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NTD20P06LT4G

ON Semiconductor NTD20P06LT4G

Part Number:
NTD20P06LT4G
Manufacturer:
ON Semiconductor
Ventron No:
2478640-NTD20P06LT4G
Description:
MOSFET P-CH 60V 15.5A DPAK
ECAD Model:
Datasheet:
NTD20P06LT4G

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Specifications
ON Semiconductor NTD20P06LT4G technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20P06LT4G.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Surface Mount
    YES
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Cut Tape (CT)
  • Published
    2005
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Resistance
    130mOhm
  • Subcategory
    Other Transistors
  • Voltage - Rated DC
    -60V
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    260
  • Current Rating
    -15A
  • Time@Peak Reflow Temperature-Max (s)
    40
  • Pin Count
    3
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Power Dissipation-Max
    65W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    65W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    150m Ω @ 7.5A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1190pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    15.5A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    26nC @ 5V
  • Rise Time
    90ns
  • Drain to Source Voltage (Vdss)
    60V
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    70 ns
  • Turn-Off Delay Time
    28 ns
  • Continuous Drain Current (ID)
    15.5A
  • Threshold Voltage
    -1.5V
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    -60V
  • Pulsed Drain Current-Max (IDM)
    50A
  • Nominal Vgs
    -1.5 V
  • Height
    2.38mm
  • Length
    6.73mm
  • Width
    6.22mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
NTD20P06LT4G Description
NTD20P06LT4G is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a drain to source voltage of 60V. The operating temperature of the NTD20P06LT4G is -55°C~175°C TJ and its maximum power dissipation is 65W Tc. NTD20P06LT4G has 3 pins and it is available in Cut Tape (CT) packaging way.

NTD20P06LT4G Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified ? NTDV20P06L
These Devices are Pb?Free and are RoHS Compliant

NTD20P06LT4G Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DC?DC Conversion
NTD20P06LT4G More Descriptions
NTD20P06LT4G P-channel MOSFET Transistor; 15.5 A; 60 V; 3-Pin DPAK
Trans MOSFET P-CH 60V 15.5A 3-Pin(2 Tab) DPAK T/R / MOSFET P-CH 60V 15.5A DPAK
P-Channel 60 V 130 mOhm 65 W Tab Mount Power MOSFET - TO-252-3
Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ
Transistor Polarity:p Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:15.5A; On Resistance Rds(On):0.143Ohm; Transistor Mounting:surface Mount; Rds(On) Test Voltage Vgs:5V; Threshold Voltage Vgs:1.5V Rohs Compliant: Yes
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -15.5 / Drain-Source Voltage (Vds) V = -60 / ON Resistance (Rds(on)) mOhm = 150 / Gate-Source Voltage V = 20 / Fall Time ns = 135 / Rise Time ns = 180 / Turn-OFF Delay Time ns = 50 / Turn-ON Delay Time ns = 20 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 175 / Package Type = TO-252 / Pins = 4 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) W = 65
Product Comparison
The three parts on the right have similar specifications to NTD20P06LT4G.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mounting Type
    Package / Case
    Surface Mount
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Voltage - Rated DC
    Technology
    Terminal Form
    Peak Reflow Temperature (Cel)
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Mount
    Terminal Finish
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    View Compare
  • NTD20P06LT4G
    NTD20P06LT4G
    ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    8 Weeks
    Tin
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    YES
    3
    SILICON
    -55°C~175°C TJ
    Cut Tape (CT)
    2005
    e3
    yes
    Active
    1 (Unlimited)
    2
    EAR99
    130mOhm
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    GULL WING
    260
    -15A
    40
    3
    R-PSSO-G2
    1
    65W Tc
    Single
    ENHANCEMENT MODE
    65W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    150m Ω @ 7.5A, 5V
    2V @ 250μA
    1190pF @ 25V
    15.5A Ta
    26nC @ 5V
    90ns
    60V
    5V
    ±20V
    70 ns
    28 ns
    15.5A
    -1.5V
    20V
    -60V
    50A
    -1.5 V
    2.38mm
    6.73mm
    6.22mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
  • NTD24N06-001
    NTD24N06-001
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~175°C TJ
    Tube
    2009
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    60V
    MOSFET (Metal Oxide)
    -
    -
    24A
    -
    -
    -
    -
    1.36W Ta 62.5W Tj
    Single
    -
    62.5W
    -
    -
    N-Channel
    -
    42m Ω @ 10A, 10V
    4V @ 250μA
    1200pF @ 25V
    24A Ta
    48nC @ 10V
    24ns
    -
    10V
    ±20V
    27 ns
    25 ns
    24A
    -
    20V
    60V
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    -
    -
    -
    NTD20P06LT4G vs NTD24N06-001
  • NTD20P06L-1G
    NTD20P06L-1G
    ON Semiconductor
    LAST SHIPMENTS (Last Updated: 3 days ago)
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    NO
    4
    SILICON
    -55°C~175°C TJ
    Tube
    2005
    e3
    yes
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Other Transistors
    -60V
    MOSFET (Metal Oxide)
    -
    -
    -15.5A
    -
    4
    R-PSIP-T3
    1
    65W Tc
    Single
    ENHANCEMENT MODE
    65W
    DRAIN
    11 ns
    P-Channel
    SWITCHING
    150m Ω @ 7.5A, 5V
    2V @ 250μA
    1190pF @ 25V
    15.5A Ta
    26nC @ 5V
    90ns
    60V
    5V
    ±20V
    70 ns
    28 ns
    15.5A
    -
    20V
    -60V
    50A
    -
    -
    -
    -
    -
    No
    RoHS Compliant
    Lead Free
    -
    Tin (Sn)
    15A
    0.15Ohm
    NTD20P06LT4G vs NTD20P06L-1G
  • NTD20N03L27-001
    NTD20N03L27-001
    ON Semiconductor
    -
    -
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -
    -
    -
    -55°C~150°C TJ
    Tube
    2003
    -
    -
    Obsolete
    1 (Unlimited)
    -
    -
    -
    -
    30V
    MOSFET (Metal Oxide)
    -
    -
    20A
    -
    -
    -
    -
    1.75W Ta 74W Tc
    Single
    -
    74W
    -
    -
    N-Channel
    -
    27m Ω @ 10A, 5V
    2V @ 250μA
    1260pF @ 25V
    20A Ta
    18.9nC @ 10V
    137ns
    -
    4V 5V
    ±20V
    31 ns
    38 ns
    20A
    -
    20V
    30V
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    Contains Lead
    Through Hole
    -
    -
    -
    NTD20P06LT4G vs NTD20N03L27-001
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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