Vishay Siliconix SI1013X-T1-E3

SI1013X-T1-E3 Overview
The drain current is the maximum continuous current the device can conduct, and this device has -350mA continuous drain current (ID).A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 20V, and this device has a drainage-to-source breakdown voltage of 20VV.Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 35 ns.This device has a drain-to-source resistance of 1.2Ohm when a gate-to-source voltage (VGS) is applied to bias it into the on state, and when this voltage is applied to bias it into the on state.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 6V to 1.For this transistor to work, a voltage 20V is required between drain and source (Vdss).Using drive voltage (1.8V 4.5V), this device contributes to a reduction in overall power consumption.

SI1013X-T1-E3 Features
a continuous drain current (ID) of -350mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 35 ns
single MOSFETs transistor is 1.2Ohm
a 20V drain to source voltage (Vdss)


SI1013X-T1-E3 Applications
There are a lot of Vishay Siliconix
SI1013X-T1-E3 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies