Home > Products > Discrete Semiconductor Products > Transistors - FETs, MOSFETs - Arrays > SI1926DL-T1-E3
SI1926DL-T1-E3

Vishay Siliconix SI1926DL-T1-E3

Part Number:
SI1926DL-T1-E3
Manufacturer:
Vishay Siliconix
Ventron No:
3069668-SI1926DL-T1-E3
Description:
MOSFET 2N-CH 60V 0.37A SC-70-6
ECAD Model:
Datasheet:
SI1926DL-T1-E3

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
Vishay Siliconix SI1926DL-T1-E3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1926DL-T1-E3.
  • Factory Lead Time
    14 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    6-TSSOP, SC-88, SOT-363
  • Number of Pins
    6
  • Weight
    28.009329mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    TrenchFET®
  • Published
    2015
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    6
  • ECCN Code
    EAR99
  • Resistance
    1.4Ohm
  • Subcategory
    FET General Purpose Power
  • Max Power Dissipation
    510mW
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Base Part Number
    SI1926
  • Pin Count
    6
  • Number of Elements
    2
  • Element Configuration
    Dual
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    300mW
  • Turn On Delay Time
    6.5 ns
  • FET Type
    2 N-Channel (Dual)
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.4 Ω @ 340mA, 10V
  • Vgs(th) (Max) @ Id
    2.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    18.5pF @ 30V
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 10V
  • Rise Time
    12ns
  • Drain to Source Voltage (Vdss)
    60V
  • Fall Time (Typ)
    12 ns
  • Turn-Off Delay Time
    13 ns
  • Continuous Drain Current (ID)
    370mA
  • Threshold Voltage
    2.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.34A
  • Drain to Source Breakdown Voltage
    60V
  • FET Technology
    METAL-OXIDE SEMICONDUCTOR
  • FET Feature
    Logic Level Gate
  • Height
    1mm
  • Length
    2mm
  • Width
    1.25mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
SI1926DL-T1-E3 Overview
This product is manufactured by Vishay Siliconix and belongs to the category of Transistors - FETs, MOSFETs - Arrays. The images we provide are for reference only, for detailed product information please see specification sheet SI1926DL-T1-E3 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SI1926DL-T1-E3. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SI1926DL-T1-E3 More Descriptions
Si1926DL Series Dual N Channel 60 V 1.4 Ohm Surface Mount Power Mosfet - SOT-363
Transistor MOSFET Array Dual N-CH 60V 0.37A 6-Pin SC-70 T/R
Mosfet, Dual N Channel, 60V, 0.37A, Sot-363-6, Full Reel; Channel Type:Dual N Channel; Drain Source Voltage Vds N Channel:60V; Drain Source Voltage Vds P Channel:-; Continuous Drain Current Id N Channel:370Ma; No. Of Pins:6Pins Rohs Compliant: No |Vishay SI1926DL-T1-E3.
Product Comparison
The three parts on the right have similar specifications to SI1926DL-T1-E3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    FET Technology
    FET Feature
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Terminal Finish
    Drain-source On Resistance-Max
    Termination
    Power - Max
    Dual Supply Voltage
    Nominal Vgs
    View Compare
  • SI1926DL-T1-E3
    SI1926DL-T1-E3
    Vishay Siliconix
    14 Weeks
    Tin
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    28.009329mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2015
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    1.4Ohm
    FET General Purpose Power
    510mW
    GULL WING
    260
    40
    SI1926
    6
    2
    Dual
    ENHANCEMENT MODE
    300mW
    6.5 ns
    2 N-Channel (Dual)
    SWITCHING
    1.4 Ω @ 340mA, 10V
    2.5V @ 250μA
    18.5pF @ 30V
    1.4nC @ 10V
    12ns
    60V
    12 ns
    13 ns
    370mA
    2.5V
    20V
    0.34A
    60V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    1mm
    2mm
    1.25mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
  • SI1902DL-T1-GE3
    SI1902DL-T1-GE3
    Vishay Siliconix
    14 Weeks
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    7.512624mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2008
    e3
    yes
    Active
    1 (Unlimited)
    6
    EAR99
    -
    -
    270mW
    GULL WING
    -
    -
    SI1902
    6
    2
    Dual
    ENHANCEMENT MODE
    270mW
    10 ns
    2 N-Channel (Dual)
    -
    385m Ω @ 660mA, 4.5V
    1.5V @ 250μA
    -
    1.2nC @ 4.5V
    16ns
    20V
    10 ns
    10 ns
    660mA
    -
    12V
    -
    -
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    Matte Tin (Sn)
    0.385Ohm
    -
    -
    -
    -
    SI1926DL-T1-E3 vs SI1902DL-T1-GE3
  • SI1958DH-T1-E3
    SI1958DH-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    340mOhm
    FET General Purpose Powers
    740mW
    GULL WING
    260
    40
    SI1958
    6
    2
    Dual
    ENHANCEMENT MODE
    740mW
    8 ns
    2 N-Channel (Dual)
    SWITCHING
    205m Ω @ 1.3A, 4.5V
    1.6V @ 250μA
    105pF @ 10V
    3.8nC @ 10V
    25ns
    -
    25 ns
    10 ns
    1.3A
    1.6V
    12V
    -
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    MATTE TIN
    -
    SMD/SMT
    1.25W
    20V
    1.6 V
    SI1926DL-T1-E3 vs SI1958DH-T1-E3
  • SI1988DH-T1-E3
    SI1988DH-T1-E3
    Vishay Siliconix
    -
    -
    Surface Mount
    Surface Mount
    6-TSSOP, SC-88, SOT-363
    6
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    TrenchFET®
    2013
    e3
    yes
    Obsolete
    1 (Unlimited)
    6
    EAR99
    168mOhm
    FET General Purpose Power
    740mW
    GULL WING
    260
    40
    SI1988
    6
    2
    Dual
    ENHANCEMENT MODE
    740mW
    8 ns
    2 N-Channel (Dual)
    SWITCHING
    168m Ω @ 1.4A, 4.5V
    1V @ 250μA
    110pF @ 10V
    4.1nC @ 8V
    20ns
    20V
    20 ns
    15 ns
    1.3A
    1V
    8V
    -
    20V
    METAL-OXIDE SEMICONDUCTOR
    Logic Level Gate
    -
    -
    -
    Unknown
    No
    ROHS3 Compliant
    Lead Free
    MATTE TIN
    -
    -
    1.25W
    -
    1 V
    SI1926DL-T1-E3 vs SI1988DH-T1-E3
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for SI1926DL-T1-E3
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.