NXP USA Inc. PMF280UN,115
- Part Number:
- PMF280UN,115
- Manufacturer:
- NXP USA Inc.
- Ventron No:
- 3586561-PMF280UN,115
- Description:
- MOSFET N-CH 20V 1.02A SOT323
- ECAD Model:
-
- Datasheet:
- PMF280UN
NXP USA Inc. PMF280UN,115 technical specifications, attributes, parameters and parts with similar specifications to NXP USA Inc. PMF280UN,115.
- Mounting TypeSurface Mount
- Package / CaseSC-70, SOT-323
- Surface MountYES
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesTrenchMOS™
- Published1997
- JESD-609 Codee3
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- HTS Code8541.29.00.75
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max560mW Tc
- Operating ModeENHANCEMENT MODE
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs340m Ω @ 200mA, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds45pF @ 20V
- Current - Continuous Drain (Id) @ 25°C1.02A Tc
- Gate Charge (Qg) (Max) @ Vgs0.89nC @ 4.5V
- Drain to Source Voltage (Vdss)20V
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Drain Current-Max (Abs) (ID)1.02A
- Drain-source On Resistance-Max0.34Ohm
- DS Breakdown Voltage-Min20V
- RoHS StatusROHS3 Compliant
PMF280UN,115 Overview
A device's maximal input capacitance is 45pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 1.02A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
PMF280UN,115 Features
a 20V drain to source voltage (Vdss)
PMF280UN,115 Applications
There are a lot of NXP USA Inc.
PMF280UN,115 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 45pF @ 20V, which is defined as the capacitance between its input terminals with either input grounded.In this device, the drain current is 1.02A, which is the maximum continuous current the device can conduct.To maintain normal operation, it is recommended that the DS breakdown voltage be above 20V.This transistor requires a 20V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (1.8V 4.5V).
PMF280UN,115 Features
a 20V drain to source voltage (Vdss)
PMF280UN,115 Applications
There are a lot of NXP USA Inc.
PMF280UN,115 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
PMF280UN,115 More Descriptions
Trans MOSFET N-CH 20V 1.02A 3-Pin SC-70 T/R
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.02A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes
MOSFET, N CH, 20V, 1.02A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:560mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.02A; Package / Case:SOT-323; Power Dissipation Pd:560mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
MOSFET Transistor; Transistor Polarity:N Channel; Continuous Drain Current, Id:1.02A; Drain Source Voltage, Vds:20V; On Resistance, Rds(on):280mohm; Rds(on) Test Voltage, Vgs:4.5V; Threshold Voltage, Vgs Typ:700mV ;RoHS Compliant: Yes
MOSFET, N CH, 20V, 1.02A, SOT-323; Transistor Polarity:N Channel; Continuous Drain Current Id:200mA; Drain Source Voltage Vds:20V; On Resistance Rds(on):340mohm; Rds(on) Test Voltage Vgs:4.5V; Threshold Voltage Vgs Typ:700mV; Power Dissipation Pd:560mW; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:SOT-323; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:1.02A; Package / Case:SOT-323; Power Dissipation Pd:560mW; Termination Type:SMD; Transistor Type:Enhancement; Voltage Vds Typ:20V; Voltage Vgs Max:700mV; Voltage Vgs Rds on Measurement:4.5V
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