ON Semiconductor NTTFS4823NTWG

Name: NTTFS4823NTWG
Brand: ON Semiconductor
SKU: 2490494-NTTFS4823NTWG
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTTFS4823NTWG

Manufacturer:: ON Semiconductor

Ventron No:: 2490494-NTTFS4823NTWG

Description:: MOSFET N-CH 30V 7.1A 8WDFN

ECAD Model:

Datasheet:: NTTFS4823NTWG

Specifications

ON Semiconductor NTTFS4823NTWG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTTFS4823NTWG.

Mounting Type
Surface Mount
Package / Case
8-PowerWDFN
Supplier Device Package
8-WDFN (3.3x3.3)
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Technology
MOSFET (Metal Oxide)
Power Dissipation-Max
660mW Ta 32.9W Tc
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
10.5mOhm @ 20A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1.013pF @ 12V
Current - Continuous Drain (Id) @ 25°C
7.1A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs
9nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 11.5V
Vgs (Max)
±20V
RoHS Status
ROHS3 Compliant

Description

NTTFS4823NTWG Overview
A device's maximal input capacitance is 1.013pF @ 12V, which is defined as the capacitance between its input terminals with either input grounded.This transistor requires a 30V drain to source voltage (Vdss).This device reduces its overall power consumption by using drive voltage (4.5V 11.5V).

NTTFS4823NTWG Features
a 30V drain to source voltage (Vdss)

NTTFS4823NTWG Applications
There are a lot of Rochester Electronics, LLC
NTTFS4823NTWG applications of single MOSFETs transistors.

Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples

NTTFS4823NTWG More Descriptions

Power MOSFET 30V 50A 17.5 mOhm Single N-Channel u8FL
Trans MOSFET N-CH 30V 17.5A 8-Pin WDFN T/R - Tape and Reel
Power Field-Effect Transistor, 12.6A I(D), 30V, 0.0175ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 7.1A Ta 50A Tc 17.5A 4W 4ns
MOSFET N-CH 30V 7.1A/50A 8WDFN
NTTFS4823NTWG, SINGLE MOSFETS;
N CHANNEL MOSFET, 30V, 12.6A, WDFN8; Transistor Polarity:N Channel; Continuous Drain Current Id:17.5A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V

Product Comparison

The three parts on the right have similar specifications to NTTFS4823NTWG.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Supplier Device Package

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Technology

Power Dissipation-Max

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

RoHS Status

Lifecycle Status

Factory Lead Time

Contact Plating

Surface Mount

Number of Pins

Transistor Element Material

Published

JESD-609 Code

Pbfree Code

Number of Terminations

ECCN Code

Subcategory

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Number of Elements

Number of Channels

Element Configuration

Operating Mode

Case Connection

Transistor Application

Halogen Free

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

Radiation Hardening

Lead Free

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

View Compare
NTTFS4823NTWG

ON Semiconductor

Surface Mount

8-PowerWDFN

8-WDFN (3.3x3.3)

-55°C~150°C TJ

Tape & Reel (TR)

Obsolete

1 (Unlimited)

MOSFET (Metal Oxide)

660mW Ta 32.9W Tc

N-Channel

10.5mOhm @ 20A, 10V

2.5V @ 250μA

1.013pF @ 12V

7.1A Ta 50A Tc

9nC @ 4.5V

30V

4.5V 11.5V

±20V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTTFS4C13NTAG

ON Semiconductor

Surface Mount

8-PowerWDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

MOSFET (Metal Oxide)

780mW Ta 21.5W Tc

N-Channel

9.4m Ω @ 30A, 10V

2.1V @ 250μA

770pF @ 15V

7.2A Ta

7.8nC @ 4.5V

30V

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Tin

YES

8

SILICON

2014

e3

yes

5

EAR99

FET General Purpose Power

DUAL

FLAT

8

S-PDSO-F5

1

1

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

Halogen Free

7.2A

20V

0.0094Ohm

30V

No

Lead Free

-

-

-

-

-

-

-

NTTFS4823NTWG vs NTTFS4C13NTAG
NTTFS4C06NTAG

ON Semiconductor

Surface Mount

8-PowerWDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

MOSFET (Metal Oxide)

810mW Ta 31W Tc

N-Channel

4.2m Ω @ 30A, 10V

2.2V @ 250μA

3366pF @ 15V

11A Ta 67A Tc

36nC @ 10V

-

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Tin

YES

8

SILICON

2014

e3

yes

5

EAR99

FET General Purpose Power

DUAL

FLAT

8

S-PDSO-F5

1

-

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

Halogen Free

67A

20V

0.0061Ohm

-

No

Lead Free

11A

30V

-

-

-

-

-

NTTFS4823NTWG vs NTTFS4C06NTAG
NTTFS4939NTAG

ON Semiconductor

Surface Mount

8-PowerWDFN

-

-55°C~150°C TJ

Tape & Reel (TR)

Active

1 (Unlimited)

MOSFET (Metal Oxide)

850mW Ta 29.8W Tc

N-Channel

5.5m Ω @ 20A, 10V

2.2V @ 250μA

1979pF @ 15V

8.9A Ta 52A Tc

28nC @ 10V

-

4.5V 10V

±20V

ROHS3 Compliant

ACTIVE (Last Updated: 4 days ago)

2 Weeks

Tin

YES

8

SILICON

2009

e3

yes

5

EAR99

FET General Purpose Power

DUAL

-

8

S-XDSO-N5

1

-

Single

ENHANCEMENT MODE

DRAIN

SWITCHING

-

14.3A

20V

-

-

No

Lead Free

52A

30V

2.21W

12.2 ns

20.6ns

3.9 ns

20.8 ns

NTTFS4823NTWG vs NTTFS4939NTAG