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NTR0202PLT1G

ON Semiconductor NTR0202PLT1G

Part Number:
NTR0202PLT1G
Manufacturer:
ON Semiconductor
Ventron No:
2484691-NTR0202PLT1G
Description:
MOSFET P-CH 20V 400MA SOT-23
ECAD Model:
Datasheet:
NTR0202PLT1G

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Specifications
ON Semiconductor NTR0202PLT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTR0202PLT1G.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    4 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-236-3, SC-59, SOT-23-3
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2002
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    550MOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -20V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -400mA
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    225mW Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    225mW
  • Turn On Delay Time
    3 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    800m Ω @ 200mA, 10V
  • Vgs(th) (Max) @ Id
    2.3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    70pF @ 5V
  • Current - Continuous Drain (Id) @ 25°C
    400mA Ta
  • Gate Charge (Qg) (Max) @ Vgs
    2.18nC @ 10V
  • Rise Time
    6ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    6 ns
  • Turn-Off Delay Time
    18 ns
  • Continuous Drain Current (ID)
    400mA
  • Threshold Voltage
    -1.9V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    0.4A
  • Drain to Source Breakdown Voltage
    -20V
  • Height
    1.01mm
  • Length
    3.04mm
  • Width
    1.4mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTR0202PLT1G Description
NTR0202PLT1G belongs to the family of N-channel power MOSFETs manufactured by ON Semiconductor, which is widely used in analog circuits and digital circuits. Its surface-mount package can effectively save board space. Due to its superior quality and reliable performance, power MOSFET NTR0202PLT1G is well suited for power management in portable products that are powered by battery, including cellular and cordless telephones, PCMCIA cards, etc.

NTR0202PLT1G Features
Low RDS(on) 
Logic-level gate drive
Pb?Free
Surface-mount package
Available in the SOT-23 package

NTR0202PLT1G Applications
Printers
Computers
PCMCIA cards
DC?DC converters
Cellular and cordless telephones
NTR0202PLT1G More Descriptions
NTR0202PL: Small Signal MOSFET 20V 400mA 800 mOhm Single P-Channel SOT-23 Logic Level
P-Channel 20 V 550 mOhm 225 mW Surface Mount Power MOSFET - SOT-23
NTR0202PLT1G P-channel MOSFET Transistor, 0.4 A, 20 V, 3-Pin SOT-23 | ON Semiconductor NTR0202PLT1G
Single P-Channel Power MOSFET -20V, -400mA, 800mΩ
20V 400mA 225mW 800m¦¸@10V,200mA 2.3V@250¦ÌA P Channel SOT-23(SOT-23-3) MOSFETs ROHS
Trans MOSFET P-CH 20V 0.4A 3-Pin SOT-23 T/R - Tape and Reel
Small Signal Field-Effect Transistor, 0.4A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
P Channel Mosfet, -20V, 400Ma, Sot-23, Full Reel; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:400Μa; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Power Dissipation:225Mw Rohs Compliant: Yes |Onsemi NTR0202PLT1G.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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