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NVR1P02T1G

ON Semiconductor NVR1P02T1G

Part Number:
NVR1P02T1G
Manufacturer:
ON Semiconductor
Ventron No:
2479217-NVR1P02T1G
Description:
MOSFET P-CH 20V 1A SOT-23-3
ECAD Model:
Datasheet:
NVR1P02T1G

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Specifications
ON Semiconductor NVR1P02T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVR1P02T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 12 hours ago)
  • Factory Lead Time
    2 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2012
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    400mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    400mW
  • Turn On Delay Time
    7 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    180m Ω @ 1.5A, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    165pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    1A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.5nC @ 5V
  • Rise Time
    9ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    9 ns
  • Continuous Drain Current (ID)
    1A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    1A
  • Drain to Source Breakdown Voltage
    -20V
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVR1P02T1G Description
NVR1P02T1G is a type of P-channel power MOSFET provided by ON Semiconductor. It is able to minimize on-state resistance for high efficiency and extended battery life. It is available in the industry-standard surface-mount SOT?23 package for the purpose of saving board space. It is well suited for power management in portable and battery-powered products.

NVR1P02T1G Features
Low on-resistance
Improved efficiency
Extended battery life
Available in the SOT?23 package 

NVR1P02T1G Applications
Printers
Computers
PCMCIA cards
DC-DC converters
Cellular and Cordless telephones
NVR1P02T1G More Descriptions
NVR1P02T1G P-channel MOSFET Transistor, 1 A, 20 V, 3-Pin SOT-23 | ON Semiconductor NVR1P02T1G
P-Channel 20 V 1 A 0.18 Ohm Surface Mount Power Mosfet - SOT-23
Single P-Channel Power MOSFET -20V, -1A, 180mΩ Power MOSFET -20V, -1A, 180 mOhm, Single P-Channel, SOT-23.
Trans MOSFET P-CH 20V 1A 3-Pin SOT-23 T/R - Tape and Reel
20V 1A 400mW 180m´Î@10V1.5A 2.3V@250Ã×A P Channel SOT-23(SOT-23-3) MOSFETs ROHS
MOSFET, AEC-Q101, P-CH, -20V, SOT-23; Transistor Polarity: P Channel; Continuous Drain Current Id: -1A; Drain Source Voltage Vds: -20V; On Resistance Rds(on): 0.148ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -1.9V; Power Dissipation Pd: 400mW; Transistor Case Style: SOT-23; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: No SVHC (27-Jun-2018)
Small Signal Field-Effect Transistor, 1A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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