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NVR4003NT3G

ON Semiconductor NVR4003NT3G

Part Number:
NVR4003NT3G
Manufacturer:
ON Semiconductor
Ventron No:
2480084-NVR4003NT3G
Description:
MOSFET N-CH 30V SOT-23-3
ECAD Model:
Datasheet:
NVR4003NT3G

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Specifications
ON Semiconductor NVR4003NT3G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVR4003NT3G.
  • Lifecycle Status
    ACTIVE (Last Updated: 12 hours ago)
  • Factory Lead Time
    9 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Weight
    1.437803g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    690mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    690mW
  • Turn On Delay Time
    16.7 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    1.5 Ω @ 10mA, 4V
  • Vgs(th) (Max) @ Id
    1.4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    21pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    500mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    1.15nC @ 5V
  • Rise Time
    47.9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    2.5V 4V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    64.2 ns
  • Turn-Off Delay Time
    65.1 ns
  • Continuous Drain Current (ID)
    500mA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.5A
  • Drain-source On Resistance-Max
    2Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVR4003NT3G Description
NVR4003NT3G is a 30v Single N-Channel Small Signal MOSFET. The onsemi NVR4003NT3G can be applied in automotive applications due to the following features, such as Level Shifters, Logic Switches, Low Side Load Switches, Portable Applications, and Notebooks. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NVR4003NT3G is in the SOT-23-3 package with 830mW power dissipation.

NVR4003NT3G Features
ESD Protected Gate
Low Gate Charge for Fast Switching
Minimum Breakdown Voltage Rating of 30 V
SOT-23 Package Provides Excellent Thermal Performance
RoHS Compliant
Low Gate Voltage Threshold (VGS(TH)) to Facilitate Drive Circuit Design
AEC-Q101 Qualified and PPAP capable

NVR4003NT3G Applications
Level Shifters
Logic Switches
Low Side Load Switches
Portable Applications
Notebooks
NVR4003NT3G More Descriptions
Single N-Channel Small Signal MOSFET 30V, 560mA, 1.5Ω NFET SOT23 30V .56A 1500M. Automotive Version of the NTR4003N
Single N-Channel 30 V 2 Ohm 1.15 nC 0.69W Silicon SMT Mosfet - SOT-23
Trans MOSFET N-CH 30V 0.5A 3-Pin SOT-23 T/R - Tape and Reel
MOSFET, AEC-Q101, N-CH, 30V, SOT-23; Transistor Polarity: N Channel; Continuous Drain Current Id: 560mA; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 1ohm; Rds(on) Test Voltage Vgs: 4V; Threshold Voltage Vgs: 1.4V; Power Dissipation Pd: 830mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Field-Effect Transistor, 0.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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