PMXB40UNEZ

Nexperia USA Inc. PMXB40UNEZ

Part Number:
PMXB40UNEZ
Manufacturer:
Nexperia USA Inc.
Ventron No:
2485425-PMXB40UNEZ
Description:
MOSFET N-CH 12V 3.2A DFN1010D-3G
ECAD Model:
Datasheet:
PMXB40UNEZ

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Specifications
Nexperia USA Inc. PMXB40UNEZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMXB40UNEZ.
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    3-XDFN Exposed Pad
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2013
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Pin Count
    3
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    400mW Ta 8.33W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    DRAIN
  • Turn On Delay Time
    6 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    45m Ω @ 3.2A, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    556pF @ 10V
  • Current - Continuous Drain (Id) @ 25°C
    3.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    11.6nC @ 4.5V
  • Rise Time
    21ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.2V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    3.2A
  • Gate to Source Voltage (Vgs)
    8V
  • Max Dual Supply Voltage
    12V
  • Drain-source On Resistance-Max
    0.064Ohm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
PMXB40UNEZ Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 556pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by 12V, it supports the maximal dual supply voltage.By using drive voltage (1.2V 4.5V), this device helps reduce its overall power consumption.

PMXB40UNEZ Features
a continuous drain current (ID) of 3.2A
the turn-off delay time is 18 ns


PMXB40UNEZ Applications
There are a lot of Nexperia USA Inc.
PMXB40UNEZ applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
PMXB40UNEZ More Descriptions
NEXPERIA - PMXB40UNEZ - MOSFET-Transistor, n-Kanal, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Source Voltage Vds:12V; On Resistance
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 650mV; Power Dissipation Pd: 400mW; Transistor Case Style: DFN1010D; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
Product Comparison
The three parts on the right have similar specifications to PMXB40UNEZ.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Technology
    Terminal Position
    Pin Count
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Max Dual Supply Voltage
    Drain-source On Resistance-Max
    Radiation Hardening
    RoHS Status
    JESD-30 Code
    Number of Channels
    Power Dissipation
    Drain to Source Breakdown Voltage
    Max Junction Temperature (Tj)
    Ambient Temperature Range High
    Height
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Drain to Source Voltage (Vdss)
    View Compare
  • PMXB40UNEZ
    PMXB40UNEZ
    4 Weeks
    Tin
    Surface Mount
    3-XDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    DUAL
    3
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 8.33W Tc
    ENHANCEMENT MODE
    DRAIN
    6 ns
    N-Channel
    SWITCHING
    45m Ω @ 3.2A, 4.5V
    900mV @ 250μA
    556pF @ 10V
    3.2A Ta
    11.6nC @ 4.5V
    21ns
    1.2V 4.5V
    ±8V
    9 ns
    18 ns
    3.2A
    8V
    12V
    0.064Ohm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • PMXB65ENEZ
    4 Weeks
    -
    Surface Mount
    3-XDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2016
    Active
    1 (Unlimited)
    2
    MOSFET (Metal Oxide)
    DUAL
    3
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 8.33W Tc
    ENHANCEMENT MODE
    DRAIN
    3 ns
    N-Channel
    SWITCHING
    67m Ω @ 3.2A, 10V
    2.5V @ 250μA
    295pF @ 15V
    3.2A Ta
    11nC @ 10V
    12ns
    4.5V 10V
    ±20V
    3 ns
    11 ns
    3.2A
    20V
    30V
    0.067Ohm
    No
    ROHS3 Compliant
    R-PDSO-N2
    1
    400mW
    30V
    150°C
    150°C
    400μm
    -
    -
    -
    -
  • PMXB360ENEAZ
    4 Weeks
    -
    Surface Mount
    3-XDFN Exposed Pad
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    Active
    1 (Unlimited)
    3
    MOSFET (Metal Oxide)
    DUAL
    3
    1
    SINGLE WITH BUILT-IN DIODE
    400mW Ta 6.25W Tc
    ENHANCEMENT MODE
    DRAIN
    2 ns
    N-Channel
    SWITCHING
    450m Ω @ 1.1A, 10V
    2.7V @ 250μA
    130pF @ 40V
    1.1A Ta
    4.5nC @ 10V
    3.5ns
    4.5V 10V
    ±20V
    3 ns
    9 ns
    1.1A
    20V
    80V
    0.45Ohm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    e3
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    -
  • PMXB120EPEZ
    4 Weeks
    Tin
    Surface Mount
    3-XDFN Exposed Pad
    -
    3
    -
    -55°C~150°C TJ
    Tape & Reel (TR)
    2013
    Active
    1 (Unlimited)
    -
    MOSFET (Metal Oxide)
    -
    3
    -
    -
    400mW Ta 8.3W Tc
    -
    -
    4 ns
    P-Channel
    -
    120m Ω @ 2.4A, 10V
    2.5V @ 250μA
    309pF @ 15V
    2.4A Ta
    11nC @ 10V
    11ns
    4.5V 10V
    ±20V
    7 ns
    16 ns
    2.4A
    20V
    -30V
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    30V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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