ON Semiconductor NTD20P06LG
- Part Number:
- NTD20P06LG
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2489408-NTD20P06LG
- Description:
- MOSFET P-CH 60V 15.5A DPAK
- Datasheet:
- NTD(V)20P06L
ON Semiconductor NTD20P06LG technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20P06LG.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Surface MountYES
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Published2005
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations2
- ECCN CodeEAR99
- Resistance130MOhm
- Terminal FinishTin (Sn)
- SubcategoryOther Transistors
- Voltage - Rated DC-60V
- TechnologyMOSFET (Metal Oxide)
- Terminal FormGULL WING
- Peak Reflow Temperature (Cel)260
- Current Rating-15.5A
- Time@Peak Reflow Temperature-Max (s)40
- Pin Count3
- JESD-30 CodeR-PSSO-G2
- Number of Elements1
- Power Dissipation-Max65W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation65W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs150m Ω @ 7.5A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1190pF @ 25V
- Current - Continuous Drain (Id) @ 25°C15.5A Ta
- Gate Charge (Qg) (Max) @ Vgs26nC @ 5V
- Rise Time90ns
- Drain to Source Voltage (Vdss)60V
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±20V
- Fall Time (Typ)70 ns
- Turn-Off Delay Time28 ns
- Continuous Drain Current (ID)15.5A
- Threshold Voltage-1.5V
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage-60V
- Pulsed Drain Current-Max (IDM)50A
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
- Lead FreeLead Free
NTD20P06LG Description
NTD20P06LG is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD20P06LG is -55°C~175°C TJ and its maximum power dissipation is 65W. NTD20P06LG has 3 pins and it is available in Tube packaging way. The Turn On Delay Time of the NTD20P06LG is 11 ns and its Turn-Off Delay Time is 28 ns.
NTD20P06LG Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified ? NTDV20P06L
These Devices are Pb?Free and are RoHS Compliant
NTD20P06LG Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DC?DC Conversion
NTD20P06LG is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 60V. The operating temperature of the NTD20P06LG is -55°C~175°C TJ and its maximum power dissipation is 65W. NTD20P06LG has 3 pins and it is available in Tube packaging way. The Turn On Delay Time of the NTD20P06LG is 11 ns and its Turn-Off Delay Time is 28 ns.
NTD20P06LG Features
Withstands High Energy in Avalanche and Commutation Modes
Low Gate Charge for Fast Switching
AEC Q101 Qualified ? NTDV20P06L
These Devices are Pb?Free and are RoHS Compliant
NTD20P06LG Applications
Bridge Circuits
Power Supplies, Power Motor Controls
DC?DC Conversion
NTD20P06LG More Descriptions
Single P-Channel Power MOSFET -60V, -15.5A, 150mΩ
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:15.5A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-1.5V ;RoHS Compliant: Yes
MOSFET, P CH, 60V, 15.5A, D-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -15.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.143ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 65W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C
Transistor; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:-60V; Continuous Drain Current, Id:15.5A; On Resistance, Rds(on):150mohm; Rds(on) Test Voltage, Vgs:-5V; Threshold Voltage, Vgs Typ:-1.5V ;RoHS Compliant: Yes
MOSFET, P CH, 60V, 15.5A, D-PAK; Transistor Polarity: P Channel; Continuous Drain Current Id: -15.5A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.143ohm; Rds(on) Test Voltage Vgs: -5V; Threshold Voltage Vgs: -1.5V; Power Dissipation Pd: 65W; Transistor Case Style: TO-252; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C
The three parts on the right have similar specifications to NTD20P06LG.
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ImagePart NumberManufacturerLifecycle StatusMounting TypePackage / CaseSurface MountNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryVoltage - Rated DCTechnologyTerminal FormPeak Reflow Temperature (Cel)Current RatingTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCRadiation HardeningRoHS StatusLead FreeAdditional FeatureTerminal PositionReach Compliance CodeQualification StatusConfigurationDrain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDS Breakdown Voltage-MinAvalanche Energy Rating (Eas)MountView Compare
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NTD20P06LGLAST SHIPMENTS (Last Updated: 1 week ago)Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES3SILICON-55°C~175°C TJTube2005e3yesObsolete1 (Unlimited)2EAR99130MOhmTin (Sn)Other Transistors-60VMOSFET (Metal Oxide)GULL WING260-15.5A403R-PSSO-G2165W TcSingleENHANCEMENT MODE65WDRAIN11 nsP-ChannelSWITCHING150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V90ns60V5V±20V70 ns28 ns15.5A-1.5V20V-60V50ANo SVHCNoRoHS CompliantLead Free-----------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63YES-SILICON-55°C~150°C TJTape & Reel (TR)-e0noObsolete1 (Unlimited)2--TIN LEAD--MOSFET (Metal Oxide)GULL WING240-303R-PSSO-G2175W Tj-ENHANCEMENT MODE-DRAIN-P-ChannelSWITCHING80m Ω @ 25A, 5V2V @ 250μA1.26pF @ 25V25A Ta20nC @ 5V-30V4V 5V±15V------75A--Non-RoHS Compliant-LOGIC LEVEL COMPATIBLESINGLEunknownCOMMERCIALSINGLE WITH BUILT-IN DIODE25A0.08Ohm30V200 mJ-
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LAST SHIPMENTS (Last Updated: 3 days ago)Through HoleTO-251-3 Short Leads, IPak, TO-251AANO4SILICON-55°C~175°C TJTube2005e3yesObsolete1 (Unlimited)3EAR99-Tin (Sn)Other Transistors-60VMOSFET (Metal Oxide)---15.5A-4R-PSIP-T3165W TcSingleENHANCEMENT MODE65WDRAIN11 nsP-ChannelSWITCHING150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V90ns60V5V±20V70 ns28 ns15.5A-20V-60V50A-NoRoHS CompliantLead Free-----15A0.15Ohm---
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-Through HoleTO-251-3 Short Leads, IPak, TO-251AA----55°C~150°C TJTube2003--Obsolete1 (Unlimited)-----30VMOSFET (Metal Oxide)--20A----1.75W Ta 74W TcSingle-74W--N-Channel-27m Ω @ 10A, 5V2V @ 250μA1260pF @ 25V20A Ta18.9nC @ 10V137ns-4V 5V±20V31 ns38 ns20A-20V30V---Non-RoHS CompliantContains Lead---------Through Hole
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