ON Semiconductor NVF2955T1G
- Part Number:
- NVF2955T1G
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2484152-NVF2955T1G
- Description:
- MOSFET P-CH 60V 2.6A SOT223
- Datasheet:
- NVF2955T1G
ON Semiconductor NVF2955T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVF2955T1G.
- Lifecycle StatusACTIVE (Last Updated: 4 days ago)
- Factory Lead Time12 Weeks
- Mounting TypeSurface Mount
- Package / CaseTO-261-4, TO-261AA
- Surface MountYES
- Number of Pins4
- Weight250.212891mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesAutomotive, AEC-Q101
- Published2008
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations4
- ECCN CodeEAR99
- Resistance170MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Pin Count4
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max1W Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation2.3W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs170m Ω @ 750mA, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds492pF @ 25V
- Current - Continuous Drain (Id) @ 25°C2.6A Ta
- Gate Charge (Qg) (Max) @ Vgs14.3nC @ 10V
- Rise Time7.6ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)38 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)2.6A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Avalanche Energy Rating (Eas)225 mJ
- Height1.65mm
- Length6.7mm
- Width3.7mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
NVF2955T1G Description
NVF2955T1G is MOSFET, Pb?Free and RoHS Compliant, the package of the device is TO-261-4.
NVF2955T1G Features
? Created with a low RDS in mind (on)
? In Avalanche and Commutation Modes, it can withstand a lot of energy.
? NVF2955 is AECQ101 qualified.
? These devices are RoHS compliant and free of lead.
NVF2955T1G Applications
? Power Sources
? Motor Control (PWM)
? Converting devices
? Electricity Management
NVF2955T1G is MOSFET, Pb?Free and RoHS Compliant, the package of the device is TO-261-4.
NVF2955T1G Features
? Created with a low RDS in mind (on)
? In Avalanche and Commutation Modes, it can withstand a lot of energy.
? NVF2955 is AECQ101 qualified.
? These devices are RoHS compliant and free of lead.
NVF2955T1G Applications
? Power Sources
? Motor Control (PWM)
? Converting devices
? Electricity Management
NVF2955T1G More Descriptions
Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ Automotive Version of the NTF2955.
MOSFET P-CH 60V 2.6A SOT223 / Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 60 V 2.6 A 170 mOhm Surface Mount Power MOSFET SOT-223
NVF2955T1G P-channel MOSFET Transistor, 2 A, 60 V, 3 Tab-Pin SOT-223 | ON Semiconductor NVF2955T1G
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Source Voltage Vds:-60V; On Resistance
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
MOSFET P-CH 60V 2.6A SOT223 / Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 60 V 2.6 A 170 mOhm Surface Mount Power MOSFET SOT-223
NVF2955T1G P-channel MOSFET Transistor, 2 A, 60 V, 3 Tab-Pin SOT-223 | ON Semiconductor NVF2955T1G
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Source Voltage Vds:-60V; On Resistance
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
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