Rohm Semiconductor RSS040P03FU6TB
- Part Number:
- RSS040P03FU6TB
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 2850365-RSS040P03FU6TB
- Description:
- MOSFET P-CH 30V 4A 8SOIC
- Datasheet:
- RSS040P03
Rohm Semiconductor RSS040P03FU6TB technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RSS040P03FU6TB.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-SOIC (0.154, 3.90mm Width)
- Number of Pins8
- Supplier Device Package8-SOP
- Operating Temperature150°C TJ
- PackagingTape & Reel (TR)
- Published2004
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- TerminationSMD/SMT
- Resistance106MOhm
- Max Operating Temperature150°C
- Min Operating Temperature-55°C
- TechnologyMOSFET (Metal Oxide)
- Power Dissipation-Max2W Ta
- Power Dissipation2W
- Turn On Delay Time12 ns
- FET TypeP-Channel
- Rds On (Max) @ Id, Vgs58mOhm @ 4A, 10V
- Vgs(th) (Max) @ Id2.5V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds800pF @ 10V
- Current - Continuous Drain (Id) @ 25°C4A Ta
- Gate Charge (Qg) (Max) @ Vgs8nC @ 5V
- Rise Time25ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4V 10V
- Vgs (Max)±20V
- Fall Time (Typ)15 ns
- Turn-Off Delay Time45 ns
- Continuous Drain Current (ID)4A
- Threshold Voltage-2.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-30V
- Dual Supply Voltage-30V
- Input Capacitance800pF
- Drain to Source Resistance58mOhm
- Rds On Max58 mΩ
- Nominal Vgs-2.5 V
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
RSS040P03FU6TB Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 800pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 58mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-2.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RSS040P03FU6TB Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 58mOhm
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS040P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS040P03FU6TB applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 800pF @ 10V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 4A.With a drain-source breakdown voltage of -30V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of -30V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 45 ns.When a specific gate-to-source voltage (VGS) is applied to bias a MOSFET into the on state, a drain-to-source resistance of 58mOhm exists between the drain and source.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 12 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.-2.5V is the threshold voltage at which an electrical device activates any of its operations.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4V 10V) reduces this device's overall power consumption.
RSS040P03FU6TB Features
a continuous drain current (ID) of 4A
a drain-to-source breakdown voltage of -30V voltage
the turn-off delay time is 45 ns
single MOSFETs transistor is 58mOhm
a threshold voltage of -2.5V
a 30V drain to source voltage (Vdss)
RSS040P03FU6TB Applications
There are a lot of ROHM Semiconductor
RSS040P03FU6TB applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
RSS040P03FU6TB More Descriptions
P-Channel 2 W -30 V 106 mOhm Surface Mount 4 V Drive MosFet - SOIC-8
Trans MOSFET P-CH 30V 4A 8-Pin SOP T/R
French Electronic Distributor since 1988
MOSFET, P, 30V, 4A; Transistor Polarity: P Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Pulse Current Idm: 20A; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: -2.5V; Voltage Vgs th Min: -1V
Trans MOSFET P-CH 30V 4A 8-Pin SOP T/R
French Electronic Distributor since 1988
MOSFET, P, 30V, 4A; Transistor Polarity: P Channel; Continuous Drain Current Id: 5A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.077ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -2.5V; Power Dissipation Pd: 2W; Transistor Case Style: SOP; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Pulse Current Idm: 20A; Termination Type: Surface Mount Device; Transistor Type: Enhancement; Voltage Vds Typ: -30V; Voltage Vgs Rds on Measurement: 4V; Voltage Vgs th Max: -2.5V; Voltage Vgs th Min: -1V
The three parts on the right have similar specifications to RSS040P03FU6TB.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseNumber of PinsSupplier Device PackageOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)TerminationResistanceMax Operating TemperatureMin Operating TemperatureTechnologyPower Dissipation-MaxPower DissipationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageDual Supply VoltageInput CapacitanceDrain to Source ResistanceRds On MaxNominal VgsREACH SVHCRadiation HardeningRoHS StatusLead FreePbfree CodeECCN CodeSubcategoryConfigurationOperating ModeDrain Current-Max (Abs) (ID)View Compare
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RSS040P03FU6TBSurface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SOP150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMT106MOhm150°C-55°CMOSFET (Metal Oxide)2W Ta2W12 nsP-Channel58mOhm @ 4A, 10V2.5V @ 1mA800pF @ 10V4A Ta8nC @ 5V25ns30V4V 10V±20V15 ns45 ns4A-2.5V20V-30V-30V800pF58mOhm58 mΩ-2.5 VNo SVHCNoROHS3 CompliantLead Free-------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)88-SOP150°C TJTape & Reel (TR)2004Obsolete1 (Unlimited)SMD/SMT-150°C-55°CMOSFET (Metal Oxide)2W Ta2W20 nsP-Channel21mOhm @ 7.5A, 10V2.5V @ 1mA2900pF @ 10V7.5A Ta30nC @ 5V35ns30V4V 10V±20V90 ns85 ns7.5A-2.5V20V-30V-30V2.9nF21mOhm21 mΩ-2.5 VNo SVHCNoROHS3 CompliantLead Free------
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Surface MountSurface Mount8-SOIC (0.154, 3.90mm Width)8--Tape & Reel (TR)2006Obsolete1 (Unlimited)--150°C-MOSFET (Metal Oxide)2W Ta--P-Channel27m Ω @ 7A, 10V-4100pF @ 10V7A Ta47.6nC @ 5V-45V4V 10V±20V--7A-2.5V-------No SVHC-ROHS3 Compliant-yesEAR99Other TransistorsSingleENHANCEMENT MODE7A
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-Surface Mount8-SOIC (0.154, 3.90mm Width)--150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)----MOSFET (Metal Oxide)2W Ta--P-Channel14m Ω @ 9A, 10V2.5V @ 1mA4000pF @ 10V9A Ta39nC @ 5V-30V4V 10V±20V-------------ROHS3 CompliantLead Free------
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