Renesas Electronics America RJK6018DPM-00#T1
- Part Number:
- RJK6018DPM-00#T1
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 4538987-RJK6018DPM-00#T1
- Description:
- MOSFET N-CH 600V 30A TO3PFM
- ECAD Model:
-
- Datasheet:
- RJK6018DPM-00#T1
Renesas Electronics America RJK6018DPM-00#T1 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJK6018DPM-00#T1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3PFM, SC-93-3
- Operating Temperature150°C TJ
- PackagingTube
- Published2012
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- ConfigurationSingle
- Power Dissipation-Max60W Tc
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs235m Ω @ 15A, 10V
- Input Capacitance (Ciss) (Max) @ Vds4100pF @ 25V
- Current - Continuous Drain (Id) @ 25°C30A Ta
- Gate Charge (Qg) (Max) @ Vgs92nC @ 10V
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Continuous Drain Current (ID)30A
- RoHS StatusROHS3 Compliant
RJK6018DPM-00#T1 Overview
The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RJK6018DPM-00#T1 Features
a continuous drain current (ID) of 30A
a 600V drain to source voltage (Vdss)
RJK6018DPM-00#T1 Applications
There are a lot of Renesas Electronics America
RJK6018DPM-00#T1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 4100pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 30A.The drain-to-source voltage (Vdss) of this transistor needs to be at 600V in order to operate.Using drive voltage (10V), this device helps reduce its power consumption.
RJK6018DPM-00#T1 Features
a continuous drain current (ID) of 30A
a 600V drain to source voltage (Vdss)
RJK6018DPM-00#T1 Applications
There are a lot of Renesas Electronics America
RJK6018DPM-00#T1 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
RJK6018DPM-00#T1 More Descriptions
Nch Single Power Mosfet 600V 30A 235Mohm To-3Pfm
30 A 600 V 0.235 ohm N-CHANNEL Si POWER MOSFET
N-CH 600V 30A 200mOhm TO-3PFM RoHSconf
Compliant Through Hole 235 mΩ 4.1 nF 60 W 30 A 600 V
30 A 600 V 0.235 ohm N-CHANNEL Si POWER MOSFET
N-CH 600V 30A 200mOhm TO-3PFM RoHSconf
Compliant Through Hole 235 mΩ 4.1 nF 60 W 30 A 600 V
The three parts on the right have similar specifications to RJK6018DPM-00#T1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)SubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountConfigurationPower Dissipation-MaxFET TypeRds On (Max) @ Id, VgsInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusNumber of PinsLead FreeECCN CodeTurn On Delay TimeTurn-Off Delay TimeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)View Compare
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RJK6018DPM-00#T116 WeeksThrough HoleThrough HoleTO-3PFM, SC-93-3150°C TJTube2012yesActive1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Single60W TcN-Channel235m Ω @ 15A, 10V4100pF @ 25V30A Ta92nC @ 10V600V10V±30V30AROHS3 Compliant-------- -
16 WeeksSurface MountSurface MountSC-83150°C TJTape & Reel (TR)2011-Active1 (Unlimited)-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED4-100W TcN-Channel920m Ω @ 5A, 10V1100pF @ 25V10A Ta30nC @ 10V600V10V±30V10AROHS3 Compliant83Lead Free-----
-
16 WeeksSurface MountThrough HoleTO-3P-3, SC-65-3150°C TJTube2007yesActive1 (Unlimited)-MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED4-150W TcN-Channel360m Ω @ 10.5A, 10V2600pF @ 25V21A Ta67nC @ 10V600V10V±30V21AROHS3 Compliant3Lead Free-----
-
16 WeeksSurface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63150°C TJTape & Reel (TR)2012-Obsolete1 (Unlimited)FET General Purpose PowerMOSFET (Metal Oxide)---Single40.3W TcN-Channel4.3 Ω @ 1.5A, 10V285pF @ 25V3A Ta9nC @ 10V600V10V±30V3AROHS3 Compliant3-EAR9913 ns22 ns30V3A
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