Vishay Siliconix SI1012CR-T1-GE3
- Part Number:
- SI1012CR-T1-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 2848723-SI1012CR-T1-GE3
- Description:
- MOSFET N-CH 20V 0.63A SC-75A
- Datasheet:
- SI1012CR-T1-GE3
Vishay Siliconix SI1012CR-T1-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SI1012CR-T1-GE3.
- Factory Lead Time14 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSC-75, SOT-416
- Number of Pins3
- Weight2.012816mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchFET®
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance396mOhm
- Terminal FinishMatte Tin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count3
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max240mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation240mW
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs396m Ω @ 600mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds43pF @ 10V
- Gate Charge (Qg) (Max) @ Vgs2nC @ 8V
- Rise Time16ns
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time26 ns
- Continuous Drain Current (ID)630mA
- Threshold Voltage400mV
- Gate to Source Voltage (Vgs)8V
- Drain to Source Breakdown Voltage20V
- Max Junction Temperature (Tj)150°C
- Height800μm
- Length1.68mm
- Width860μm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SI1012CR-T1-GE3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 43pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 630mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 400mV threshold voltage. By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
SI1012CR-T1-GE3 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26 ns
a threshold voltage of 400mV
SI1012CR-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1012CR-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 43pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 630mA. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=20V. And this device has 20V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 26 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 400mV threshold voltage. By using drive voltage (1.5V 4.5V), this device helps reduce its overall power consumption.
SI1012CR-T1-GE3 Features
a continuous drain current (ID) of 630mA
a drain-to-source breakdown voltage of 20V voltage
the turn-off delay time is 26 ns
a threshold voltage of 400mV
SI1012CR-T1-GE3 Applications
There are a lot of Vishay Siliconix
SI1012CR-T1-GE3 applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
SI1012CR-T1-GE3 More Descriptions
MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous D
N-Channel 20 V 0.396 Ohm 0.24 W Surface Mount Mosfet - SC-75A
Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R / MOSFET N-CH 20V 0.63A SC-75A
MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:240mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-75A; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to 150°C
N-Channel 20 V 0.396 Ohm 0.24 W Surface Mount Mosfet - SC-75A
Trans MOSFET N-CH 20V 0.63A 3-Pin SC-75A T/R / MOSFET N-CH 20V 0.63A SC-75A
MOSFET, N CH, W/D, 20V, 0.5A, SC75A; Transistor Polarity:N Channel; Continuous Drain Current Id:630mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):0.33ohm; Rds(on) Test Voltage Vgs:4.5V; Power Dissipation Pd:240mW; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:SC-75A; No. of Pins:3; MSL:-; Operating Temperature Range:-55°C to 150°C
The three parts on the right have similar specifications to SI1012CR-T1-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageMax Junction Temperature (Tj)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeSupplier Device PackageMax Operating TemperatureMin Operating TemperatureDrain to Source Voltage (Vdss)Input CapacitanceDrain to Source ResistanceRds On MaxCurrent - Continuous Drain (Id) @ 25°CNominal VgsView Compare
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SI1012CR-T1-GE314 WeeksSurface MountSurface MountSC-75, SOT-41632.012816mgSILICON-55°C~150°C TJTape & Reel (TR)TrenchFET®2013e3yesActive1 (Unlimited)3EAR99396mOhmMatte Tin (Sn)MOSFET (Metal Oxide)DUALGULL WING311240mW TaSingleENHANCEMENT MODE240mW11 nsN-ChannelSWITCHING396m Ω @ 600mA, 4.5V1V @ 250μA43pF @ 10V2nC @ 8V16ns1.5V 4.5V±8V11 ns26 ns630mA400mV8V20V150°C800μm1.68mm860μmNo SVHCNoROHS3 CompliantLead Free----------
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-Surface MountSurface MountSOT-563, SOT-666632.006612mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2016--Obsolete1 (Unlimited)--156mOhm-MOSFET (Metal Oxide)---11236mW TaSingle--13 nsP-Channel-156mOhm @ 1.18A, 4.5V950mV @ 250μA480pF @ 6V10.8nC @ 5V27ns1.8V 4.5V±8V27 ns45 ns1.18A-8V-12V-600μm1.7mm1.2mm--ROHS3 CompliantLead FreeSC-89-6150°C-55°C12V480pF204mOhm156 mΩ--
-
-Surface MountSurface MountSOT-563, SOT-666632.006612mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2009--Obsolete1 (Unlimited)--130MOhm-MOSFET (Metal Oxide)----1236mW TaSingle-236mW13 nsP-Channel-156mOhm @ 1.18A, 4.5V950mV @ 250μA480pF @ 6V10.8nC @ 5V27ns1.8V 4.5V±8V27 ns45 ns1.18A-8V-12V-600μm1.7mm1.2mm--ROHS3 CompliantLead FreeSC-89-6150°C-55°C12V480pF204mOhm156 mΩ--
-
-Surface MountSurface MountSC-89, SOT-490329.993795mg--55°C~150°C TJTape & Reel (TR)TrenchFET®2008--Obsolete1 (Unlimited)--5Ohm-MOSFET (Metal Oxide)---11300mW TaSingle-340mW50 nsN-Channel-5Ohm @ 200mA, 4.5V1.2V @ 250μA-0.75nC @ 4.5V25ns1.5V 4.5V±6V25 ns50 ns200mA-6V20V-800μm1.7mm950μmUnknownNoROHS3 CompliantLead FreeSC-89-3150°C-55°C20V-5Ohm5 Ω200mA Ta700 mV
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