ON Semiconductor NTHS5441T1G

Name: NTHS5441T1G
Brand: ON Semiconductor
SKU: 2850179-NTHS5441T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTHS5441T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2850179-NTHS5441T1G

Description:: MOSFET P-CH 20V 3.9A CHIPFET

ECAD Model:

Datasheet:: NTHS5441T1G

Specifications

ON Semiconductor NTHS5441T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTHS5441T1G.

Lifecycle Status
ACTIVE (Last Updated: 10 hours ago)
Factory Lead Time
2 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Number of Pins
8
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
8
ECCN Code
EAR99
Additional Feature
LOGIC LEVEL COMPATIBLE
Subcategory
Other Transistors
Voltage - Rated DC
-20V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
C BEND
Peak Reflow Temperature (Cel)
260
Current Rating
-3.9A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
8
Number of Elements
1
Power Dissipation-Max
1.3W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
1.3W
Turn On Delay Time
14 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
46m Ω @ 3.9A, 4.5V
Vgs(th) (Max) @ Id
1.2V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
710pF @ 5V
Current - Continuous Drain (Id) @ 25°C
3.9A Ta
Gate Charge (Qg) (Max) @ Vgs
22nC @ 4.5V
Rise Time
22ns
Drain to Source Voltage (Vdss)
20V
Drive Voltage (Max Rds On,Min Rds On)
2.5V 4.5V
Vgs (Max)
±12V
Fall Time (Typ)
22 ns
Turn-Off Delay Time
42 ns
Continuous Drain Current (ID)
5.3A
Gate to Source Voltage (Vgs)
12V
Drain-source On Resistance-Max
0.06Ohm
Drain to Source Breakdown Voltage
-20V
Nominal Vgs
-1.2 V
Height
1.1mm
Length
3.1mm
Width
1.7mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTHS5441T1G Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 710pF @ 5V.This device has a continuous drain current (ID) of [5.3A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=-20V, the drain-source breakdown voltage is -20V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 42 ns.During turn-on, the input capacitance of the device is charged before drain current conduction starts, so its delay time is 14 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 12V volts.In order to operate this transistor, a voltage of 20V is needed from the drain to the source (Vdss).Its overall power consumption can be reduced by using drive voltage (2.5V 4.5V).

NTHS5441T1G Features
a continuous drain current (ID) of 5.3A
a drain-to-source breakdown voltage of -20V voltage
the turn-off delay time is 42 ns
a 20V drain to source voltage (Vdss)

NTHS5441T1G Applications
There are a lot of ON Semiconductor
NTHS5441T1G applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

NTHS5441T1G More Descriptions

Power MOSFET -20V -5.3A 60 mOhm Single P-Channel ChipFET
NTHS5441T1G P-channel MOSFET Transistor, 2.8 A, 20 V, 8-Pin ChipFET | ON Semiconductor NTHS5441T1G
P Channel Mosfet, -20V, 5.3A, 1206A; Channel Type:P Channel; Drain Source Voltage Vds:20V; Continuous Drain Current Id:5.3A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:4.5V; Gate Source Threshold Voltage Max:1.2V Rohs Compliant: Yes |Onsemi NTHS5441T1G

Product Comparison

The three parts on the right have similar specifications to NTHS5441T1G.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Surface Mount

Terminal Finish

Reach Compliance Code

JESD-30 Code

Qualification Status

Configuration

Drain Current-Max (Abs) (ID)

DS Breakdown Voltage-Min

View Compare
NTHS5441T1G

ON Semiconductor

ACTIVE (Last Updated: 10 hours ago)

2 Weeks

Tin

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

4.535924g

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

8

EAR99

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

C BEND

260

-3.9A

40

8

1

1.3W Ta

Single

ENHANCEMENT MODE

1.3W

14 ns

P-Channel

SWITCHING

46m Ω @ 3.9A, 4.5V

1.2V @ 250μA

710pF @ 5V

3.9A Ta

22nC @ 4.5V

22ns

20V

2.5V 4.5V

±12V

22 ns

42 ns

5.3A

12V

0.06Ohm

-20V

-1.2 V

1.1mm

3.1mm

1.7mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
NTHS4501NT1

ON Semiconductor

-

-

-

-

Surface Mount

8-SMD, Flat Lead

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e0

yes

Obsolete

1 (Unlimited)

8

-

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

DUAL

C BEND

240

-

30

8

1

1.3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

38m Ω @ 4.9A, 10V

2V @ 250μA

462pF @ 24V

4.9A Ta

9.1nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

0.038Ohm

-

-

-

-

-

-

-

Non-RoHS Compliant

-

YES

TIN LEAD

unknown

R-XDSO-C8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

4.9A

30V

NTHS5441T1G vs NTHS4501NT1
NTHS4501NT1G

ON Semiconductor

-

-

-

-

Surface Mount

8-SMD, Flat Lead

-

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

-

e3

no

Obsolete

1 (Unlimited)

8

-

LOGIC LEVEL COMPATIBLE

-

-

MOSFET (Metal Oxide)

DUAL

C BEND

260

-

40

8

1

1.3W Ta

-

ENHANCEMENT MODE

-

-

N-Channel

SWITCHING

38m Ω @ 4.9A, 10V

2V @ 250μA

462pF @ 24V

4.9A Ta

9.1nC @ 10V

-

30V

4.5V 10V

±20V

-

-

-

-

0.038Ohm

-

-

-

-

-

-

-

ROHS3 Compliant

-

YES

MATTE TIN

-

R-XDSO-C8

COMMERCIAL

SINGLE WITH BUILT-IN DIODE

4.9A

30V

NTHS5441T1G vs NTHS4501NT1G
NTHS5443T1G

ON Semiconductor

ACTIVE (Last Updated: 18 hours ago)

2 Weeks

-

Surface Mount

Surface Mount

8-SMD, Flat Lead

8

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

2005

e3

yes

Active

1 (Unlimited)

8

EAR99

LOGIC LEVEL COMPATIBLE

Other Transistors

-20V

MOSFET (Metal Oxide)

DUAL

C BEND

260

-3.6A

40

8

1

1.3W Ta

Single

ENHANCEMENT MODE

1.3W

8.5 ns

P-Channel

SWITCHING

65m Ω @ 3.6A, 4.5V

600mV @ 250μA

-

3.6A Ta

12nC @ 4.5V

14ns

20V

2.5V 4.5V

±12V

14 ns

38 ns

4.9A

12V

0.065Ohm

-20V

-

1.1mm

3.1mm

1.7mm

-

No

ROHS3 Compliant

Lead Free

-

Tin (Sn)

-

-

-

-

-

-

NTHS5441T1G vs NTHS5443T1G