Fairchild/ON Semiconductor RFP70N06

Name: RFP70N06
Brand: Fairchild/ON Semiconductor
SKU: 2478389-RFP70N06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: RFP70N06

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2478389-RFP70N06

Description:: MOSFET N-CH 60V 70A TO-220AB

ECAD Model:

Datasheet:: TO220B03 Pkg Drawing

Part Pictures

Specifications

Fairchild/ON Semiconductor RFP70N06 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFP70N06.

Lifecycle Status
ACTIVE (Last Updated: 1 day ago)
Factory Lead Time
9 Weeks
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
1.8g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
14mOhm
Subcategory
FET General Purpose Power
Voltage - Rated DC
60V
Technology
MOSFET (Metal Oxide)
Current Rating
70A
Number of Elements
1
Number of Channels
1
Power Dissipation-Max
150W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
150W
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
14m Ω @ 70A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C
70A Tc
Gate Charge (Qg) (Max) @ Vgs
156nC @ 20V
Rise Time
137ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
24 ns
Turn-Off Delay Time
32 ns
Continuous Drain Current (ID)
70A
Threshold Voltage
4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
60V
Height
9.4mm
Length
10.67mm
Width
4.83mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

RFP70N06 Description RFP70N06 N-Channel MOSFET is to be used in a variety of applications. RFP70N06 MOSFET is ideal for reducing resistance to on-state and offering better switching performance. RFP70N06 ON Semiconductor is designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. RFP70N06 Features rDS(ON)= 0.014Ω Temperature Compensating Model Peak Current vs Pulse Width Curve UIS Rating Curve 175°C Operating Temperature RFP70N06 Applications Switching regulators Switching converters Motor drivers Relay drivers

RFP70N06 More Descriptions

Transistor RFP70N06 N-Channel MOSFET 60 Volt 70 Amp TO-220AB
N-Channel 60 V 0.014 Ohm Flange Mount Power Mosfet - TO-220AB
N-Channel Power MOSFET 60V, 70A, 14mΩ
Power Field-Effect Transistor, 70A I(D), 60V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
These are N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI circuits, gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers and relay drivers. These transistors can be operated directly from integrated circuits. Formerly developmental type TA78440.
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:70A; Drain Source Voltage Vds:60V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:70A; Current Temperature:25°C; Device Marking:RFP70N06; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Pulse Current Idm:180A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V