ON Semiconductor NTMFS4708NT1G

Name: NTMFS4708NT1G
Brand: ON Semiconductor
SKU: 3586619-NTMFS4708NT1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTMFS4708NT1G

Manufacturer:: ON Semiconductor

Ventron No:: 3586619-NTMFS4708NT1G

Description:: MOSFET N-CH 30V 7.8A SO8FL

ECAD Model:

Datasheet:: NTMFS4708NT1G

Specifications

ON Semiconductor NTMFS4708NT1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTMFS4708NT1G.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN, 5 Leads
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
MATTE TIN
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
260
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
JESD-30 Code
R-PDSO-F5
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
1W Ta
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
10m Ω @ 11.5A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
970pF @ 24V
Current - Continuous Drain (Id) @ 25°C
7.8A Ta
Gate Charge (Qg) (Max) @ Vgs
15nC @ 4.5V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Drain Current-Max (Abs) (ID)
7.8A
Drain-source On Resistance-Max
0.01Ohm
DS Breakdown Voltage-Min
30V
RoHS Status
ROHS3 Compliant

Description

NTMFS4708NT1G Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 970pF @ 24V.7.8A is the drain current of this device, which is the maximum continuous current transistor can carry.To maintain normal operation, the DS breakdown voltage should be kept above 30V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 30V.Using drive voltage (4.5V 10V) reduces this device's overall power consumption.

NTMFS4708NT1G Features
a 30V drain to source voltage (Vdss)

NTMFS4708NT1G Applications
There are a lot of Rochester Electronics, LLC
NTMFS4708NT1G applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

NTMFS4708NT1G More Descriptions

Small Signal Field-Effect Transistor, 7.8A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
NFET SO8FL 19A 30V 7.3MO - Tape and Reel
MOSFETs- Power and Small Signal 30V 19A N-Channel
Tape & Reel (TR) Surface Mount N-Channel SINGLE WITH BUILT-IN DIODE Mosfet Transistor 7.8A Ta 7.8A 2.2W 16ns
NTMFS4708NT1G, SINGLE MOSFETS;

Product Comparison

The three parts on the right have similar specifications to NTMFS4708NT1G.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

DS Breakdown Voltage-Min

RoHS Status

Lifecycle Status

Number of Pins

Published

ECCN Code

Subcategory

Element Configuration

Power Dissipation

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Lead Free

Supplier Device Package

View Compare
NTMFS4708NT1G

ON Semiconductor

Surface Mount

8-PowerTDFN, 5 Leads

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

5

MATTE TIN

MOSFET (Metal Oxide)

DUAL

FLAT

260

40

8

R-PDSO-F5

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

1W Ta

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10m Ω @ 11.5A, 10V

2.5V @ 250μA

970pF @ 24V

7.8A Ta

15nC @ 4.5V

30V

4.5V 10V

±20V

7.8A

0.01Ohm

30V

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
NTMFS4823NT3G

ON Semiconductor

Surface Mount

8-PowerTDFN, 5 Leads

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

NOT SPECIFIED

5

-

Not Qualified

1

-

860mW Ta 32.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

10.6m Ω @ 30A, 10V

2.5V @ 250μA

795pF @ 15V

6.9A Ta 30A Tc

13nC @ 11.5V

-

4.5V 11.5V

±20V

6.9A

0.018Ohm

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 5 days ago)

5

2009

EAR99

FET General Purpose Power

Single

5.43W

29ns

3.8 ns

12.7 ns

30A

16V

30V

Lead Free

-

NTMFS4708NT1G vs NTMFS4823NT3G
NTMFS4846NT3G

ON Semiconductor

Surface Mount

8-PowerTDFN, 5 Leads

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

e3

yes

Obsolete

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

NOT SPECIFIED

5

-

Not Qualified

1

-

890mW Ta 55.5W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

3.4m Ω @ 30A, 10V

2.5V @ 250μA

3250pF @ 12V

12.7A Ta 100A Tc

53nC @ 11.5V

-

4.5V 11.5V

±20V

100A

-

-

RoHS Compliant

LAST SHIPMENTS (Last Updated: 21 hours ago)

5

2009

EAR99

FET General Purpose Power

Single

5.9W

18.9ns

7.1 ns

34.2 ns

20.3A

16V

30V

Lead Free

-

NTMFS4708NT1G vs NTMFS4846NT3G
NTMFS4744NT1G

ON Semiconductor

Surface Mount

8-PowerTDFN, 5 Leads

-

-

-55°C~150°C TJ

Tape & Reel (TR)

-

-

Obsolete

1 (Unlimited)

-

-

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

-

-

880mW Ta 47.2W Tc

-

-

N-Channel

-

7.6mOhm @ 30A, 10V

2.5V @ 250μA

1.3pF @ 12V

7A Ta

17nC @ 4.5V

30V

4.5V 11.5V

±20V

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

5-DFN (5x6) (8-SOFL)

NTMFS4708NT1G vs NTMFS4744NT1G