Vishay Siliconix SI1013R-T1-GE3

SI1013R-T1-GE3 Overview
Its continuous drain current is -400mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 6V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -450mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (1.8V 4.5V) to reduce its overall power consumption.

SI1013R-T1-GE3 Features
a continuous drain current (ID) of -400mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -450mV
a 20V drain to source voltage (Vdss)


SI1013R-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1013R-T1-GE3 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters