Rohm Semiconductor RGT8NS65DGTL
- Part Number:
- RGT8NS65DGTL
- Manufacturer:
- Rohm Semiconductor
- Ventron No:
- 3072183-RGT8NS65DGTL
- Description:
- IGBT 650V 8A 65W TO-263S
- ECAD Model:
-
- Datasheet:
- RGT8NS65DGTL
Rohm Semiconductor RGT8NS65DGTL technical specifications, attributes, parameters and parts with similar specifications to Rohm Semiconductor RGT8NS65DGTL.
- Factory Lead Time17 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-263-3, D2Pak (2 Leads Tab), TO-263AB
- Number of Pins3
- Weight1.946308g
- Transistor Element MaterialSILICON
- Operating Temperature-40°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2014
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Max Power Dissipation65W
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Power - Max65W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)650V
- Max Collector Current8A
- Reverse Recovery Time40 ns
- Collector Emitter Breakdown Voltage650V
- Collector Emitter Saturation Voltage1.65V
- Max Breakdown Voltage650V
- Turn On Time54 ns
- Test Condition400V, 4A, 50 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 4A
- Continuous Collector Current4A
- Turn Off Time-Nom (toff)158 ns
- IGBT TypeTrench Field Stop
- Gate Charge13.5nC
- Current - Collector Pulsed (Icm)12A
- Td (on/off) @ 25°C17ns/69ns
- REACH SVHCUnknown
- RoHS StatusROHS3 Compliant
RGT8NS65DGTL Overview
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGT8NS65DGTL or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGT8NS65DGTL. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Rohm Semiconductor and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RGT8NS65DGTL or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RGT8NS65DGTL. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RGT8NS65DGTL More Descriptions
Trans IGBT Chip N-CH 650V 8A 65000mW 3-Pin(2 Tab) LPDS T/R
Igbt, Single, 650V, 8A, To-263S-3; Dc Collector Current:8A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-263S; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGT8NS65DGTL
IGBT TRENCH FIELD 650V 8A LPDS
Igbt, Single, 650V, 8A, To-263S-3; Dc Collector Current:8A; Collector Emitter Saturation Voltage Vce(On):1.65V; Power Dissipation Pd:65W; Collector Emitter Voltage V(Br)Ceo:650V; Transistor Case Style:To-263S; No. Of Pins:3Pins; Rohs Compliant: Yes |Rohm RGT8NS65DGTL
IGBT TRENCH FIELD 650V 8A LPDS
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