ON Semiconductor NTF2955T1G

Name: NTF2955T1G
Brand: ON Semiconductor
SKU: 2848462-NTF2955T1G
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: NTF2955T1G

Manufacturer:: ON Semiconductor

Ventron No:: 2848462-NTF2955T1G

Description:: MOSFET P-CH 60V 1.7A SOT-223

ECAD Model:

Datasheet:: NTF2955T1G

Specifications

ON Semiconductor NTF2955T1G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTF2955T1G.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
8 Weeks
Mounting Type
Surface Mount
Package / Case
TO-261-4, TO-261AA
Surface Mount
YES
Number of Pins
4
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Cut Tape (CT)
Published
2006
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
4
ECCN Code
EAR99
Resistance
145MOhm
Terminal Finish
Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
260
Current Rating
-2.6A
Time@Peak Reflow Temperature-Max (s)
40
Pin Count
4
Number of Elements
1
Power Dissipation-Max
1W Ta
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.3W
Case Connection
DRAIN
Turn On Delay Time
11 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
185m Ω @ 2.4A, 10V
Vgs(th) (Max) @ Id
4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
492pF @ 25V
Current - Continuous Drain (Id) @ 25°C
1.7A Ta
Gate Charge (Qg) (Max) @ Vgs
14.3nC @ 10V
Rise Time
7.6ns
Drain to Source Voltage (Vdss)
60V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
38 ns
Turn-Off Delay Time
65 ns
Continuous Drain Current (ID)
2.6A
Threshold Voltage
-4V
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Avalanche Energy Rating (Eas)
225 mJ
Height
1.57mm
Length
6.5mm
Width
3.5mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

NTF2955T1G Description This N-Channel MOSFET is produced using Fairchild Semiconductor's advance PowerTrench? process that has been especially tailored to minimize the on-state resistance while maintaining superior ruggedness and switching performance for industrial applications.

NTF2955T1G Features Design for low RDS(on) Withstands High Energy in Avalanche and Commutation Modes AEC?Q101 Qualified ? NVF2955 These Devices are Pb?Free and are RoHS Compliant

NTF2955T1G Applications Power Supplies PWM Motor Control Converters Power Management

NTF2955T1G More Descriptions

NTF2955T1G P-channel MOSFET Transistor; 2.6 A; 60 V; 3 Tab-Pin SOT-223
Power MOSFET, P Channel, 60 V, 2.6 A, 185 Milliohms, SOT-223, 4 Pins, Surface Mount
Trans MOSFET P-CH 60V 2.6A Automotive 4-Pin(3 Tab) SOT-223 T/R
Single P-Channel Power MOSFET -60V, -2.6A, 170mΩ
This is a -60 V P-Channel MOSFET in SOT-223 package. It is an extremely rugged device and has a large safe operating area.
Power Field-Effect Transistor, 1.7A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-261AA
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.6 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 145 / Gate-Source Voltage V = 20 / Fall Time ns = 38 / Rise Time ns = 7.6 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 11 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = SOT-223 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 2.3

Certification