Rohm Semiconductor RSS125N03TB
- Part Number:
- RSS125N03TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3586662-RSS125N03TB
- Description:
- MOSFET N-CH 30V 12.5A 8-SOIC
- Datasheet:
- RSS125N03
Rohm Semiconductor RSS125N03TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RSS125N03TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- JESD-609 Codee2
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations8
- ECCN CodeEAR99
- Terminal FinishTIN COPPER
- SubcategoryFET General Purpose Power
- Voltage - Rated DC30V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating12.5A
- Time@Peak Reflow Temperature-Max (s)10
- Pin Count8
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max2W Ta
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs8.9m Ω @ 12.5A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds1670pF @ 10V
- Current - Continuous Drain (Id) @ 25°C12.5A Ta
- Gate Charge (Qg) (Max) @ Vgs28nC @ 5V
- Rise Time17ns
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)20V
- Continuous Drain Current (ID)12.5A
- Drain-source On Resistance-Max0.0131Ohm
- Pulsed Drain Current-Max (IDM)50A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
RSS125N03TB Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1670pF @ 10V.This device has a continuous drain current (ID) of [12.5A], which is its maximum continuous current.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (4V 10V).
RSS125N03TB Features
a continuous drain current (ID) of 12.5A
based on its rated peak drain current 50A.
RSS125N03TB Applications
There are a lot of ROHM Semiconductor
RSS125N03TB applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1670pF @ 10V.This device has a continuous drain current (ID) of [12.5A], which is its maximum continuous current.A maximum pulsed drain current of 50A is the maximum peak drain current rated for this device.Its overall power consumption can be reduced by using drive voltage (4V 10V).
RSS125N03TB Features
a continuous drain current (ID) of 12.5A
based on its rated peak drain current 50A.
RSS125N03TB Applications
There are a lot of ROHM Semiconductor
RSS125N03TB applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
RSS125N03TB More Descriptions
MOSFET N-CH 30V 12.5A 8-SOIC
N-CH 30V 12A 9mOhm SO-8 RoHSconf
OEMs, CMs ONLY (NO BROKERS)
N-CH 30V 12A 9mOhm SO-8 RoHSconf
OEMs, CMs ONLY (NO BROKERS)
The three parts on the right have similar specifications to RSS125N03TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)RoHS StatusLead FreeSupplier Device PackageDrain to Source Voltage (Vdss)Input CapacitanceRds On MaxTerminationResistancePower DissipationTurn On Delay TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageNominal VgsREACH SVHCRadiation HardeningView Compare
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RSS125N03TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8SILICON150°C TJTape & Reel (TR)2004e2yesActive1 (Unlimited)8EAR99TIN COPPERFET General Purpose Power30VMOSFET (Metal Oxide)DUALGULL WING26012.5A108Not Qualified1SINGLE WITH BUILT-IN DIODE2W TaENHANCEMENT MODEN-ChannelSWITCHING8.9m Ω @ 12.5A, 10V2.5V @ 1mA1670pF @ 10V12.5A Ta28nC @ 5V17ns4V 10V20V12.5A0.0131Ohm50AROHS3 CompliantLead Free-----------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-150°C TJTape & Reel (TR)2004--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------2W Ta-N-Channel-11.7mOhm @ 10.5A, 10V2.5V @ 1mA1130pF @ 10V10.5A Ta15nC @ 5V-4V 10V20V10.5A--ROHS3 Compliant-8-SOP30V1.13nF11.7 mΩ------------
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-Surface Mount8-SOIC (0.154, 3.90mm Width)--150°C TJTape & Reel (TR)2004--Obsolete1 (Unlimited)-----MOSFET (Metal Oxide)---------2W Ta-N-Channel-10mOhm @ 12A, 10V2.5V @ 1mA1360pF @ 10V12A Ta25nC @ 5V-4V 10V20V---ROHS3 Compliant-8-SOP30V--------------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8-150°C TJTape & Reel (TR)2004-yesObsolete1 (Unlimited)-EAR99-FET General Purpose Power-MOSFET (Metal Oxide)--------Single2W Ta-N-Channel-8.1m Ω @ 13A, 10V2.5V @ 1mA2000pF @ 10V13A Ta35nC @ 5V30ns4V 10V-13A--ROHS3 CompliantLead Free----SMD/SMT11.1MOhm2W13 ns55 ns88 ns20V30V30V2.5 VNo SVHCNo
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