ON Semiconductor NTD20N06LT4
- Part Number:
- NTD20N06LT4
- Manufacturer:
- ON Semiconductor
- Ventron No:
- 2851700-NTD20N06LT4
- Description:
- MOSFET N-CH 60V 20A DPAK
- Datasheet:
- NTD20N06LT4
ON Semiconductor NTD20N06LT4 technical specifications, attributes, parameters and parts with similar specifications to ON Semiconductor NTD20N06LT4.
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / CaseTO-252-3, DPak (2 Leads Tab), SC-63
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- Published2005
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Voltage - Rated DC60V
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codenot_compliant
- Current Rating20A
- Pin Count3
- Power Dissipation-Max1.36W Ta 60W Tj
- Element ConfigurationSingle
- Power Dissipation60W
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs48m Ω @ 10A, 5V
- Vgs(th) (Max) @ Id2V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds990pF @ 25V
- Current - Continuous Drain (Id) @ 25°C20A Ta
- Gate Charge (Qg) (Max) @ Vgs32nC @ 5V
- Rise Time98ns
- Drive Voltage (Max Rds On,Min Rds On)5V
- Vgs (Max)±15V
- Fall Time (Typ)62 ns
- Turn-Off Delay Time25 ns
- Continuous Drain Current (ID)20A
- Gate to Source Voltage (Vgs)15V
- Drain to Source Breakdown Voltage60V
- RoHS StatusNon-RoHS Compliant
- Lead FreeContains Lead
NTD20N06LT4 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.Its overall power consumption can be reduced by using drive voltage (5V).
NTD20N06LT4 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
NTD20N06LT4 Applications
There are a lot of ON Semiconductor
NTD20N06LT4 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 990pF @ 25V.This device has a continuous drain current (ID) of [20A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=60V, the drain-source breakdown voltage is 60V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 25 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 15V volts.Its overall power consumption can be reduced by using drive voltage (5V).
NTD20N06LT4 Features
a continuous drain current (ID) of 20A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 25 ns
NTD20N06LT4 Applications
There are a lot of ON Semiconductor
NTD20N06LT4 applications of single MOSFETs transistors.
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
NTD20N06LT4 More Descriptions
MOSFETs- Power and Small Signal 60V 20A N-Channel No-Cancel/No-Return
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 30.1K OHM 1% 1/4W 1206
Power Field-Effect Transistor, 20A I(D), 60V, 0.048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
RES SMD 30.1K OHM 1% 1/4W 1206
The three parts on the right have similar specifications to NTD20N06LT4.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPublishedPart StatusMoisture Sensitivity Level (MSL)ECCN CodeVoltage - Rated DCTechnologyReach Compliance CodeCurrent RatingPin CountPower Dissipation-MaxElement ConfigurationPower DissipationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeSurface MountTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishAdditional FeatureTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeQualification StatusNumber of ElementsConfigurationOperating ModeCase ConnectionTransistor ApplicationDrain to Source Voltage (Vdss)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)Lifecycle StatusNumber of PinsSubcategoryTurn On Delay TimeRadiation HardeningView Compare
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NTD20N06LT4Surface MountSurface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~175°C TJTape & Reel (TR)2005Obsolete1 (Unlimited)EAR9960VMOSFET (Metal Oxide)not_compliant20A31.36W Ta 60W TjSingle60WN-Channel48m Ω @ 10A, 5V2V @ 250μA990pF @ 25V20A Ta32nC @ 5V98ns5V±15V62 ns25 ns20A15V60VNon-RoHS CompliantContains Lead------------------------------
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)--MOSFET (Metal Oxide)unknown-375W Tj--P-Channel80m Ω @ 25A, 5V2V @ 250μA1.26pF @ 25V25A Ta20nC @ 5V-4V 5V±15V-----Non-RoHS Compliant-YESSILICONe0no2TIN LEADLOGIC LEVEL COMPATIBLESINGLEGULL WING24030R-PSSO-G2COMMERCIAL1SINGLE WITH BUILT-IN DIODEENHANCEMENT MODEDRAINSWITCHING30V25A0.08Ohm75A30V200 mJ-----
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-Through HoleTO-251-3 Short Leads, IPak, TO-251AA-55°C~175°C TJTube2005Obsolete1 (Unlimited)EAR99-60VMOSFET (Metal Oxide)--15.5A465W TcSingle65WP-Channel150m Ω @ 7.5A, 5V2V @ 250μA1190pF @ 25V15.5A Ta26nC @ 5V90ns5V±20V70 ns28 ns15.5A20V-60VRoHS CompliantLead FreeNOSILICONe3yes3Tin (Sn)-----R-PSIP-T3-1-ENHANCEMENT MODEDRAINSWITCHING60V15A0.15Ohm50A--LAST SHIPMENTS (Last Updated: 3 days ago)4Other Transistors11 nsNo
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-Surface MountTO-252-3, DPak (2 Leads Tab), SC-63-55°C~150°C TJTape & Reel (TR)2006Obsolete1 (Unlimited)--MOSFET (Metal Oxide)--375W TjSingle75WP-Channel80m Ω @ 25A, 5V2V @ 250μA1260pF @ 25V25A Ta20nC @ 5V37ns4V 5V±15V16 ns15 ns25A15V-30VRoHS CompliantLead FreeYESSILICONe3yes2Tin (Sn)LOGIC LEVEL COMPATIBLE-GULL WING26040R-PSSO-G2Not Qualified1-ENHANCEMENT MODEDRAINSWITCHING30V-0.08Ohm75A-200 mJLAST SHIPMENTS (Last Updated: 1 week ago)3Other Transistors--
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