PMZB320UPEYL

Nexperia USA Inc. PMZB320UPEYL

Part Number:
PMZB320UPEYL
Manufacturer:
Nexperia USA Inc.
Ventron No:
2480111-PMZB320UPEYL
Description:
MOSFET P-CH 30V SOT883
ECAD Model:
Datasheet:
PMZB320UPEYL

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Specifications
Nexperia USA Inc. PMZB320UPEYL technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMZB320UPEYL.
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XFDFN
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2015
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    NO LEAD
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    350mW Ta 6.25W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    3 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    510m Ω @ 1A, 4.5V
  • Vgs(th) (Max) @ Id
    950mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    122pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.4nC @ 4.5V
  • Rise Time
    6ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    5 ns
  • Turn-Off Delay Time
    22 ns
  • Continuous Drain Current (ID)
    1A
  • Gate to Source Voltage (Vgs)
    8V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain-source On Resistance-Max
    0.51Ohm
  • RoHS Status
    ROHS3 Compliant
Description
PMZB320UPEYL Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 122pF @ 15V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 1A.1A is the drain current of this device, which is the maximum continuous current transistor can carry.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 22 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 3 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (1.5V 4.5V) reduces this device's overall power consumption.

PMZB320UPEYL Features
a continuous drain current (ID) of 1A
the turn-off delay time is 22 ns
a 30V drain to source voltage (Vdss)


PMZB320UPEYL Applications
There are a lot of Nexperia USA Inc.
PMZB320UPEYL applications of single MOSFETs transistors.


Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
PMZB320UPEYL More Descriptions
PMZB320UPE - 30 V, P-channel Trench MOSFET
Mosfet Transistor, P Channel, -1 A, -30 V, 0.43 Ohm, -4.5 V, -700 Mv Rohs Compliant: Yes |Nexperia PMZB320UPEYL
Trans MOSFET P-CH 30V 1A 3-Pin DFN-B T/R
LDO Regulator Pos 1.23V to 29V 0.25A 16-Pin SOIC N T/R
Small Signal Field-Effect Transistor, 1A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, P-CH, -30V, -1A, SOT-883B-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -1A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.43ohm; Rds(on) Test Voltage Vgs: -4.5V; Threshold Voltage Vgs: -700mV; Power Dissipation Pd: 350mW; Transistor Case Style: SOT-883B; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
PMZB320UPE/XQFN3/REEL 7" Q1/T1
REEL 7"" Q1/T1 *STANDARD MARK SMD PITCH2MM
Product Comparison
The three parts on the right have similar specifications to PMZB320UPEYL.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Terminal Form
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    RoHS Status
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Max Dual Supply Voltage
    Radiation Hardening
    DS Breakdown Voltage-Min
    Supplier Device Package
    Max Operating Temperature
    Min Operating Temperature
    Input Capacitance
    Drain to Source Resistance
    Rds On Max
    View Compare
  • PMZB320UPEYL
    PMZB320UPEYL
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Cut Tape (CT)
    2015
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    3
    1
    SINGLE WITH BUILT-IN DIODE
    350mW Ta 6.25W Tc
    ENHANCEMENT MODE
    DRAIN
    3 ns
    P-Channel
    SWITCHING
    510m Ω @ 1A, 4.5V
    950mV @ 250μA
    122pF @ 15V
    1A Ta
    1.4nC @ 4.5V
    6ns
    30V
    1.5V 4.5V
    ±8V
    5 ns
    22 ns
    1A
    8V
    1A
    0.51Ohm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PMZB290UN,315
    8 Weeks
    -
    -
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2012
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    -
    3
    1
    SINGLE WITH BUILT-IN DIODE
    360mW Ta 2.7W Tc
    ENHANCEMENT MODE
    DRAIN
    4.5 ns
    N-Channel
    SWITCHING
    380m Ω @ 500mA, 4.5V
    950mV @ 250μA
    83pF @ 10V
    1A Ta
    0.68nC @ 4.5V
    10ns
    -
    1.8V 4.5V
    ±8V
    5 ns
    18.5 ns
    1A
    8V
    1A
    -
    ROHS3 Compliant
    YES
    e3
    Tin (Sn)
    20V
    No
    -
    -
    -
    -
    -
    -
    -
  • PMZB290UNE2YL
    8 Weeks
    Tin
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2015
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    3
    1
    SINGLE WITH BUILT-IN DIODE
    350mW Ta 5.43W Tc
    ENHANCEMENT MODE
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    320m Ω @ 1.2A, 4.5V
    950mV @ 250μA
    46pF @ 10V
    1.2A Ta
    1.4nC @ 4.5V
    10ns
    20V
    1.5V 4.5V
    ±8V
    4 ns
    11 ns
    1.2A
    8V
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    20V
    -
    -
    -
    -
    -
    -
  • PMZB150UNEYL
    8 Weeks
    -
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    -
    -55°C~150°C TJ
    Cut Tape (CT)
    2015
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    350mW Ta 6.25W Tc
    -
    -
    -
    N-Channel
    -
    200mOhm @ 1.5A, 4.5V
    950mV @ 250μA
    93pF @ 10V
    1.5A Ta
    1.6nC @ 4.5V
    -
    20V
    1.5V 4.5V
    ±8V
    -
    -
    1.5A
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    DFN1006B-3
    150°C
    -55°C
    93pF
    170mOhm
    200 mΩ
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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