NTD20N06LT4

ON Semiconductor NTD20N06LT4

Part Number:
NTD20N06LT4
Manufacturer:
ON Semiconductor
Ventron No:
2851700-NTD20N06LT4
Description:
MOSFET N-CH 60V 20A DPAK
ECAD Model:
Datasheet:
NTD20N06LT4

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Specifications
ON Semiconductor NTD20N06LT4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06LT4.
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-252-3, DPak (2 Leads Tab), SC-63
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Published
    2005
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Voltage - Rated DC
    60V
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    not_compliant
  • Current Rating
    20A
  • Pin Count
    3
  • Power Dissipation-Max
    1.36W Ta 60W Tj
  • Element Configuration
    Single
  • Power Dissipation
    60W
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    48m Ω @ 10A, 5V
  • Vgs(th) (Max) @ Id
    2V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    990pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    20A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    32nC @ 5V
  • Rise Time
    98ns
  • Drive Voltage (Max Rds On,Min Rds On)
    5V
  • Vgs (Max)
    ±15V
  • Fall Time (Typ)
    62 ns
  • Turn-Off Delay Time
    25 ns
  • Continuous Drain Current (ID)
    20A
  • Gate to Source Voltage (Vgs)
    15V
  • Drain to Source Breakdown Voltage
    60V
  • RoHS Status
    Non-RoHS Compliant
  • Lead Free
    Contains Lead
Description
NTD20N06LT4 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.Its overall power consumption can be reduced by using drive voltage (5V).

NTD20N06LT4 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns


NTD20N06LT4 Applications
There are a lot of ON Semiconductor
NTD20N06LT4 applications of single MOSFETs transistors.


Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NTD20N06LT4 More Descriptions
MOSFETs- Power and Small Signal 60V 20A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 30.1K OHM 1% 1/4W 1206
Product Comparison
The three parts on the right have similar specifications to NTD20N06LT4.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Voltage - Rated DC
    Technology
    Reach Compliance Code
    Current Rating
    Pin Count
    Power Dissipation-Max
    Element Configuration
    Power Dissipation
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Surface Mount
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Operating Mode
    Case Connection
    Transistor Application
    Drain to Source Voltage (Vdss)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    Lifecycle Status
    Number of Pins
    Subcategory
    Turn On Delay Time
    Radiation Hardening
    View Compare
  • NTD20N06LT4
    NTD20N06LT4
    Surface Mount
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~175°C TJ
    Tape & Reel (TR)
    2005
    Obsolete
    1 (Unlimited)
    EAR99
    60V
    MOSFET (Metal Oxide)
    not_compliant
    20A
    3
    1.36W Ta 60W Tj
    Single
    60W
    N-Channel
    48m Ω @ 10A, 5V
    2V @ 250μA
    990pF @ 25V
    20A Ta
    32nC @ 5V
    98ns
    5V
    ±15V
    62 ns
    25 ns
    20A
    15V
    60V
    Non-RoHS Compliant
    Contains Lead
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • NTD25P03LT4
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tape & Reel (TR)
    -
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    unknown
    -
    3
    75W Tj
    -
    -
    P-Channel
    80m Ω @ 25A, 5V
    2V @ 250μA
    1.26pF @ 25V
    25A Ta
    20nC @ 5V
    -
    4V 5V
    ±15V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    SILICON
    e0
    no
    2
    TIN LEAD
    LOGIC LEVEL COMPATIBLE
    SINGLE
    GULL WING
    240
    30
    R-PSSO-G2
    COMMERCIAL
    1
    SINGLE WITH BUILT-IN DIODE
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    30V
    25A
    0.08Ohm
    75A
    30V
    200 mJ
    -
    -
    -
    -
    -
  • NTD20P06L-1G
    -
    Through Hole
    TO-251-3 Short Leads, IPak, TO-251AA
    -55°C~175°C TJ
    Tube
    2005
    Obsolete
    1 (Unlimited)
    EAR99
    -60V
    MOSFET (Metal Oxide)
    -
    -15.5A
    4
    65W Tc
    Single
    65W
    P-Channel
    150m Ω @ 7.5A, 5V
    2V @ 250μA
    1190pF @ 25V
    15.5A Ta
    26nC @ 5V
    90ns
    5V
    ±20V
    70 ns
    28 ns
    15.5A
    20V
    -60V
    RoHS Compliant
    Lead Free
    NO
    SILICON
    e3
    yes
    3
    Tin (Sn)
    -
    -
    -
    -
    -
    R-PSIP-T3
    -
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    60V
    15A
    0.15Ohm
    50A
    -
    -
    LAST SHIPMENTS (Last Updated: 3 days ago)
    4
    Other Transistors
    11 ns
    No
  • NTD25P03LRLG
    -
    Surface Mount
    TO-252-3, DPak (2 Leads Tab), SC-63
    -55°C~150°C TJ
    Tape & Reel (TR)
    2006
    Obsolete
    1 (Unlimited)
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    3
    75W Tj
    Single
    75W
    P-Channel
    80m Ω @ 25A, 5V
    2V @ 250μA
    1260pF @ 25V
    25A Ta
    20nC @ 5V
    37ns
    4V 5V
    ±15V
    16 ns
    15 ns
    25A
    15V
    -30V
    RoHS Compliant
    Lead Free
    YES
    SILICON
    e3
    yes
    2
    Tin (Sn)
    LOGIC LEVEL COMPATIBLE
    -
    GULL WING
    260
    40
    R-PSSO-G2
    Not Qualified
    1
    -
    ENHANCEMENT MODE
    DRAIN
    SWITCHING
    30V
    -
    0.08Ohm
    75A
    -
    200 mJ
    LAST SHIPMENTS (Last Updated: 1 week ago)
    3
    Other Transistors
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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