Vishay Siliconix SI1905BDH-T1-E3
- Part Number:
- SI1905BDH-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 3069840-SI1905BDH-T1-E3
- Description:
- MOSFET 2P-CH 8V 0.63A SC70-6
- ECAD Model:
-
- Datasheet:
- SI1905BDH-T1-E3
Vishay Siliconix SI1905BDH-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1905BDH-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Supplier Device PackageSC-70-6 (SOT-363)
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2010
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Resistance542MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- Max Power Dissipation357mW
- Base Part NumberSI1905
- Number of Elements2
- Element ConfigurationDual
- Power Dissipation3.01W
- Turn On Delay Time9 ns
- Power - Max357mW
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs542mOhm @ 580mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds62pF @ 4V
- Current - Continuous Drain (Id) @ 25°C630mA
- Gate Charge (Qg) (Max) @ Vgs1.5nC @ 4.5V
- Rise Time40ns
- Drain to Source Voltage (Vdss)8V
- Fall Time (Typ)60 ns
- Turn-Off Delay Time50 ns
- Continuous Drain Current (ID)-630mA
- Threshold Voltage-1V
- Gate to Source Voltage (Vgs)8V
- Input Capacitance62pF
- FET FeatureLogic Level Gate
- Drain to Source Resistance542mOhm
- Rds On Max542 mΩ
- Nominal Vgs-1 V
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1905BDH-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1905BDH-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1905BDH-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1905BDH-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1905BDH-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1905BDH-T1-E3 More Descriptions
Trans MOSFET P-CH 8V 0.58A 6-Pin SC-70 T/R
DUAL P-CHANNEL 1.8-V (G-S) MOSFET
French Electronic Distributor since 1988
Transistor; Continuous Drain Current, Id:-630mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:301mW ;RoHS Compliant: Yes
DUAL P-CHANNEL 1.8-V (G-S) MOSFET
French Electronic Distributor since 1988
Transistor; Continuous Drain Current, Id:-630mA; Drain Source Voltage, Vds:-8V; On Resistance, Rds(on):1.2ohm; Rds(on) Test Voltage, Vgs:8V; Threshold Voltage, Vgs Typ:-1V; Power Dissipation, Pd:301mW ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI1905BDH-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)ResistanceMax Operating TemperatureMin Operating TemperatureMax Power DissipationBase Part NumberNumber of ElementsElement ConfigurationPower DissipationTurn On Delay TimePower - MaxFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Input CapacitanceFET FeatureDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodeNumber of TerminationsECCN CodeTerminal FinishSubcategoryTerminal FormPin CountOperating ModeTransistor ApplicationDrain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyPbfree CodePeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Additional FeatureHeightLengthWidthView Compare
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SI1905BDH-T1-E3Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SC-70-6 (SOT-363)-55°C~150°C TJTape & Reel (TR)TrenchFET®2010Obsolete1 (Unlimited)542MOhm150°C-55°C357mWSI19052Dual3.01W9 ns357mW2 P-Channel (Dual)542mOhm @ 580mA, 4.5V1V @ 250μA62pF @ 4V630mA1.5nC @ 4.5V40ns8V60 ns50 ns-630mA-1V8V62pFLogic Level Gate542mOhm542 mΩ-1 VUnknownNoROHS3 CompliantLead Free--------------------- -
Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636--55°C~150°C TJTape & Reel (TR)TrenchFET®2016Obsolete1 (Unlimited)490mOhm--570mWSI19132Dual740mW150 ns-2 P-Channel (Dual)490m Ω @ 880mA, 4.5V450mV @ 100μA-880mA1.8nC @ 4.5V480ns-850 ns840 ns-1A-450mV12V-Logic Level Gate---450 mVUnknownNoROHS3 CompliantLead FreeSILICONe36EAR99Matte Tin (Sn)Other TransistorsGULL WING6ENHANCEMENT MODESWITCHING0.88A20VMETAL-OXIDE SEMICONDUCTOR-------
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Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636--55°C~150°C TJTape & Reel (TR)TrenchFET®2013Obsolete1 (Unlimited)168mOhm--740mWSI19882Dual740mW8 ns1.25W2 N-Channel (Dual)168m Ω @ 1.4A, 4.5V1V @ 250μA110pF @ 10V-4.1nC @ 8V20ns20V20 ns15 ns1.3A1V8V-Logic Level Gate--1 VUnknownNoROHS3 CompliantLead FreeSILICONe36EAR99MATTE TINFET General Purpose PowerGULL WING6ENHANCEMENT MODESWITCHING-20VMETAL-OXIDE SEMICONDUCTORyes26040----
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Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636--55°C~150°C TJTape & Reel (TR)TrenchFET®-Obsolete1 (Unlimited)280mOhm--570mWSI19122Dual570mW45 ns-2 N-Channel (Dual)280m Ω @ 1.13A, 4.5V450mV @ 100μA (Min)-1.13A1nC @ 4.5V85ns-85 ns350 ns1.28A450mV12V-Logic Level Gate--450 mVNo SVHCNoROHS3 CompliantLead FreeSILICONe36EAR99Matte Tin (Sn)FET General Purpose PowersGULL WING6ENHANCEMENT MODESWITCHING1.13A20VMETAL-OXIDE SEMICONDUCTORyes26030ESD PROTECTION900μm2.05mm1.25mm
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