Rohm Semiconductor RTR020P02TL
- Part Number:
- RTR020P02TL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2478048-RTR020P02TL
- Description:
- MOSFET P-CH 20V 2A TSMT3
- ECAD Model:
-
- Datasheet:
- RTR020P02
Rohm Semiconductor RTR020P02TL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RTR020P02TL.
- Factory Lead Time15 Weeks
- Mounting TypeSurface Mount
- Package / CaseSC-96
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Silver/Copper (Sn96.5Ag3.0Cu0.5)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max1W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs135m Ω @ 2A, 4.5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds430pF @ 10V
- Current - Continuous Drain (Id) @ 25°C2A Ta
- Gate Charge (Qg) (Max) @ Vgs4.9nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Drain Current-Max (Abs) (ID)2A
- Drain-source On Resistance-Max0.15Ohm
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
RTR020P02TL Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 430pF @ 10V.A device's drain current is its maximum continuous current, and this device's drain current is 2A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
RTR020P02TL Features
a 20V drain to source voltage (Vdss)
RTR020P02TL Applications
There are a lot of ROHM Semiconductor
RTR020P02TL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 430pF @ 10V.A device's drain current is its maximum continuous current, and this device's drain current is 2A.In order to maintain normal operation, it is recommended to keep the DS breakdown voltage above 20V.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).
RTR020P02TL Features
a 20V drain to source voltage (Vdss)
RTR020P02TL Applications
There are a lot of ROHM Semiconductor
RTR020P02TL applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
RTR020P02TL More Descriptions
P-Channel 1 W -20 V 250 mO Surface Mount 2.5 V Drive MosFet - TSMT-3
Trans MOSFET P-CH Si 20V 2A 3-Pin TSMT T/R
MOSFET P CHANNEL; 20V 2A TSMT3; Transistor Polarity:P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSMT; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2A; Package / Case:TSMT3; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:4.5V
Trans MOSFET P-CH Si 20V 2A 3-Pin TSMT T/R
MOSFET P CHANNEL; 20V 2A TSMT3; Transistor Polarity:P Channel; Continuous Drain Current Id:2A; Drain Source Voltage Vds:-20V; On Resistance Rds(on):135mohm; Rds(on) Test Voltage Vgs:-4.5V; Threshold Voltage Vgs Typ:2V; Power Dissipation Pd:1W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TSMT; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:-2A; Package / Case:TSMT3; Power Dissipation Pd:1W; Termination Type:SMD; Transistor Type:Power MOSFET; Voltage Vds Typ:20V; Voltage Vgs Max:-12V; Voltage Vgs Rds on Measurement:4.5V
The three parts on the right have similar specifications to RTR020P02TL.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseSurface MountTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinRoHS StatusContact PlatingMountNumber of PinsTerminationResistanceVoltage - Rated DCCurrent RatingElement ConfigurationPower DissipationTurn On Delay TimeRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsREACH SVHCRadiation HardeningLead FreeHeightLengthWidthView Compare
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RTR020P02TL15 WeeksSurface MountSC-96YESSILICON150°C TJTape & Reel (TR)2004e1yesNot For New Designs1 (Unlimited)3EAR99Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260103R-PDSO-G3Not Qualified1SINGLE WITH BUILT-IN DIODE1W TaENHANCEMENT MODEP-ChannelSWITCHING135m Ω @ 2A, 4.5V2V @ 1mA430pF @ 10V2A Ta4.9nC @ 4.5V20V2.5V 4.5V±12V2A0.15Ohm20VROHS3 Compliant-------------------------- -
12 WeeksSurface MountSC-96-SILICON150°C TJTape & Reel (TR)2003e1yesNot For New Designs1 (Unlimited)3EAR99-Other TransistorsMOSFET (Metal Oxide)DUALGULL WING260103--1-1W TaENHANCEMENT MODEP-ChannelSWITCHING75m Ω @ 3A, 4.5V2V @ 1mA840pF @ 10V3A Ta9.3nC @ 4.5V20V2.5V 4.5V±12V3A--ROHS3 CompliantCopper, Silver, TinSurface Mount3SMD/SMT55MOhm-20V-3ASingle1W12 ns20ns20 ns50 ns3A-2V12V-20V-20V-2 VNo SVHCNoLead Free---
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20 WeeksSurface MountSC-96-SILICON150°C TJTape & Reel (TR)2009e1yesNot For New Designs1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260103--1-1W TaENHANCEMENT MODEN-ChannelSWITCHING130m Ω @ 2.5A, 4.5V1.5V @ 1mA250pF @ 10V2.5A Ta3.2nC @ 4.5V-2.5V 4.5V±12V---ROHS3 Compliant-Surface Mount3-130MOhm--Single1W9 ns15ns14 ns20 ns2.5A-12V45V---NoLead Free---
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21 WeeksSurface MountSC-96-SILICON150°C TJTape & Reel (TR)2009e1yesNot For New Designs1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALGULL WING260103--1-1W TaENHANCEMENT MODEN-ChannelSWITCHING67m Ω @ 3A, 4.5V1.5V @ 1mA510pF @ 10V3A Ta6.2nC @ 4.5V-2.5V 4.5V±12V3A0.095Ohm-ROHS3 Compliant-Surface Mount3----Single1W12 ns19ns26 ns34 ns3A-12V45V---NoLead Free900μm2.9mm1.6mm
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