Vishay Siliconix SI1405DL-T1-E3

SI1405DL-T1-E3 Overview
This device's continuous drain current (ID) is 1.6A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 8V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 33 ns, which is the time to charge the device's input capacitance before drain current conduction begins.When a gate-to-source voltage (VGS) is applied to bias a MOSFET to the on state, the resistance between the drain and the source of the device is 210mOhm.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 8 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 8V volts.This transistor requires a 8V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).

SI1405DL-T1-E3 Features
a continuous drain current (ID) of 1.6A
a drain-to-source breakdown voltage of 8V voltage
the turn-off delay time is 33 ns
single MOSFETs transistor is 210mOhm
a 8V drain to source voltage (Vdss)


SI1405DL-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1405DL-T1-E3 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples