ON Semiconductor NTMFS4925NT1G

Name: NTMFS4925NT1G
Brand: ON Semiconductor
SKU: 3554259-NTMFS4925NT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMFS4925NT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3554259-NTMFS4925NT1G

Description:: MOSFET N-CH 30V 9.7A SO-8FL

ECAD Model:

Datasheet:: NTMFS4925NT1G

Specifications

ON Semiconductor NTMFS4925NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4925NT1G.

Lifecycle Status
ACTIVE (Last Updated: 4 days ago)
Factory Lead Time
16 Weeks
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Surface Mount
YES
Number of Pins
5
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2011
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
5
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
920mW Ta 23.2W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
23.2W
Case Connection
DRAIN
Turn On Delay Time
9.5 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5.6m Ω @ 30A, 10V
Vgs(th) (Max) @ Id
2.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1264pF @ 15V
Current - Continuous Drain (Id) @ 25°C
9.7A Ta 48A Tc
Gate Charge (Qg) (Max) @ Vgs
21.5nC @ 10V
Rise Time
32.7ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6.2 ns
Turn-Off Delay Time
16.4 ns
Continuous Drain Current (ID)
48A
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
9.7A
Drain to Source Breakdown Voltage
30V
Height
1.1mm
Length
5.1mm
Width
6.1mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTMFS4925NT1G   Description
A trench gate MOSFET is basically an attempt to make a complete chip. conduct the current vertically from one surface to the other so as to achieve a high. drive capability. It is realized by packing millions of trenches on a chip, deep. enough to cross the oppositely doped 'body' region below the top surface NTMFS4925NT1G   Features
? Low RDS(on) to Minimize Conduction Losses ? Low Capacitance to Minimize Driver Losses ? Optimized Gate Charge to Minimize Switching Losses ? Optimized for 5 V, 12 V Gate Drives ? These Devices are Pb?Free, Halogen Free/BFR Free and are RoHS Compliant
NTMFS4925NT1G   Applications ? CPU Power Delivery ? DC?DC Converters

NTMFS4925NT1G More Descriptions

Single N-Channel Power MOSFET 30V, 48A, 5.6mΩ Power MOSFET 30V 48A 6mOhm Single N-Channel SO-8FL
NTMFS4925N Series 30 V 48 A 0.0056 Ohms N-Channel Power Mosfet - SO-8 FL
NTMFS4925NT1G N-channel MOSFET Transistor, 48 A, 30 V, 8-Pin SO-8FL | ON Semiconductor NTMFS4925NT1G
Mosfet, N-Ch, 30V, 48A, Soic; Transistor Polarity:N Channel; Continuous Drain Current Id:48A; Drain Source Voltage Vds:30V; On Resistance Rds(On):0.0045Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:2.2V; Power Dissipation Rohs Compliant: Yes |Onsemi NTMFS4925NT1G

Product Comparison

The three parts on the right have similar specifications to NTMFS4925NT1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Surface Mount

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain to Source Breakdown Voltage

Height

Length

Width

RoHS Status

Lead Free

Supplier Device Package

Drain to Source Voltage (Vdss)

View Compare
NTMFS4925NT1G

ON Semiconductor

ACTIVE (Last Updated: 4 days ago)

16 Weeks

Surface Mount

8-PowerTDFN, 5 Leads

YES

5

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2011

e3

yes

Active

1 (Unlimited)

5

EAR99

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

5

Not Qualified

1

920mW Ta 23.2W Tc

Single

ENHANCEMENT MODE

23.2W

DRAIN

9.5 ns

N-Channel

SWITCHING

5.6m Ω @ 30A, 10V

2.2V @ 250μA

1264pF @ 15V

9.7A Ta 48A Tc

21.5nC @ 10V

32.7ns

4.5V 10V

±20V

6.2 ns

16.4 ns

48A

20V

9.7A

30V

1.1mm

5.1mm

6.1mm

ROHS3 Compliant

Lead Free

-

-

-
NTMFS4836NT1G

ON Semiconductor

-

-

Surface Mount

8-PowerTDFN, 5 Leads

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

890mW Ta 55.6W Tc

-

-

-

-

-

N-Channel

-

4mOhm @ 30A, 10V

2.5V @ 250μA

2.677pF @ 12V

11A Ta 90A Tc

28nC @ 4.5V

-

4.5V 11.5V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

5-DFN (5x6) (8-SOFL)

30V

NTMFS4925NT1G vs NTMFS4836NT1G
NTMFS4120NT1G

ON Semiconductor

-

-

Surface Mount

8-PowerTDFN, 5 Leads

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

900mW Ta

-

-

-

-

-

N-Channel

-

4.5mOhm @ 26A, 10V

2.5V @ 250μA

3.6pF @ 24V

11A Ta

50nC @ 4.5V

-

4.5V 10V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

5-DFN (5x6) (8-SOFL)

30V

NTMFS4925NT1G vs NTMFS4120NT1G
NTMFS4744NT1G

ON Semiconductor

-

-

Surface Mount

8-PowerTDFN, 5 Leads

-

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

-

Obsolete

1 (Unlimited)

-

-

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

880mW Ta 47.2W Tc

-

-

-

-

-

N-Channel

-

7.6mOhm @ 30A, 10V

2.5V @ 250μA

1.3pF @ 12V

7A Ta

17nC @ 4.5V

-

4.5V 11.5V

±20V

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

5-DFN (5x6) (8-SOFL)

30V

NTMFS4925NT1G vs NTMFS4744NT1G