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NTD25P03LT4G

ON Semiconductor NTD25P03LT4G

Part Number:
NTD25P03LT4G
Manufacturer:
ON Semiconductor
Ventron No:
2478338-NTD25P03LT4G
Description:
MOSFET P-CH 30V 25A DPAK
ECAD Model:
Datasheet:
NTD25P03LT4G

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Specifications
ON Semiconductor NTD25P03LT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD25P03LT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    51MOhm
  • Additional Feature
    LOGIC LEVEL COMPATIBLE
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -30V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -25A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    75W Tj
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    75W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    80m Ω @ 25A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1260pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    25A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    20nC @ 5V
  • Rise Time
    37ns
  • Drain to Source Voltage (Vdss)
    30V
  • Drive Voltage (Max Rds On,Min Rds On)
    4V 5V
  • Vgs (Max)
    ±15V
  • Fall Time (Typ)
    16 ns
  • Turn-Off Delay Time
    15 ns
  • Continuous Drain Current (ID)
    25A
  • Threshold Voltage
    -1.6V
  • Gate to Source Voltage (Vgs)
    15V
  • Drain to Source Breakdown Voltage
    -30V
  • Pulsed Drain Current-Max (IDM)
    75A
  • Avalanche Energy Rating (Eas)
    200 mJ
  • Nominal Vgs
    -1.6 V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD25P03LT4G Description
The NTD25P03LT4G is a -30V P-channel Power MOSFET designed for low voltage, high-speed switching applications and to withstand high energy in the avalanche and commutation modes. The source to drain diode recovery time is comparable to a discrete fast recovery diode.  The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor NTD25P03LT4G is in the TO-252-4 package with 75W power dissipation.

NTD25P03LT4G Features
AEC?Q101 Qualified and PPAP Capable
Pb?Free and RoHS Compliant
Drain?to?Source Voltage: -30v
Total Power Dissipation @ TA= 25°C: 75w
S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements

NTD25P03LT4G Applications
PWM Motor Controls
Power Supplies
Converters
Bridge Circuits
Motor Drive & Control
Power Management
NTD25P03LT4G More Descriptions
Single P-Channel Logic Level Power MOSFET -30V, -25A, 72mΩ
P-Channel 30 V 51 mOhm 75 W Tab Mount Power MOSFET - TO-252-3
NTD25P03LT4G P-channel MOSFET Transistor, 25 A, 30 V, 3-Pin DPAK | ON Semiconductor NTD25P03LT4G
P CHANNEL MOSFET, -30V, 25A, D-PAK, FULL REEL; Transistor Polarity:P Channel; Continuous Drain Current Id:25A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.056ohm; Rds(on) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.6V RoHS Compliant: Yes
MOSFET, P CH, 30V, 25A, D-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -25A; Drain Source Voltage Vds: -30V; On Resistance Rds(on): 0.056ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.6V; Power Dissipation Pd: 75W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 150°C
Product Comparison
The three parts on the right have similar specifications to NTD25P03LT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Reach Compliance Code
    Qualification Status
    Drain-source On Resistance-Max
    View Compare
  • NTD25P03LT4G
    NTD25P03LT4G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    51MOhm
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -25A
    40
    3
    R-PSSO-G2
    1
    75W Tj
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    9 ns
    P-Channel
    SWITCHING
    80m Ω @ 25A, 5V
    2V @ 250μA
    1260pF @ 25V
    25A Ta
    20nC @ 5V
    37ns
    30V
    4V 5V
    ±15V
    16 ns
    15 ns
    25A
    -1.6V
    15V
    -30V
    75A
    200 mJ
    -1.6 V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
  • NTD24N06-001
    NTD24N06-001
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    -
    24A
    -
    -
    -
    -
    1.36W Ta 62.5W Tj
    Single
    -
    62.5W
    -
    -
    N-Channel
    -
    42m Ω @ 10A, 10V
    4V @ 250μA
    1200pF @ 25V
    24A Ta
    48nC @ 10V
    24ns
    -
    10V
    ±20V
    27 ns
    25 ns
    24A
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    -
    -
    -
    -
    NTD25P03LT4G vs NTD24N06-001
  • NTD25P03L1
    NTD25P03L1
    ON Semiconductor
    OBSOLETE (Last Updated: 1 day ago)
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    SILICON
    -55°C~150°C TJ
    Tube
    2006
    e0
    no
    Obsolete
    1 (Unlimited)
    3
    -
    -
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -30V
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -25A
    NOT SPECIFIED
    4
    R-PSIP-T3
    1
    75W Tj
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    -
    P-Channel
    SWITCHING
    80m Ω @ 25A, 5V
    2V @ 250μA
    1260pF @ 25V
    25A Ta
    20nC @ 5V
    37ns
    30V
    4V 5V
    ±15V
    16 ns
    15 ns
    25A
    -
    15V
    -30V
    75A
    200 mJ
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    -
    Tin/Lead (Sn80Pb20)
    not_compliant
    Not Qualified
    0.08Ohm
    NTD25P03LT4G vs NTD25P03L1
  • NTD25P03LRLG
    NTD25P03LRLG
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 1 week ago)
    -
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    e3
    yes
    Obsolete
    1 (Unlimited)
    2
    -
    -
    LOGIC LEVEL COMPATIBLE
    Other Transistors
    -
    MOSFET (Metal Oxide)
    GULL WING
    260
    -
    40
    3
    R-PSSO-G2
    1
    75W Tj
    Single
    ENHANCEMENT MODE
    75W
    DRAIN
    -
    P-Channel
    SWITCHING
    80m Ω @ 25A, 5V
    2V @ 250μA
    1260pF @ 25V
    25A Ta
    20nC @ 5V
    37ns
    30V
    4V 5V
    ±15V
    16 ns
    15 ns
    25A
    -
    15V
    -30V
    75A
    200 mJ
    -
    -
    -
    -
    -
    -
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    -
    Not Qualified
    0.08Ohm
    NTD25P03LT4G vs NTD25P03LRLG
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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