Rohm Semiconductor RTM002P02T2L
- Part Number:
- RTM002P02T2L
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2483377-RTM002P02T2L
- Description:
- MOSFET P-CH 20V 0.2A VMT3
- Datasheet:
- RTM002P02
Rohm Semiconductor RTM002P02T2L technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RTM002P02T2L.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseSOT-723
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance1.5Ohm
- SubcategoryOther Transistors
- Voltage - Rated DC-20V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- Peak Reflow Temperature (Cel)260
- Current Rating-200mA
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count3
- Number of Elements1
- Power Dissipation-Max150mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation150mW
- Turn On Delay Time9 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.5 Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds50pF @ 10V
- Current - Continuous Drain (Id) @ 25°C200mA Ta
- Rise Time6ns
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)2.5V 4.5V
- Vgs (Max)±12V
- Fall Time (Typ)6 ns
- Turn-Off Delay Time35 ns
- Continuous Drain Current (ID)200mA
- Threshold Voltage-700mV
- Gate to Source Voltage (Vgs)12V
- Drain Current-Max (Abs) (ID)0.2A
- Drain to Source Breakdown Voltage-20V
- Nominal Vgs-700 mV
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
RTM002P02T2L Overview
A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -700mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
RTM002P02T2L Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
RTM002P02T2L Applications
There are a lot of ROHM Semiconductor
RTM002P02T2L applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 50pF @ 10V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 200mA for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=-20V, and this device has a drain-to-source breakdown voltage of -20V voltage.Its drain current is 0.2A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 35 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 12V.An electrical device's threshold voltage specifies when any of its operations will begin, and this transistor has a threshold voltage of -700mV.To operate this transistor, you need to apply a 20V drain to source voltage (Vdss).This device uses no drive voltage (2.5V 4.5V) to reduce its overall power consumption.
RTM002P02T2L Features
a continuous drain current (ID) of 200mA
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 35 ns
a threshold voltage of -700mV
a 20V drain to source voltage (Vdss)
RTM002P02T2L Applications
There are a lot of ROHM Semiconductor
RTM002P02T2L applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
RTM002P02T2L More Descriptions
P-Channel 0.15 W -20 V 1.5 Ohm Surface Mount Small Signal MosFet - VMT-3
Trans MOSFET P-CH Si 20V 0.2A 3-Pin VMT T/R
Compliant Surface Mount 6 ns Lead Free Cut Tape (CT) 6 ns No SVHC 1.5 Ω
null 200mA 1.5Ω@200mA,4.5V 150mW P Channel SOT-723 MOSFETs ROHS
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200Ma; On Resistance Rds(On):1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Small Signal Field-Effect Transistors
Trans MOSFET P-CH Si 20V 0.2A 3-Pin VMT T/R
Compliant Surface Mount 6 ns Lead Free Cut Tape (CT) 6 ns No SVHC 1.5 Ω
null 200mA 1.5Ω@200mA,4.5V 150mW P Channel SOT-723 MOSFETs ROHS
Transistor Polarity:p Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:200Ma; On Resistance Rds(On):1Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:4.5V; Threshold Voltage Vgs:700Mv Rohs Compliant: Yes
Small Signal Field-Effect Transistors
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