Nexperia USA Inc. PMXB40UNEZ
- Part Number:
- PMXB40UNEZ
- Manufacturer:
- Nexperia USA Inc.
- Ventron No:
- 2485425-PMXB40UNEZ
- Description:
- MOSFET N-CH 12V 3.2A DFN1010D-3G
- Datasheet:
- PMXB40UNEZ
Nexperia USA Inc. PMXB40UNEZ technical specifications, attributes, parameters and parts with similar specifications to Nexperia USA Inc. PMXB40UNEZ.
- Factory Lead Time4 Weeks
- Contact PlatingTin
- Mounting TypeSurface Mount
- Package / Case3-XDFN Exposed Pad
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Pin Count3
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max400mW Ta 8.33W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time6 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs45m Ω @ 3.2A, 4.5V
- Vgs(th) (Max) @ Id900mV @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds556pF @ 10V
- Current - Continuous Drain (Id) @ 25°C3.2A Ta
- Gate Charge (Qg) (Max) @ Vgs11.6nC @ 4.5V
- Rise Time21ns
- Drive Voltage (Max Rds On,Min Rds On)1.2V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)9 ns
- Turn-Off Delay Time18 ns
- Continuous Drain Current (ID)3.2A
- Gate to Source Voltage (Vgs)8V
- Max Dual Supply Voltage12V
- Drain-source On Resistance-Max0.064Ohm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
PMXB40UNEZ Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 556pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by 12V, it supports the maximal dual supply voltage.By using drive voltage (1.2V 4.5V), this device helps reduce its overall power consumption.
PMXB40UNEZ Features
a continuous drain current (ID) of 3.2A
the turn-off delay time is 18 ns
PMXB40UNEZ Applications
There are a lot of Nexperia USA Inc.
PMXB40UNEZ applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 556pF @ 10V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 3.2A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 18 ns.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 8V.Powered by 12V, it supports the maximal dual supply voltage.By using drive voltage (1.2V 4.5V), this device helps reduce its overall power consumption.
PMXB40UNEZ Features
a continuous drain current (ID) of 3.2A
the turn-off delay time is 18 ns
PMXB40UNEZ Applications
There are a lot of Nexperia USA Inc.
PMXB40UNEZ applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
PMXB40UNEZ More Descriptions
NEXPERIA - PMXB40UNEZ - MOSFET-Transistor, n-Kanal, 3.2 A, 12 V, 0.034 ohm, 4.5 V, 650 mV
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Source Voltage Vds:12V; On Resistance
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 650mV; Power Dissipation Pd: 400mW; Transistor Case Style: DFN1010D; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity:N Channel; Continuous Drain Current Id:3.2A; Source Voltage Vds:12V; On Resistance
MOSFET, N-CH, 12V, 3.2A, DFN1010D-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.2A; Drain Source Voltage Vds: 12V; On Resistance Rds(on): 0.034ohm; Rds(on) Test Voltage Vgs: 4.5V; Threshold Voltage Vgs: 650mV; Power Dissipation Pd: 400mW; Transistor Case Style: DFN1010D; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018)
The three parts on the right have similar specifications to PMXB40UNEZ.
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ImagePart NumberManufacturerFactory Lead TimeContact PlatingMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsTechnologyTerminal PositionPin CountNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Max Dual Supply VoltageDrain-source On Resistance-MaxRadiation HardeningRoHS StatusJESD-30 CodeNumber of ChannelsPower DissipationDrain to Source Breakdown VoltageMax Junction Temperature (Tj)Ambient Temperature Range HighHeightJESD-609 CodeTerminal FinishAdditional FeatureDrain to Source Voltage (Vdss)View Compare
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PMXB40UNEZ4 WeeksTinSurface Mount3-XDFN Exposed PadYES3SILICON-55°C~150°C TJTape & Reel (TR)2013Active1 (Unlimited)3MOSFET (Metal Oxide)DUAL31SINGLE WITH BUILT-IN DIODE400mW Ta 8.33W TcENHANCEMENT MODEDRAIN6 nsN-ChannelSWITCHING45m Ω @ 3.2A, 4.5V900mV @ 250μA556pF @ 10V3.2A Ta11.6nC @ 4.5V21ns1.2V 4.5V±8V9 ns18 ns3.2A8V12V0.064OhmNoROHS3 Compliant------------
-
4 Weeks-Surface Mount3-XDFN Exposed PadYES3SILICON-55°C~150°C TJTape & Reel (TR)2016Active1 (Unlimited)2MOSFET (Metal Oxide)DUAL31SINGLE WITH BUILT-IN DIODE400mW Ta 8.33W TcENHANCEMENT MODEDRAIN3 nsN-ChannelSWITCHING67m Ω @ 3.2A, 10V2.5V @ 250μA295pF @ 15V3.2A Ta11nC @ 10V12ns4.5V 10V±20V3 ns11 ns3.2A20V30V0.067OhmNoROHS3 CompliantR-PDSO-N21400mW30V150°C150°C400μm----
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4 Weeks-Surface Mount3-XDFN Exposed PadYES3SILICON-55°C~150°C TJTape & Reel (TR)2013Active1 (Unlimited)3MOSFET (Metal Oxide)DUAL31SINGLE WITH BUILT-IN DIODE400mW Ta 6.25W TcENHANCEMENT MODEDRAIN2 nsN-ChannelSWITCHING450m Ω @ 1.1A, 10V2.7V @ 250μA130pF @ 40V1.1A Ta4.5nC @ 10V3.5ns4.5V 10V±20V3 ns9 ns1.1A20V80V0.45OhmNoROHS3 Compliant-------e3Tin (Sn)LOGIC LEVEL COMPATIBLE-
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4 WeeksTinSurface Mount3-XDFN Exposed Pad-3--55°C~150°C TJTape & Reel (TR)2013Active1 (Unlimited)-MOSFET (Metal Oxide)-3--400mW Ta 8.3W Tc--4 nsP-Channel-120m Ω @ 2.4A, 10V2.5V @ 250μA309pF @ 15V2.4A Ta11nC @ 10V11ns4.5V 10V±20V7 ns16 ns2.4A20V-30V-NoROHS3 Compliant----------30V
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