Vishay Siliconix SI1905DL-T1-E3
- Part Number:
- SI1905DL-T1-E3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2477844-SI1905DL-T1-E3
- Description:
- MOSFET 2P-CH 8V 0.57A SC70-6
- ECAD Model:
-
- Datasheet:
- SI1905DL-T1-E3
Vishay Siliconix SI1905DL-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1905DL-T1-E3.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case6-TSSOP, SC-88, SOT-363
- Number of Pins6
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations6
- ECCN CodeEAR99
- Resistance600mOhm
- Terminal FinishMATTE TIN
- Max Power Dissipation270mW
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)20
- Base Part NumberSI1905
- Pin Count6
- Number of Elements2
- Element ConfigurationDual
- Operating ModeENHANCEMENT MODE
- Power Dissipation270mW
- Turn On Delay Time6 ns
- FET Type2 P-Channel (Dual)
- Rds On (Max) @ Id, Vgs600m Ω @ 570mA, 4.5V
- Vgs(th) (Max) @ Id450mV @ 250μA (Min)
- Gate Charge (Qg) (Max) @ Vgs2.3nC @ 4.5V
- Rise Time25ns
- Fall Time (Typ)25 ns
- Turn-Off Delay Time10 ns
- Continuous Drain Current (ID)570mA
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)0.57A
- Drain to Source Breakdown Voltage8V
- FET TechnologyMETAL-OXIDE SEMICONDUCTOR
- FET FeatureLogic Level Gate
- Nominal Vgs-450 mV
- REACH SVHCUnknown
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1905DL-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1905DL-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1905DL-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1905DL-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1905DL-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1905DL-T1-E3 More Descriptions
MOSFET; Dual P-CH 1.8V (G-S) Trench | Siliconix / Vishay SI1905DL-T1-E3
Trans MOSFET P-CH 8V 0.57A 6-Pin SC-70 T/R
MOSFET Dual P-CH VDS 8V VGS 8V ID600mA
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.57A; On Resistance, Rds(on):0.6ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
Trans MOSFET P-CH 8V 0.57A 6-Pin SC-70 T/R
MOSFET Dual P-CH VDS 8V VGS 8V ID600mA
French Electronic Distributor since 1988
MOSFET; Transistor Type:MOSFET; Transistor Polarity:Dual P Channel; Drain Source Voltage, Vds:-8V; Continuous Drain Current, Id:0.57A; On Resistance, Rds(on):0.6ohm; Rds(on) Test Voltage, Vgs:-4.5V; Package/Case:6-SC-70 ;RoHS Compliant: Yes
The three parts on the right have similar specifications to SI1905DL-T1-E3.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishMax Power DissipationTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberPin CountNumber of ElementsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdGate Charge (Qg) (Max) @ VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageFET TechnologyFET FeatureNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackagePublishedMax Operating TemperatureMin Operating TemperaturePower - MaxCurrent - Continuous Drain (Id) @ 25°CDrain to Source Voltage (Vdss)Threshold VoltageDrain to Source ResistanceRds On MaxSubcategoryFeedback Cap-Max (Crss)TerminationTransistor ApplicationInput Capacitance (Ciss) (Max) @ VdsDual Supply VoltageView Compare
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SI1905DL-T1-E3Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)6EAR99600mOhmMATTE TIN270mWGULL WING26020SI190562DualENHANCEMENT MODE270mW6 ns2 P-Channel (Dual)600m Ω @ 570mA, 4.5V450mV @ 250μA (Min)2.3nC @ 4.5V25ns25 ns10 ns570mA8V0.57A8VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-450 mVUnknownNoROHS3 CompliantLead Free----------------- -
Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636--55°C~150°C TJTape & Reel (TR)TrenchFET®--Obsolete1 (Unlimited)--490mOhm-570mW---SI1913-2Dual-570mW18 ns2 P-Channel (Dual)490mOhm @ 880mA, 4.5V1V @ 100μA1.8nC @ 4.5V25ns25 ns15 ns-1A8V-20V-Logic Level Gate-450 mVUnknownNoROHS3 CompliantLead FreeSC-70-6 (SOT-363)2008150°C-55°C570mW880mA20V-450mV490mOhm490 mΩ------
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Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)6EAR99995mOhmMatte Tin (Sn)270mWGULL WING--SI190362DualENHANCEMENT MODE270mW7.5 ns2 P-Channel (Dual)995m Ω @ 410mA, 4.5V1.5V @ 250μA1.8nC @ 4.5V20ns20 ns8.5 ns440mA12V0.41A20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate-1.5 VNo SVHCNoROHS3 CompliantLead Free-----410mA--1.5V--Other Transistors888 pF----
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Surface MountSurface Mount6-TSSOP, SC-88, SOT-3636SILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®e3yesObsolete1 (Unlimited)6EAR99340mOhmMATTE TIN740mWGULL WING26040SI195862DualENHANCEMENT MODE740mW8 ns2 N-Channel (Dual)205m Ω @ 1.3A, 4.5V1.6V @ 250μA3.8nC @ 10V25ns25 ns10 ns1.3A12V-20VMETAL-OXIDE SEMICONDUCTORLogic Level Gate1.6 VNo SVHCNoROHS3 CompliantLead Free-2013--1.25W--1.6V--FET General Purpose Powers-SMD/SMTSWITCHING105pF @ 10V20V
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