RFG40N10

Fairchild/ON Semiconductor RFG40N10

Part Number:
RFG40N10
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2489927-RFG40N10
Description:
MOSFET N-CH 100V 40A TO-247
ECAD Model:
Datasheet:
RFG40N10, RFP40N10, RF1S40N10/SM

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Specifications
Fairchild/ON Semiconductor RFG40N10 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor RFG40N10.
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Supplier Device Package
    TO-247-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Published
    2002
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Technology
    MOSFET (Metal Oxide)
  • Power Dissipation-Max
    160W Tc
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    40mOhm @ 40A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Current - Continuous Drain (Id) @ 25°C
    40A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    300nC @ 20V
  • Drain to Source Voltage (Vdss)
    100V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
Description
RFG40N10 Description
RFG40N10 N-Channel power MOSFETs manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance. They were designed for use in applications such as switching regulators, switching converters, motor drivers, relay drivers and emitter switches for bipolar transistors. These transistors can be operated directly from integrated circuits.

RFG40N10 Features
40A, 100V
UIS Rating Curve
rDS(ON) = 0.040?
175oC Operating Temperature
SOA is Power Dissipation Limited
Related Literature- TB334 ?°Guidelines for Soldering Surface Mount Components to PC Boards?±

RFG40N10 Applications
Industrial
Personal electronics
Communications equipment
RFG40N10 More Descriptions
Non-RoHS Compliant Mosfet Transistor
MOSFET N-CH 100V 40A TO247-3
MOSFETs N-Ch MOS 100V/40a
MISCELLANEOUS MOSFETS;
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:100V; Continuous Drain Current, Id:40A; On-Resistance, Rds(on):40mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-247; Leaded Process Compatible:Yes RoHS Compliant: Yes
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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