NTR2101PT1

ON Semiconductor NTR2101PT1

Part Number:
NTR2101PT1
Manufacturer:
ON Semiconductor
Ventron No:
2489422-NTR2101PT1
Description:
MOSFET P-CH 8V 3.7A SOT-23
ECAD Model:
Datasheet:
NTR2101PT1

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Specifications
ON Semiconductor NTR2101PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR2101PT1.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2006
  • JESD-609 Code
    e0
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Lead (Sn/Pb)
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -8V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    240
  • Reach Compliance Code
    not_compliant
  • Current Rating
    -3.7A
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Pin Count
    3
  • JESD-30 Code
    R-PDSO-G3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    960mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    960mW
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    52m Ω @ 3.5A, 4.5V
  • Vgs(th) (Max) @ Id
    1V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1173pF @ 4V
  • Gate Charge (Qg) (Max) @ Vgs
    15nC @ 4.5V
  • Rise Time
    15.75ns
  • Drive Voltage (Max Rds On,Min Rds On)
    1.8V 4.5V
  • Vgs (Max)
    ±8V
  • Fall Time (Typ)
    15.75 ns
  • Turn-Off Delay Time
    38 ns
  • Continuous Drain Current (ID)
    -3.7A
  • JEDEC-95 Code
    TO-236AB
  • Gate to Source Voltage (Vgs)
    8V
  • Drain-source On Resistance-Max
    0.052Ohm
  • Drain to Source Breakdown Voltage
    -8V
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NTR2101PT1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1173pF @ 4V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -8V.As a result of its turn-off delay time, which is 38 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).

NTR2101PT1 Features
a continuous drain current (ID) of -3.7A
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 38 ns


NTR2101PT1 Applications
There are a lot of ON Semiconductor
NTR2101PT1 applications of single MOSFETs transistors.


DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTR2101PT1 More Descriptions
MOSFETs- Power and Small Signal -8V 3.7A P-Channel No-Cancel/No-Return
MOSFET P-CH 8V 3.7A SOT-23
MOSFET P-CH 8V 3.7A SOT23-3
Small Signal Field-Effect Transistor, 3.7A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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