SI2301CDS-T1-GE3

Vishay Siliconix SI2301CDS-T1-GE3

Part Number:
SI2301CDS-T1-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
2477990-SI2301CDS-T1-GE3
Description:
MOSFET P-CH 20V 3.1A SOT23-3
ECAD Model:
Datasheet:
SI2301CDS-T1-GE3

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Specifications
Vishay Siliconix SI2301CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2301CDS-T1-GE3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Number of Pins
    3
  • Supplier Device Package
    SOT-23-3 (TO-236)
  • Weight
    1.437803g
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2012
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Resistance
    112mOhm
  • Max Operating Temperature
    150°C
  • Min Operating Temperature
    -55°C
  • Technology
    MOSFET (Metal Oxide)
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    860mW Ta 1.6W Tc
  • Element Configuration
    Single
  • Power Dissipation
    1.6W
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Rds On (Max) @ Id, Vgs
    112mOhm @ 2.8A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    405pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.1A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    10nC @ 4.5V
  • Rise Time
    35ns
  • Drain to Source Voltage (Vdss)
    20V
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    30 ns
  • Continuous Drain Current (ID)
    -3.1A
  • Threshold Voltage
    -1V
  • Gate to Source Voltage (Vgs)
    8V
  • Drain to Source Breakdown Voltage
    -20V
  • Input Capacitance
    405pF
  • Max Junction Temperature (Tj)
    150°C
  • Drain to Source Resistance
    90mOhm
  • Rds On Max
    112 mΩ
  • Nominal Vgs
    -400 mV
  • Height
    1.12mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI2301CDS-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 405pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -3.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 90mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is -1V, which means that it will not activate any of its functions when its threshold voltage reaches -1V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.

SI2301CDS-T1-GE3 Features
a continuous drain current (ID) of -3.1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 90mOhm
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)


SI2301CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2301CDS-T1-GE3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI2301CDS-T1-GE3 More Descriptions
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3100mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.142ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:860mW ;RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3
Product Comparison
The three parts on the right have similar specifications to SI2301CDS-T1-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Supplier Device Package
    Weight
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Resistance
    Max Operating Temperature
    Min Operating Temperature
    Technology
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Input Capacitance
    Max Junction Temperature (Tj)
    Drain to Source Resistance
    Rds On Max
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Operating Mode
    Transistor Application
    Drain Current-Max (Abs) (ID)
    Forward Voltage
    View Compare
  • SI2301CDS-T1-GE3
    SI2301CDS-T1-GE3
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SOT-23-3 (TO-236)
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    Active
    1 (Unlimited)
    112mOhm
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    1
    860mW Ta 1.6W Tc
    Single
    1.6W
    11 ns
    P-Channel
    112mOhm @ 2.8A, 4.5V
    1V @ 250μA
    405pF @ 10V
    3.1A Tc
    10nC @ 4.5V
    35ns
    20V
    2.5V 4.5V
    ±8V
    35 ns
    30 ns
    -3.1A
    -1V
    8V
    -20V
    405pF
    150°C
    90mOhm
    112 mΩ
    -400 mV
    1.12mm
    3.04mm
    1.4mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2305ADS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    -
    -
    -50°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    Obsolete
    1 (Unlimited)
    40mOhm
    -
    -
    MOSFET (Metal Oxide)
    1
    -
    960mW Ta 1.7W Tc
    Single
    -
    -
    P-Channel
    40m Ω @ 4.1A, 4.5V
    800mV @ 250μA
    740pF @ 4V
    5.4A Tc
    15nC @ 4.5V
    11ns
    -
    1.8V 4.5V
    ±8V
    11 ns
    22 ns
    4.1A
    -
    8V
    -8V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    yes
    3
    EAR99
    MATTE TIN
    Other Transistors
    DUAL
    GULL WING
    260
    30
    3
    ENHANCEMENT MODE
    SWITCHING
    5.4A
    -
  • SI2331DS-T1-E3
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    3
    SOT-23-3 (TO-236)
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2012
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    1
    -
    710mW Ta
    Single
    710mW
    -
    P-Channel
    48mOhm @ 3.6A, 4.5V
    900mV @ 250μA
    780pF @ 6V
    3.2A Ta
    14nC @ 4.5V
    35ns
    12V
    1.8V 4.5V
    ±8V
    35 ns
    65 ns
    3.2A
    -
    8V
    20V
    780pF
    -
    48mOhm
    48 mΩ
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SI2302ADS-T1
    -
    -
    Surface Mount
    Surface Mount
    TO-236-3, SC-59, SOT-23-3
    -
    SOT-23-3 (TO-236)
    1.437803g
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    -
    Obsolete
    1 (Unlimited)
    -
    150°C
    -55°C
    MOSFET (Metal Oxide)
    -
    1
    700mW Ta
    Single
    900mW
    7 ns
    N-Channel
    60mOhm @ 3.6A, 4.5V
    1.2V @ 50μA
    300pF @ 10V
    2.1A Ta
    10nC @ 4.5V
    55ns
    20V
    2.5V 4.5V
    ±8V
    55 ns
    16 ns
    2.1A
    -
    8V
    20V
    300pF
    -
    60mOhm
    60 mΩ
    -
    1.02mm
    3.04mm
    1.4mm
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    760mV
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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