500 $0.385 1000 $0.298 3000 $0.291
SI2302CDS-T1-GE3. DISTI #	Vishay Intertechnologies	N CHANNEL MOSFET, 20V, 2.9A, TO-236 RoHS: Compliant	5005	1 $0.839 10 $0.63 100 $0.468 500 $0.385 1000 $0.298 3000 $0.291

SI2302C~~(2)~~
SI2302~~(28)~~
SI230~~(155)~~
SI23~~(173)~~
SI2~~(196)~~

Vishay Siliconix SI2302CDS-T1-GE3

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