Fairchild/ON Semiconductor SGS10N60RUFDTU
- Part Number:
- SGS10N60RUFDTU
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 3587235-SGS10N60RUFDTU
- Description:
- IGBT 600V 16A 55W TO220F
- ECAD Model:
-
- Datasheet:
- SGS10N60RUFDTU
Fairchild/ON Semiconductor SGS10N60RUFDTU technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor SGS10N60RUFDTU.
- Lifecycle StatusACTIVE (Last Updated: 13 hours ago)
- Factory Lead Time11 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight2.27g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- Published2013
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- Additional FeatureLOW CONDUCTION LOSS, HIGH SPEED SWITCHING
- HTS Code8541.29.00.95
- SubcategoryInsulated Gate BIP Transistors
- Voltage - Rated DC600V
- Max Power Dissipation55W
- Current Rating10A
- Base Part NumberSG*10N60
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation55W
- Case ConnectionISOLATED
- Input TypeStandard
- Transistor ApplicationMOTOR CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current16A
- Reverse Recovery Time60ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.2V
- Turn On Time49 ns
- Test Condition300V, 10A, 20 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 10A
- Turn Off Time-Nom (toff)284 ns
- Gate Charge30nC
- Current - Collector Pulsed (Icm)30A
- Td (on/off) @ 25°C15ns/36ns
- Switching Energy141μJ (on), 215μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max8V
- Fall Time-Max (tf)220ns
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
SGS10N60RUFDTU Overview
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet SGS10N60RUFDTU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SGS10N60RUFDTU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Fairchild/ON Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet SGS10N60RUFDTU or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of SGS10N60RUFDTU. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
SGS10N60RUFDTU More Descriptions
Trans IGBT Chip N-CH 600V 16A 55000mW 3-Pin(3 Tab) TO-220FP Tube / IGBT 600V 16A 55W TO220F
IGBT, 600V, 10A, Short Circuit Rated
IGBT 600V 16A 55W Through Hole TO-220F
Transistor,igbt,n-Chan Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi SGS10N60RUFDTU
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V/10A/w/FRD
INSULATED GATE BIPOLAR TRANSISTO
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
IGBT, 600V, 10A, Short Circuit Rated
IGBT 600V 16A 55W Through Hole TO-220F
Transistor,igbt,n-Chan Diode,600V V(Br)Ces,16A I(C),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi SGS10N60RUFDTU
Insulated Gate Bipolar Transistor, 16A I(C), 600V V(BR)CES, N-Channel
IGBT Transistors 600V/10A/w/FRD
INSULATED GATE BIPOLAR TRANSISTO
Fairchild’s RUFD series of Insulated Gate Bipolar Transistors(IGBTs) provide low conduction and switching losses as well as short circuit ruggedness. The RUFD series is designed for applications such as motor control, UPS and general inverters where short circuit ruggedness is a required feature.
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