Nexperia USA Inc. PHD9NQ20T,118

PHD9NQ20T,118 Overview
A device's maximum input capacitance is 959pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 8.7A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=200V, and this device has a drain-to-source breakdown voltage of 200V voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 25 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 8 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.Powered by 200V, it supports maximum dual supply voltages.This device uses no drive voltage (10V) to reduce its overall power consumption.

PHD9NQ20T,118 Features
a continuous drain current (ID) of 8.7A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 25 ns


PHD9NQ20T,118 Applications
There are a lot of Nexperia USA Inc.
PHD9NQ20T,118 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters