Vishay Siliconix SI1902CDL-T1-GE3
- Part Number:
- SI1902CDL-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2474708-SI1902CDL-T1-GE3
- Description:
- MOSFET 2N-CH 20V 1.1A SC-70-6
- ECAD Model:
-
- Datasheet:
- SI1902CDL-T1-GE3
Vishay Siliconix SI1902CDL-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1902CDL-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Weight28.009329mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2016
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance235mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Powers
- Max Power Dissipation420mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation300mW
- Turn On Delay Time4 ns
- FET Type2 N-Channel (Dual)
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs235m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id1.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds62pF @ 10V
- Current - Continuous Drain (Id) @ 25°C1.1A
- Gate Charge (Qg) (Max) @ Vgs3nC @ 10V
- Rise Time13ns
- Fall Time (Typ)9 ns
- Turn-Off Delay Time11 ns
- Continuous Drain Current (ID)1A
- Threshold Voltage1.5V
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage20V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- Max Junction Temperature (Tj)150°C
- FET FeatureLogic Level Gate
- Height1.1mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1902CDL-T1-GE3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1902CDL-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1902CDL-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1902CDL-T1-GE3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1902CDL-T1-GE3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1902CDL-T1-GE3 More Descriptions
Transistor: 2xN-MOSFET; unipolar; 20V; 1.1A; 0.235ohm; 420mW; -55 150 deg.C; SMD; SC70-6
Dual N-Channel 20 V 0.235 Ohm 0.42 W Surface Mount Mosfet - SC-70-6
Transistor MOSFET Array Dual N-CH 20V 1.1A 6-Pin SC-70 T/R
MOSFET, DUAL, N-CH, 20V, 1.1A, SOT-363-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.1A; Source Voltage Vds:20V; On
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:1.1A; Continuous Drain Current Id P Channel:-; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
Dual N-Channel 20 V 0.235 Ohm 0.42 W Surface Mount Mosfet - SC-70-6
Transistor MOSFET Array Dual N-CH 20V 1.1A 6-Pin SC-70 T/R
MOSFET, DUAL, N-CH, 20V, 1.1A, SOT-363-6; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:1.1A; Source Voltage Vds:20V; On
Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:20V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:1.1A; Continuous Drain Current Id P Channel:-; No. of Pins:6Pins; Product Range:- RoHS Compliant: Yes
The three parts on the right have similar specifications to SI1902CDL-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Number of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageFET TechnologyMax Junction Temperature (Tj)FET FeatureHeightREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeBase Part NumberPin CountDrain to Source Voltage (Vdss)Drain-source On Resistance-MaxSupplier Device PackageMax Operating TemperatureMin Operating TemperaturePower - MaxDrain to Source ResistanceRds On MaxNominal VgsAdditional FeatureDrain Current-Max (Abs) (ID)LengthWidthView Compare
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SI1902CDL-T1-GE314 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-363628.009329mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2016e3Active1 (Unlimited)6EAR99235mOhmMatte Tin (Sn)FET General Purpose Powers420mWGULL WING260302DualENHANCEMENT MODE300mW4 ns2 N-Channel (Dual)SWITCHING235m Ω @ 1A, 4.5V1.5V @ 250μA62pF @ 10V1.1A3nC @ 10V13ns9 ns11 ns1A1.5V12V20VMETAL-OXIDE SEMICONDUCTOR150°CLogic Level Gate1.1mmNo SVHCNoROHS3 CompliantLead Free----------------- -
14 WeeksSurface MountSurface Mount6-TSSOP, SC-88, SOT-36367.512624mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2008e3Active1 (Unlimited)6EAR99-Matte Tin (Sn)-270mWGULL WING--2DualENHANCEMENT MODE270mW10 ns2 N-Channel (Dual)-385m Ω @ 660mA, 4.5V1.5V @ 250μA--1.2nC @ 4.5V16ns10 ns10 ns660mA-12V-METAL-OXIDE SEMICONDUCTOR-Logic Level Gate--NoROHS3 Compliant-yesSI1902620V0.385Ohm-----------
-
-Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636---55°C~150°C TJTape & Reel (TR)TrenchFET®2008-Obsolete1 (Unlimited)--490mOhm--570mW---2Dual-570mW18 ns2 P-Channel (Dual)-490mOhm @ 880mA, 4.5V1V @ 100μA-880mA1.8nC @ 4.5V25ns25 ns15 ns-1A-450mV8V20V--Logic Level Gate-UnknownNoROHS3 CompliantLead Free-SI1913-20V-SC-70-6 (SOT-363)150°C-55°C570mW490mOhm490 mΩ-450 mV----
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-Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636-SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®-e3Obsolete1 (Unlimited)6EAR99280mOhmMatte Tin (Sn)FET General Purpose Powers570mWGULL WING260302DualENHANCEMENT MODE570mW45 ns2 N-Channel (Dual)SWITCHING280m Ω @ 1.13A, 4.5V450mV @ 100μA (Min)-1.13A1nC @ 4.5V85ns85 ns350 ns1.28A450mV12V20VMETAL-OXIDE SEMICONDUCTOR-Logic Level Gate900μmNo SVHCNoROHS3 CompliantLead FreeyesSI19126--------450 mVESD PROTECTION1.13A2.05mm1.25mm
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