Vishay Siliconix SI2301CDS-T1-GE3
- Part Number:
- SI2301CDS-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2477990-SI2301CDS-T1-GE3
- Description:
- MOSFET P-CH 20V 3.1A SOT23-3
- Datasheet:
- SI2301CDS-T1-GE3
Vishay Siliconix SI2301CDS-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI2301CDS-T1-GE3.
- Factory Lead Time14 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Number of Pins3
- Supplier Device PackageSOT-23-3 (TO-236)
- Weight1.437803g
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2012
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance112mOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max860mW Ta 1.6W Tc
- Element ConfigurationSingle
- Power Dissipation1.6W
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs112mOhm @ 2.8A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds405pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.1A Tc
- Gate Charge (Qg) (Max) @ Vgs10nC @ 4.5V
- Rise Time35ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time30 ns
- Continuous Drain Current (ID)-3.1A
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage-20V
- Input Capacitance405pF
- Max Junction Temperature (Tj)150°C
- Drain to Source Resistance90mOhm
- Rds On Max112 mΩ
- Nominal Vgs-400 mV
- Height1.12mm
- Length3.04mm
- Width1.4mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI2301CDS-T1-GE3 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 405pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -3.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 90mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is -1V, which means that it will not activate any of its functions when its threshold voltage reaches -1V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SI2301CDS-T1-GE3 Features
a continuous drain current (ID) of -3.1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 90mOhm
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI2301CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2301CDS-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 405pF @ 10V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has -3.1A continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is -20V, and this device has a drainage-to-source breakdown voltage of -20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 30 ns.This device has a drain-to-source resistance of 90mOhm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 8V to 1.In this case, the threshold voltage of the transistor is -1V, which means that it will not activate any of its functions when its threshold voltage reaches -1V.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (2.5V 4.5V), this device contributes to a reduction in overall power consumption.
SI2301CDS-T1-GE3 Features
a continuous drain current (ID) of -3.1A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 30 ns
single MOSFETs transistor is 90mOhm
a threshold voltage of -1V
a 20V drain to source voltage (Vdss)
SI2301CDS-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI2301CDS-T1-GE3 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
SI2301CDS-T1-GE3 More Descriptions
Trans MOSFET P-CH 20V 3.1A 3-Pin SOT-23 T/R / MOSFET P-CH 20V 3.1A SOT23-3
P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3100mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.142ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:860mW ;RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3
P-CH MOSFET SOT-23 20V 112MOHM @ 4.5V - LEAD(PB) AND HALOGEN FREE
Small Signal Field-Effect Transistor, 3.1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Transistor; Transistor Type:MOSFET; Continuous Drain Current, Id:-3100mA; Drain Source Voltage, Vds:-20V; On Resistance, Rds(on):0.142ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:860mW ;RoHS Compliant: Yes
MOSFET, P-CH, 20V, 3.1A, SOT23; Transistor Polarity:P Channel; Current Id Max:-3.1A; Drain Source Voltage Vds:-20V; On State Resistance:90mohm; Rds(on) Test Voltage Vgs:-4.5V; Voltage Vgs Max:8V; Power Dissipation:1.6W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-23; No. of Pins:3
The three parts on the right have similar specifications to SI2301CDS-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageWeightOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureTechnologyNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageInput CapacitanceMax Junction Temperature (Tj)Drain to Source ResistanceRds On MaxNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Forward VoltageView Compare
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SI2301CDS-T1-GE314 WeeksTinSurface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3 (TO-236)1.437803g-55°C~150°C TJTape & Reel (TR)TrenchFET®2012Active1 (Unlimited)112mOhm150°C-55°CMOSFET (Metal Oxide)11860mW Ta 1.6W TcSingle1.6W11 nsP-Channel112mOhm @ 2.8A, 4.5V1V @ 250μA405pF @ 10V3.1A Tc10nC @ 4.5V35ns20V2.5V 4.5V±8V35 ns30 ns-3.1A-1V8V-20V405pF150°C90mOhm112 mΩ-400 mV1.12mm3.04mm1.4mmNo SVHCNoROHS3 CompliantLead Free-----------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33---50°C~150°C TJTape & Reel (TR)TrenchFET®2015Obsolete1 (Unlimited)40mOhm--MOSFET (Metal Oxide)1-960mW Ta 1.7W TcSingle--P-Channel40m Ω @ 4.1A, 4.5V800mV @ 250μA740pF @ 4V5.4A Tc15nC @ 4.5V11ns-1.8V 4.5V±8V11 ns22 ns4.1A-8V-8V---------NoROHS3 CompliantLead FreeSILICONe3yes3EAR99MATTE TINOther TransistorsDUALGULL WING260303ENHANCEMENT MODESWITCHING5.4A-
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-33SOT-23-3 (TO-236)--55°C~150°C TJTape & Reel (TR)TrenchFET®2012Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)1-710mW TaSingle710mW-P-Channel48mOhm @ 3.6A, 4.5V900mV @ 250μA780pF @ 6V3.2A Ta14nC @ 4.5V35ns12V1.8V 4.5V±8V35 ns65 ns3.2A-8V20V780pF-48mOhm48 mΩ------ROHS3 Compliant-----------------
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--Surface MountSurface MountTO-236-3, SC-59, SOT-23-3-SOT-23-3 (TO-236)1.437803g-55°C~150°C TJTape & Reel (TR)--Obsolete1 (Unlimited)-150°C-55°CMOSFET (Metal Oxide)-1700mW TaSingle900mW7 nsN-Channel60mOhm @ 3.6A, 4.5V1.2V @ 50μA300pF @ 10V2.1A Ta10nC @ 4.5V55ns20V2.5V 4.5V±8V55 ns16 ns2.1A-8V20V300pF-60mOhm60 mΩ-1.02mm3.04mm1.4mm--ROHS3 Compliant----------------760mV
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