Nexperia USA Inc. PMZB320UPEYL
- Part Number:
- PMZB320UPEYL
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2480111-PMZB320UPEYL
- Description:
- MOSFET P-CH 30V SOT883
- Datasheet:
- PMZB320UPEYL
Nexperia USA Inc. PMZB320UPEYL technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMZB320UPEYL.
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case3-XFDFN
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingCut Tape (CT)
- Published2015
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionBOTTOM
- Terminal FormNO LEAD
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max350mW Ta 6.25W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time3 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs510m Ω @ 1A, 4.5V
- Vgs(th) (Max) @ Id950mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds122pF @ 15V
- Current - Continuous Drain (Id) @ 25°C1A Ta
- Gate Charge (Qg) (Max) @ Vgs1.4nC @ 4.5V
- Rise Time6ns
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)1.5V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)5 ns
- Turn-Off Delay Time22 ns
- Continuous Drain Current (ID)1A
- Gate to Source Voltage (Vgs)8V
- Drain Current-Max (Abs) (ID)1A
- Drain-source On Resistance-Max0.51Ohm
- RoHS StatusROHS3 Compliant
PMZB320UPEYL Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 122pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (1.5V 4.5V) reduces this device's overall power consumption.
PMZB320UPEYL Features
a continuous drain current (ID) of 1A
the turn-off delay time is 22 ns
a 30V drain to source voltage (Vdss)
PMZB320UPEYL Applications
There are a lot of Nexperia USA Inc.
PMZB320UPEYL applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 122pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (1.5V 4.5V) reduces this device's overall power consumption.
PMZB320UPEYL Features
a continuous drain current (ID) of 1A
the turn-off delay time is 22 ns
a 30V drain to source voltage (Vdss)
PMZB320UPEYL Applications
There are a lot of Nexperia USA Inc.
PMZB320UPEYL applications of single MOSFETs transistors.
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
PMZB320UPEYL More Descriptions
PMZB320UPE - 30 V, P-channel Trench MOSFET
Mosfet Transistor, P Channel, -1 A, -30 V, 0.43 Ohm, -4.5 V, -700 Mv Rohs Compliant: Yes |Nexperia PMZB320UPEYL
Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R
LDO Regulator Pos 1.23V to 29V 0.25A 16-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, -30V, -1A, SOT-883B-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
PMZB320UPE/XQFN3/REEL 7" Q1/T1
REEL 7"" Q1/T1 *STANDARD MARK SMD PITCH2MM
Mosfet Transistor, P Channel, -1 A, -30 V, 0.43 Ohm, -4.5 V, -700 Mv Rohs Compliant: Yes |Nexperia PMZB320UPEYL
Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R
LDO Regulator Pos 1.23V to 29V 0.25A 16-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, -30V, -1A, SOT-883B-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
PMZB320UPE/XQFN3/REEL 7" Q1/T1
REEL 7"" Q1/T1 *STANDARD MARK SMD PITCH2MM
The three parts on the right have similar specifications to PMZB320UPEYL.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionTerminal FormPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxRoHS StatusSurface MountJESD-609 CodeTerminal FinishMax Dual Supply VoltageRadiation HardeningDS Breakdown Voltage-MinSupplier Device PackageMax Operating TemperatureMin Operating TemperatureInput CapacitanceDrain to Source ResistanceRds On MaxView Compare
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PMZB320UPEYL8 WeeksTinSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJCut Tape (CT)2015Active1 (Unlimited)3MOSFET (Metal Oxide)BOTTOMNO LEAD31SINGLE WITH BUILT-IN DIODE350mW Ta 6.25W TcENHANCEMENT MODEDRAIN3 nsP-ChannelSWITCHING510m Ω @ 1A, 4.5V950mV @ 250μA122pF @ 15V1A Ta1.4nC @ 4.5V6ns30V1.5V 4.5V±8V5 ns22 ns1A8V1A0.51OhmROHS3 Compliant-------------
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8 Weeks--Surface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2012Active1 (Unlimited)3MOSFET (Metal Oxide)BOTTOM-31SINGLE WITH BUILT-IN DIODE360mW Ta 2.7W TcENHANCEMENT MODEDRAIN4.5 nsN-ChannelSWITCHING380m Ω @ 500mA, 4.5V950mV @ 250μA83pF @ 10V1A Ta0.68nC @ 4.5V10ns-1.8V 4.5V±8V5 ns18.5 ns1A8V1A-ROHS3 CompliantYESe3Tin (Sn)20VNo-------
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8 WeeksTinSurface MountSurface Mount3-XFDFN3SILICON-55°C~150°C TJTape & Reel (TR)2015Active1 (Unlimited)3MOSFET (Metal Oxide)BOTTOMNO LEAD31SINGLE WITH BUILT-IN DIODE350mW Ta 5.43W TcENHANCEMENT MODEDRAIN6 nsN-ChannelSWITCHING320m Ω @ 1.2A, 4.5V950mV @ 250μA46pF @ 10V1.2A Ta1.4nC @ 4.5V10ns20V1.5V 4.5V±8V4 ns11 ns1.2A8V--ROHS3 Compliant-----20V------
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8 Weeks-Surface MountSurface Mount3-XFDFN3--55°C~150°C TJCut Tape (CT)2015Active1 (Unlimited)-MOSFET (Metal Oxide)-----350mW Ta 6.25W Tc---N-Channel-200mOhm @ 1.5A, 4.5V950mV @ 250μA93pF @ 10V1.5A Ta1.6nC @ 4.5V-20V1.5V 4.5V±8V--1.5A---ROHS3 Compliant------DFN1006B-3150°C-55°C93pF170mOhm200 mΩ
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