ON Semiconductor NTR2101PT1
- Part Number:
- NTR2101PT1
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489422-NTR2101PT1
- Description:
- MOSFET P-CH 8V 3.7A SOT-23
- Datasheet:
- NTR2101PT1
ON Semiconductor NTR2101PT1 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR2101PT1.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-236-3, SC-59, SOT-23-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- Published2006
- JESD-609 Codee0
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTin/Lead (Sn/Pb)
- SubcategoryOther Transistors
- Voltage - Rated DC-8V
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)240
- Reach Compliance Codenot_compliant
- Current Rating-3.7A
- Time@Peak Reflow Temperature-Max (s)30
- Pin Count3
- JESD-30 CodeR-PDSO-G3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max960mW Ta
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation960mW
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs52m Ω @ 3.5A, 4.5V
- Vgs(th) (Max) @ Id1V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1173pF @ 4V
- Gate Charge (Qg) (Max) @ Vgs15nC @ 4.5V
- Rise Time15.75ns
- Drive Voltage (Max Rds On,Min Rds On)1.8V 4.5V
- Vgs (Max)±8V
- Fall Time (Typ)15.75 ns
- Turn-Off Delay Time38 ns
- Continuous Drain Current (ID)-3.7A
- JEDEC-95 CodeTO-236AB
- Gate to Source Voltage (Vgs)8V
- Drain-source On Resistance-Max0.052Ohm
- Drain to Source Breakdown Voltage-8V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTR2101PT1 Overview
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1173pF @ 4V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -8V.As a result of its turn-off delay time, which is 38 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
NTR2101PT1 Features
a continuous drain current (ID) of -3.7A
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 38 ns
NTR2101PT1 Applications
There are a lot of ON Semiconductor
NTR2101PT1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 1173pF @ 4V.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.This device has -8V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals -8V.As a result of its turn-off delay time, which is 38 ns, the device has taken time to charge its input capacitance before drain current conduction begins.Gate-source voltages (VGS) are voltages that fall across the gate-source terminal of FET transistors. VGS is sometimes 8VV.In addition to reducing power consumption, this device uses drive voltage (1.8V 4.5V).
NTR2101PT1 Features
a continuous drain current (ID) of -3.7A
a drain-to-source breakdown voltage of -8V voltage
the turn-off delay time is 38 ns
NTR2101PT1 Applications
There are a lot of ON Semiconductor
NTR2101PT1 applications of single MOSFETs transistors.
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
NTR2101PT1 More Descriptions
MOSFETs- Power and Small Signal -8V 3.7A P-Channel No-Cancel/No-Return
MOSFET P-CH 8V 3.7A SOT-23
MOSFET P-CH 8V 3.7A SOT23-3
Small Signal Field-Effect Transistor, 3.7A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET P-CH 8V 3.7A SOT-23
MOSFET P-CH 8V 3.7A SOT23-3
Small Signal Field-Effect Transistor, 3.7A I(D), 8V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
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