NVF2955T1G

ON Semiconductor NVF2955T1G

Part Number:
NVF2955T1G
Manufacturer:
ON Semiconductor
Ventron No:
2484152-NVF2955T1G
Description:
MOSFET P-CH 60V 2.6A SOT223
ECAD Model:
Datasheet:
NVF2955T1G

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Specifications
ON Semiconductor NVF2955T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NVF2955T1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    12 Weeks
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-261-4, TO-261AA
  • Surface Mount
    YES
  • Number of Pins
    4
  • Weight
    250.212891mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    Automotive, AEC-Q101
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Resistance
    170MOhm
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Pin Count
    4
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    2.3W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    170m Ω @ 750mA, 10V
  • Vgs(th) (Max) @ Id
    4V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    492pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    2.6A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    14.3nC @ 10V
  • Rise Time
    7.6ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    38 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    2.6A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Avalanche Energy Rating (Eas)
    225 mJ
  • Height
    1.65mm
  • Length
    6.7mm
  • Width
    3.7mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NVF2955T1G Description
NVF2955T1G is MOSFET, Pb?Free and RoHS Compliant, the package of the device is TO-261-4.

NVF2955T1G Features
? Created with a low RDS in mind (on)
? In Avalanche and Commutation Modes, it can withstand a lot of energy.
? NVF2955 is AECQ101 qualified.
? These devices are RoHS compliant and free of lead.

NVF2955T1G Applications
? Power Sources
? Motor Control (PWM)
? Converting devices
? Electricity Management
NVF2955T1G More Descriptions
Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ Automotive Version of the NTF2955.
MOSFET P-CH 60V 2.6A SOT223 / Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel 60 V 2.6 A 170 mOhm Surface Mount Power MOSFET SOT-223
NVF2955T1G P-channel MOSFET Transistor, 2 A, 60 V, 3 Tab-Pin SOT-223 | ON Semiconductor NVF2955T1G
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity:P Channel; Continuous Drain Current Id:-2.6A; Source Voltage Vds:-60V; On Resistance
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
MOSFET, P-CH, -60V, -2.6A, SOT-223; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.6A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.145ohm; Rds(on) Test Voltage Vgs: -10V; Threshold Voltage Vgs: -4V; Power Dissipation Pd: 2.3W; Transistor Case Style: SOT-223; No. of Pins: 4Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: AEC-Q101; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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