RJP6085DPN-00#T2

Renesas Electronics America RJP6085DPN-00#T2

Part Number:
RJP6085DPN-00#T2
Manufacturer:
Renesas Electronics America
Ventron No:
3587197-RJP6085DPN-00#T2
Description:
IGBT 600V 40A 178.5W TO-220AB
ECAD Model:
Datasheet:
RJP6085DPN-00#T2

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Specifications
Renesas Electronics America RJP6085DPN-00#T2 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJP6085DPN-00#T2.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    150°C TJ
  • Packaging
    Tube
  • Published
    2009
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Max Power Dissipation
    178.5W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    4
  • Input Type
    Standard
  • Turn On Delay Time
    30 ns
  • Power - Max
    178.5W
  • Turn-Off Delay Time
    60 ns
  • Collector Emitter Voltage (VCEO)
    3.5V
  • Max Collector Current
    40A
  • Collector Emitter Breakdown Voltage
    600V
  • Vce(on) (Max) @ Vge, Ic
    3.5V @ 15V, 40A
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
RJP6085DPN-00#T2 Overview
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJP6085DPN-00#T2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJP6085DPN-00#T2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RJP6085DPN-00#T2 More Descriptions
Trans IGBT Chip N-CH 600V 40A 3-Pin TO-220AB Tube
IGBT 600V 40A 178.5W Through Hole TO-220AB
Insulated-Gate Bipolar Transistors (IGBT)
IGBT Transistors Power Module - Lead Free
CoC and 2-years warranty / RFQ for pricing
Product Comparison
The three parts on the right have similar specifications to RJP6085DPN-00#T2.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Input Type
    Turn On Delay Time
    Power - Max
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Vce(on) (Max) @ Vge, Ic
    RoHS Status
    Lead Free
    Pbfree Code
    ECCN Code
    Subcategory
    Polarity/Channel Type
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Base Part Number
    Test Condition
    IGBT Type
    Td (on/off) @ 25°C
    Number of Pins
    Element Configuration
    View Compare
  • RJP6085DPN-00#T2
    RJP6085DPN-00#T2
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    178.5W
    NOT SPECIFIED
    NOT SPECIFIED
    4
    Standard
    30 ns
    178.5W
    60 ns
    3.5V
    40A
    600V
    3.5V @ 15V, 40A
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • RJP6085DPK-00#T0
    16 Weeks
    Through Hole
    Through Hole
    TO-3P-3, SC-65-3
    150°C TJ
    Tube
    2009
    Obsolete
    1 (Unlimited)
    178.5W
    NOT SPECIFIED
    NOT SPECIFIED
    4
    Standard
    30 ns
    178.5W
    60 ns
    3.5V
    40A
    600V
    3.5V @ 15V, 40A
    ROHS3 Compliant
    Lead Free
    yes
    EAR99
    Insulated Gate BIP Transistors
    N-CHANNEL
    30V
    6V
    -
    -
    -
    -
    -
    -
  • RJP60F0DPE-00#J3
    16 Weeks
    Surface Mount
    Surface Mount
    SC-83
    150°C TJ
    Tape & Reel (TR)
    2011
    Obsolete
    1 (Unlimited)
    122W
    NOT SPECIFIED
    NOT SPECIFIED
    4
    Standard
    -
    122W
    -
    1.82V
    50A
    600V
    1.82V @ 15V, 25A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    RJP60F
    400V, 30A, 5 Ω, 15V
    Trench
    46ns/70ns
    -
    -
  • RJP60F4DPM-00#T1
    16 Weeks
    Through Hole
    Through Hole
    TO-3PFM, SC-93-3
    150°C TJ
    Tube
    2011
    Active
    1 (Unlimited)
    41.2W
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Standard
    -
    41.2W
    -
    1.82V
    60A
    600V
    1.82V @ 15V, 30A
    ROHS3 Compliant
    -
    yes
    EAR99
    Insulated Gate BIP Transistors
    N-CHANNEL
    -
    -
    RJP60F
    400V, 30A, 5 Ω, 15V
    Trench
    45ns/70ns
    3
    Single
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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